Theory of spin-orbit coupling in bilayer graphene

Theory of spin-orbit coupling in bilayer graphene is presented. The electronic band structure of the AB bilayer in the presence of spin-orbit coupling and a transverse electric field is calculated from first-principles using the linearized augmented plane wave method implemented in the WIEN2k code. The first-principles results around the K points are fitted to a tight-binding model. The main conclusion is that the spin-orbit effects in bilayer graphene derive essentially from the single-layer spin-orbit coupling which comes almost solely from the d orbitals. The intrinsic spin-orbit splitting (anticrossing) around the K points is about 24\mu eV for the low-energy valence and conduction bands, which are closest to the Fermi level, similarly as in the single layer graphene. An applied transverse electric field breaks space inversion symmetry and leads to an extrinsic (also called Bychkov-Rashba) spin-orbit splitting. This splitting is usually linearly proportional to the electric field. The peculiarity of graphene bilayer is that the low-energy bands remain split by 24\mu eV independently of the applied external field. The electric field, instead, opens a semiconducting band gap separating these low-energy bands. The remaining two high-energy bands are spin-split in proportion to the electric field; the proportionality coefficient is given by the second intrinsic spin-orbit coupling, whose value is 20\mu eV. All the band-structure effects and their spin splittings can be explained by our tight-binding model, in which the spin-orbit Hamiltonian is derived from symmetry considerations. The magnitudes of intra- and interlayer couplings---their values are similar to the single-layer graphene ones---are determined by fitting to first-principles results.Comment: 16 pages, 13 figures, 5 tables, typos corrected, published versio

Band-structure topologies of graphene: spin-orbit coupling effects from first principles

The electronic band structure of graphene in the presence of spin-orbit coupling and transverse electric field is investigated from first principles using the linearized augmented plane-wave method. The spin-orbit coupling opens a gap at the $K(K')$-point of the magnitude of 24 $\mu$eV (0.28 K). This intrinsic splitting comes 96% from the usually neglected $d$ and higher orbitals. The electric field induces an additional (extrinsic) Bychkov-Rashba-type splitting of 10 $\mu$eV (0.11 K) per V/nm, coming from the $\sigma$-$\pi$ mixing. A 'mini-ripple' configuration with every other atom is shifted out of the sheet by less than 1% differs little from the intrinsic case.Comment: 4 pages, 4 figure

Charge and spin density response functions of the clean two-dimensional electron gas with Rashba spin-orbit coupling at finite momenta and frequencies

We analytically evaluate charge and spin density response functions of the clean two-dimensional electron gas with Rashba spin-orbit coupling at finite momenta and frequencies. On the basis of our exact expressions we discuss the accuracy of the long-wavelength and the quasiclassical approximations. We also derive the static limit of spin susceptibilities and demonstrate, in particular, how the Kohn-like anomalies in their derivatives are related to the spin-orbit modification of the Ruderman-Kittel-Kasuya-Yosida interaction. Taking into account screening and exchange effects of the Coulomb interaction, we describe the collective charge and spin density excitation modes which appear to be coupled due to nonvanishing spin-charge response function.Comment: 15 pages, 9 figure

Electronic Spin Transport in Dual-Gated Bilayer Graphene

The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in a new device architecture which allows us to make a comparative study by separately investigating the roles of substrate and polymer residues on spin relaxation. First, the comparison between spin valves fabricated on SiO2 and BN substrates suggests that substrate-related charged impurities, phonons and roughness do not limit the spin transport in current devices. Next, the observation of a 5-fold enhancement in spin relaxation time in the encapsulated device highlights the significance of polymer residues on spin relaxation. We observe a spin relaxation length of ~ 10 um in the encapsulated bilayer with a charge mobility of 24000 cm2/Vs. The carrier density dependence of spin relaxation time has two distinct regimes; n<4 x 1012 cm-2, where spin relaxation time decreases monotonically as carrier concentration increases, and n>4 x 1012 cm-2, where spin relaxation time exhibits a sudden increase. The sudden increase in the spin relaxation time with no corresponding signature in the charge transport suggests the presence of a magnetic resonance close to the charge neutrality point. We also demonstrate, for the first time, spin transport across bipolar p-n junctions in our dual-gated device architecture that fully integrates a sequence of encapsulated regions in its design. At low temperatures, strong suppression of the spin signal was observed while a transport gap was induced, which is interpreted as a novel manifestation of impedance mismatch within the spin channel

Spin-orbit effects in a graphene bipolar pn junction

A graphene $pn$ junction is studied theoretically in the presence of both intrinsic and Rashba spin-orbit couplings. We show that a crossover from perfect reflection to perfect transmission is achieved at normal incidence by tuning the perpendicular electric field. By further studying angular dependent transmission, we demonstrate that perfect reflection at normal incidence can be clearly distinguished from trivial band gap effects. We also investigate how spin-orbit effects modify the conductance and the Fano factor associated with a potential step in both $nn$ and $np$ cases.Comment: 6 pages, 5 figures, conductance and Fano factor plots adde

Electronic properties of graphene and graphene nanoribbons with "pseudo-Rashba" spin-orbit coupling

We discuss the electronic properties of graphene and graphene nanoribbons including "pseudo-Rashba" spin-orbit coupling. After summarizing the bulk properties, we first analyze the scattering behavior close to an infinite mass and zigzag boundary. For low energies, we observe strong deviations from the usual spin-conserving behavior at high energies such as reflection acting as spin polarizer or switch. This results in a spin polarization along the direction of the boundary due to the appearance of evanescent modes in the case of non-equilibrium or when there is no coherence between the two one-particle branches. We then discuss the spin and density distribution of graphene nanoribbons.Comment: 18 pages, 9 figures; section on nanoribbons adde

Magnetic quantum ratchet effect in graphene

A periodically driven system with spatial asymmetry can exhibit a directed motion facilitated by thermal or quantum fluctuations. This so-called ratchet effect has fascinating ramifications in engineering and natural sciences. Graphene is nominally a symmetric system. Driven by a periodic electric field, no directed electric current should flow. However, if the graphene has lost its spatial symmetry due to its substrate or adatoms, an electronic ratchet motion can arise. We report an experimental demonstration of such an electronic ratchet in graphene layers, proving the underlying spatial asymmetry. The orbital asymmetry of the Dirac fermions is induced by an in-plane magnetic field, whereas the periodic driving comes from terahertz radiation. The resulting magnetic quantum ratchet transforms the a.c. power into a d.c. current, extracting work from the out-of-equilibrium electrons driven by undirected periodic forces. The observation of ratchet transport in this purest possible two-dimensional system indicates that the orbital effects may appear and be substantial in other two-dimensional crystals such as boron nitride, molybdenum dichalcogenides and related heterostructures. The measurable orbital effects in the presence of an in-plane magnetic field provide strong evidence for the existence of structure inversion asymmetry in graphene