259 research outputs found
Pressure dependence of phase transitions in the quasi one-dimensional metal-insulator transition system beta-Na1/3V2O5
The pressure dependence of phase transitions in the quasi one-dimensional
vanadium oxide -NaVO has been studied by magnetic
susceptibility and electrical resistivity measurements. The pressure dependence
of the various transition temperatures is quite differently. The transition at
T=240 K, previously reported and attributed to ordering on Na sites, and a
second transition at K, reported here for the first time and
attributed to a further increase of order on Na sites, are almost independent
of pressure. On the other hand, the metal-insulator (MI) transition at
K shifts to lower temperatures, while the magnetic transition at
K shifts to higher temperatures with increasing pressure. We discuss
the different pressure dependencies of and in terms of
increasing interchain coupling and the MI transition to be of Peierls type.Comment: 5 pages, 5 figure
Growth of Oxide Compounds under Dynamic Atmosphere Composition
Commercially available gases contain residual impurities leading to a
background oxygen partial pressure of typically several 10^{-6} bar,
independent of temperature. This oxygen partial pressure is inappropriate for
the growth of some single crystals where the desired oxidation state possesses
a narrow stability field. Equilibrium thermodynamic calculations allow the
determination of dynamic atmosphere compositions yielding such self adjusting
and temperature dependent oxygen partial pressures, that crystals like ZnO,
Ga2O3, or Fe{1-x}O can be grown from the melt.Comment: 4 pages, 3 figures, talk on CGCT-4 Sendai, May 21-24, 200
On the Crystallization of Terbium Aluminium Garnet
Attempts to grow terbium aluminium garnet (Tb3Al5O12, TAG) by the Czochralski
method lead to crystals of millimeter scale. Larger crystals could not be
obtained. DTA measurements within the binary system showed that TAG melts
incongruently at 1840 deg. C. The perovskite (TbAlO3, TAP) with a congruent
melting point of 1930 deg. C is the most stable phase in this system. The
region for primary crystallization of TAP covers the chemical composition of
TAG and suppresses the primary crystallization of the terbium aluminium garnet.Comment: 6 pages, 2 figure
New magnetic phase in metallic V_{2-y}O_3 close to the metal insulator transition
We have observed two spin density wave (SDW) phases in hole doped metallic
V_{2-y}O_3, one evolves from the other as a function of doping, pressure or
temperature. They differ in their response to an external magnetic field, which
can also induce a transition between them. The phase boundary between these two
states in the temperature-, doping-, and pressure-dependent phase diagram has
been determined by magnetization and magnetotransport measurements. One phase
exists at high doping level and has already been described in the literature.
The second phase is found in a small parameter range close to the boundary to
the antiferromagnetic insulating phase (AFI). The quantum phase transitions
between these states as a function of pressure and doping and the respective
metamagnetic behavior observed in these phases are discussed in the light of
structurally induced changes of the band structure.Comment: REVTeX, 8 pages, 12 EPS figures, submitted to PR
Resolving structural variability in network models and the brain
Large-scale white matter pathways crisscrossing the cortex create a complex
pattern of connectivity that underlies human cognitive function. Generative
mechanisms for this architecture have been difficult to identify in part
because little is known about mechanistic drivers of structured networks. Here
we contrast network properties derived from diffusion spectrum imaging data of
the human brain with 13 synthetic network models chosen to probe the roles of
physical network embedding and temporal network growth. We characterize both
the empirical and synthetic networks using familiar diagnostics presented in
statistical form, as scatter plots and distributions, to reveal the full range
of variability of each measure across scales in the network. We focus on the
degree distribution, degree assortativity, hierarchy, topological Rentian
scaling, and topological fractal scaling---in addition to several summary
statistics, including the mean clustering coefficient, shortest path length,
and network diameter. The models are investigated in a progressive, branching
sequence, aimed at capturing different elements thought to be important in the
brain, and range from simple random and regular networks, to models that
incorporate specific growth rules and constraints. We find that synthetic
models that constrain the network nodes to be embedded in anatomical brain
regions tend to produce distributions that are similar to those extracted from
the brain. We also find that network models hardcoded to display one network
property do not in general also display a second, suggesting that multiple
neurobiological mechanisms might be at play in the development of human brain
network architecture. Together, the network models that we develop and employ
provide a potentially useful starting point for the statistical inference of
brain network structure from neuroimaging data.Comment: 24 pages, 11 figures, 1 table, supplementary material
Importance of the V 3d-O 2p hybridization in the Mott-Hubbard material V2O3
We studied the changes in the electronic structure of V2O3 using a cluster
model. The calculations included fluctuations from the coherent band in the
metallic phase, and non-local Mott-Hubbard fluctuations in the insulating
phase. The incoherent structure is mostly related to the usual ligand screening
channel (3d2L). The coherent peak in the metallic phase corresponds to coherent
band fluctuations (3d2C). The non-local screened state in the insulating phase
(3d2D) appears at higher energies, opening the band gap. The photon energy
dependence of the spectra is mostly due to the relative V 3d and O 2p cross
sections. The present model reproduces also the observed changes in the V 1s
core-level spectra. The above results suggest that the Mott-Hubbard transition
in V2O3 requires a multi-band model.Comment: 4 pages, 4 figure
Transport, magnetic, thermodynamic and optical properties in Ti-doped Sr_2RuO_4
We report on electrical resistivity, magnetic susceptibility and
magnetization, on heat capacity and optical experiments in single crystals of
Sr_2Ru_(1-x)Ti_xO_4. Samples with x=0.1 and 0.2 reveal purely semiconducting
resistivity behavior along c and the charge transport is close to localization
within the ab-plane. A strong anisotropy in the magnetic susceptibility appears
at temperatures below 100 K. Moreover magnetic ordering in c-direction with a
moment of order 0.01 mu_B/f.u. occurs at low temperatures. On doping the
low-temperature linear term of the heat capacity becomes reduced significantly
and probably is dominated by spin fluctuations. Finally, the optical
conductivity reveals the anisotropic character of the dc resistance, with the
in-plane conductance roughly following a Drude-type behavior and an insulating
response along c
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