Time to AIDS from 1992 to 1999 in HIV-1-Infected Subjects with Known Date of Infection.

To estimate the change in AIDS incubation time during three periods characterized by different availability of antiretroviral treatments, data from the French Hospital Database on HIV of 4702 HIV-1-positive subjects with a documented date of infection were analyzed. Times from seroconversion to AIDS were compared in three periods: period 1 from January 1992 to June 1995 (monotherapy); period 2 from July 1995 to June 1996 (dual therapy); and period 3 from July 1996 to June 1999 (triple therapy). Nonparametric survival analyses were performed to account for staggered entries in the database and during each period. From periods 1 to 3, antiretroviral treatments were initiated earlier after infection, more subjects were treated, and the nature of regimens changed (25.6% of subjects were treated with monotherapy in period 1, 34.6% were treated with dual therapy in period 2, and 53.4% were treated with triple therapy in period 3). Compared with period 1, the relative hazard (RH) of AIDS was 0.31 in period 3 (95% confidence interval [CI]: 0.24-0.39). When comparing period 3 with period 2, the RH of AIDS was 0.36 (CI: 0.29-0.45). Assuming a log normal distribution, the median time to AIDS was estimated as 8.0 years in period 1 (CI: 6.0-10.6), 9.8 years in period 2 (CI: 8.5, 11.2), and 20.0 years in period 3 (CI: 17.1-23.3). This lengthening in time to AIDS from 1992 to 1999 was particularly marked in the period after the introduction of triple therapy, including protease inhibitors

Učinak trojnog potencijalnog bedema na svojstva elektronskog stanja suprarešetke GaAs/AlxGa1−xAs

By the formalism of transfer matrix, transmission coefficient and localization length are studied in the case of a superlattice containing semiconductor in barrier height trimer (HBT). We are interested in the GaAs/AlxGa1-xAs layers, having identical thickness, where the aluminium concentration x takes at random two different values, with the constraint that one of them appears only triply, i.e. it is a random trimer barrier (RTB). The electronic states of SR were studied by theoretical calculation of transmission coefficient of the miniband structure. We observed that the process of delocalization exists when the disorder is correlated, the result confirming the theoretical studies already found for the case of the dimer.Primjenom formalizma matrice prijenosa, proučavamo koeficijent propusnosti i duljinu lokalizacije suprarešetke koja sadrži u poluvodiču trojni potencijalni bedem. Zanimaju nas slojevi GaAs/AlxGa1−xAs, jednake debljine, u kojima su slučajno odabrane dvije koncentracije x, uz uvjet da se jedna javlja tri puta, tj. proučavamo slučajan trojni bedem. Elektronska stanja suprarešetke izvodimo teorijskim razmatranjem koeficijenta propusnosti strukture minivrpci. Opažamo postojanje procesa delokalizacije ako postoji koreliran nered, što potvrđuje teorijske rezultate već poznate za slučaj dvojnog sloja

Učinak trojnog potencijalnog bedema na svojstva elektronskog stanja suprarešetke GaAs/AlxGa1−xAs

By the formalism of transfer matrix, transmission coefficient and localization length are studied in the case of a superlattice containing semiconductor in barrier height trimer (HBT). We are interested in the GaAs/AlxGa1-xAs layers, having identical thickness, where the aluminium concentration x takes at random two different values, with the constraint that one of them appears only triply, i.e. it is a random trimer barrier (RTB). The electronic states of SR were studied by theoretical calculation of transmission coefficient of the miniband structure. We observed that the process of delocalization exists when the disorder is correlated, the result confirming the theoretical studies already found for the case of the dimer.Primjenom formalizma matrice prijenosa, proučavamo koeficijent propusnosti i duljinu lokalizacije suprarešetke koja sadrži u poluvodiču trojni potencijalni bedem. Zanimaju nas slojevi GaAs/AlxGa1−xAs, jednake debljine, u kojima su slučajno odabrane dvije koncentracije x, uz uvjet da se jedna javlja tri puta, tj. proučavamo slučajan trojni bedem. Elektronska stanja suprarešetke izvodimo teorijskim razmatranjem koeficijenta propusnosti strukture minivrpci. Opažamo postojanje procesa delokalizacije ako postoji koreliran nered, što potvrđuje teorijske rezultate već poznate za slučaj dvojnog sloja

Virulence of Moroccan f. Revealed by International Differential Barley Genotypes

Pyrenophora teres f. teres (Ptt), causing net blotch in barley, is an important and frequently isolated leaf pathogen across the globe. The virulence spectrum of Ptt from North Africa including Morocco is poorly understood. Sixteen barley genotypes were challenged, at seedling stage, with 15 Ptt isolates that were collected from different agroecological zones of Morocco. The experiment was conducted in a factorial arrangement of treatments in a randomized complete block design with three replicates. The ANOVA revealed highly significant (P < 0.001) effects of genotype (G), isolate (I) and G×I interaction explaining 23.2, 62.5, and 13.9% of the variation, respectively. Therefore, the current study revealed highly diverse virulence pattern of Moroccan isolates. Furthermore, the results indicated that minor virulence of Ptt isolates dominated over virulence interaction. In addition, Taffa (6-rowed) and Aglou (2 rowed), had the highest level of resistance to Ptt, while Coast and Rabat071 were the most susceptible genotypes. Pt2, Pt7, Pt8 and Pt4 were being the most virulent isolates, while Pt10 and Pt11 were the least virulent isolates. The emergence of the new Ptt pathotypes, which were highly virulent to durable resistance in Rabat071 posed a risk of breaking down the currently deployed resistance to net blotch in Morocco. A careful evaluation and selection of Ptt isolates based on minor virulence pattern to barley genotypes is essential for successful barley breeding program for resistance to net blotch in Morocco

Analysis of diversity genetic of Moroccan net blotch populations using amplified fragment length polymorphism (AFLP) markers

Net blotch caused by Pyrenophora teres f. teres is the most harmful foliar disease in barley generating significant economic losses in Morocco. Populations of P. teres f. teres were collected from different regions of Morocco. Thirty five (35) P. teres f. teres isolates, single conidial, were isolated and were subjected to molecular study using amplified fragment length polymorphism (AFLP) technique. Out of the fourteen primers combinations tested, four primers combinations were selected to disclose the polymorphism between the different P. teres f. teres isolates. The molecular characterization of these isolates showed high degree of polymorphism reaching 95% and identifying 25 specific genotypes. The genetic variability of the different isolates of P. teres f. teres within and between Moroccan regions was highlighted, disclosing no linkage between the isolates and their geographical origins. This result might be due to informal material flow between regions.Key words: Barley, net blotch, Pyrenophora teres f. teres, amplified fragment length polymorphism (AFLP), genetic diversity

Structural disorder and its effects in laser wavelength GaAs–AlxGa1−xAs superlattice

Nous revisitons ici la théorie, utilisée en analyse des profils de raies de diffraction des rayons X et des neutrons, relative à la fonction de forme du pic dite de pseudo -Voigt (notée pV). Nous présentons une généralisation des expressions de la largeur intégrale et à mi-hauteur de la fonction pV, de la transformée de Fourier de cette fonction ainsi que du seuil du parametre de mélange η. Nous incorporons nos résultats dans la procédure de fit, ce qui améliore les facteurs de précision.Proučavamo optički aktivan sustav GaAs–AlxGa1−xAs načinjen na GaAs podlozi s ciljem postizanja laserske emisije u širokom infracrvenom području (9 to 90 µm). Ispitujemo učinak koncentracije aluminija “x” i širine potencijalne jame “a” kako bi se odredio njihov utjecaj na lasersku valnu duljinu. Mjerenjima prolaska svjetlosti pokazujemo da se uvođenjem strukturne nepravilnosti (uz zadržavanja periodičnosti) dvo- i troslojeva u našim superrešetkama postiže vjerojatnost prolaska jednaka 1, što znači da su odnosna stanja rezonantna.This study focuses on optically active system GaAs–AlxGa1−xAs based on the GaAs substrate, with the aim to achieve lasers emitting in a wide range of infrared (9 to 90 µm). The effect of aluminium concentration “x” and the potential well width “a” is studied to see their direct effects on the laser wavelength. We show from measurements of transmission that the introduction of a structural disorder (preserving the system periodicity) by doublet or triplet within our superlattices provides delocalised electronic states characterized by a probability of transmission equal to 1, meaning that the corresponding state is resonant

Structural disorder and its effects in laser wavelength GaAs–AlxGa1−xAs superlattice

Nous revisitons ici la théorie, utilisée en analyse des profils de raies de diffraction des rayons X et des neutrons, relative à la fonction de forme du pic dite de pseudo -Voigt (notée pV). Nous présentons une généralisation des expressions de la largeur intégrale et à mi-hauteur de la fonction pV, de la transformée de Fourier de cette fonction ainsi que du seuil du parametre de mélange η. Nous incorporons nos résultats dans la procédure de fit, ce qui améliore les facteurs de précision.Proučavamo optički aktivan sustav GaAs–AlxGa1−xAs načinjen na GaAs podlozi s ciljem postizanja laserske emisije u širokom infracrvenom području (9 to 90 µm). Ispitujemo učinak koncentracije aluminija “x” i širine potencijalne jame “a” kako bi se odredio njihov utjecaj na lasersku valnu duljinu. Mjerenjima prolaska svjetlosti pokazujemo da se uvođenjem strukturne nepravilnosti (uz zadržavanja periodičnosti) dvo- i troslojeva u našim superrešetkama postiže vjerojatnost prolaska jednaka 1, što znači da su odnosna stanja rezonantna.This study focuses on optically active system GaAs–AlxGa1−xAs based on the GaAs substrate, with the aim to achieve lasers emitting in a wide range of infrared (9 to 90 µm). The effect of aluminium concentration “x” and the potential well width “a” is studied to see their direct effects on the laser wavelength. We show from measurements of transmission that the introduction of a structural disorder (preserving the system periodicity) by doublet or triplet within our superlattices provides delocalised electronic states characterized by a probability of transmission equal to 1, meaning that the corresponding state is resonant

Acute partial Budd-Chiari syndrome and portal vein thrombosis in cytomegalovirus primary infection: a case report

BACKGROUND: Splanchnic vein thrombosis may complicate inherited thrombotic disorders. Acute cytomegalovirus infection is a rare cause of acquired venous thrombosis in the portal or mesenteric territory, but has never been described extending into a main hepatic vein. CASE PRESENTATION: A 36-year-old immunocompetent woman presented with acute primary cytomegalovirus infection in association with extensive thrombosis in the portal and splenic vein. In addition, a fresh thrombus was evident in the right hepatic vein. A thorough evaluation for a hypercoagulable state was negative. The clinical course, biological evolution, radiological and histological findings were consistent with cytomegalovirus hepatitis complicated by a partial acute Budd-Chiari syndrome and portal thrombosis. Therapeutic anticoagulation was associated with a slow clinical improvement and partial vascular recanalization. CONCLUSION: We described in details a new association between cytomegalovirus infection and acute venous thrombosis both in the portal vein and in the right hepatic vein, realizing a partial Budd-Chiari syndrome. One should be aware that this rare thrombotic event may be complicated by partial venous outflow block