264 research outputs found
Atomic resolution mapping of phonon excitations in STEM-EELS experiments
Atomically resolved electron energy-loss spectroscopy experiments are
commonplace in modern aberrationcorrected transmission electron microscopes.
Energy resolution has also been increasing steadily with the continuous
improvement of electron monochromators. Electronic excitations however are
known to be delocalised due to the long range interaction of the charged
accelerated electrons with the electrons in a sample. This has made several
scientists question the value of combined high spatial and energy resolution
for mapping interband transitions and possibly phonon excitation in crystals.
In this paper we demonstrate experimentally that atomic resolution information
is indeed available at very low energy losses around 100 meV expressed as a
modulation of the broadening of the zero loss peak. Careful data analysis
allows us to get a glimpse of what are likely phonon excitations with both an
energy loss and gain part. These experiments confirm recent theoretical
predictions on the strong localisation of phonon excitations as opposed to
electronic excitations and show that a combination of atomic resolution and
recent developments in increased energy resolution will offer great benefit for
mapping phonon modes in real space
Electronically coupled complementary interfaces between perovskite band insulators
Perovskite oxides exhibit a plethora of exceptional electronic properties,
providing the basis for novel concepts of oxide-electronic devices. The
interest in these materials is even extended by the remarkable characteristics
of their interfaces. Studies on single epitaxial connections between the two
wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either
high-mobility electron conductors or insulating, depending on the atomic
stacking sequences. In the latter case they are conceivably positively charged.
For device applications, as well as for basic understanding of the interface
conduction mechanism, it is important to investigate the electronic coupling of
closely-spaced complementary interfaces. Here we report the successful
realization of such electronically coupled complementary interfaces in SrTiO3 -
LaAlO3 thin film multilayer structures, in which the atomic stacking sequence
at the interfaces was confirmed by quantitative transmission electron
microscopy. We found a critical separation distance of 6 perovskite unit cell
layers, corresponding to approximately 2.3 nm, below which a decrease of the
interface conductivity and carrier density occurs. Interestingly, the high
carrier mobilities characterizing the separate electron doped interfaces are
found to be maintained in coupled structures down to sub-nanometer interface
spacing
Optimized fabrication of high quality La0.67Sr0.33MnO3 thin films considering all essential characteristics
In this article, an overview of the fabrication and properties of high
quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high quality LSMO film
combines a smooth surface morphology with a large magnetization and a small
residual resistivity, while avoiding precipitates and surface segregation. In
literature, typically only a few of these issues are adressed. We therefore
present a thorough characterization of our films, which were grown by pulsed
laser deposition. The films were characterized with reflection high energy
electron diffraction, atomic force microscopy, x-ray diffraction, magnetization
and transport measurements, x-ray photoelectron spectroscopy and scanning
transmission electron microscopy. The films have a saturation magnetization of
4.0 {\mu}B/Mn, a Curie temperature of 350 K and a residual resistivity of 60
{\mu}{\Omega}cm. These results indicate that high quality films, combining both
large magnetization and small residual resistivity, were realized. A comparison
between different samples presented in literature shows that focussing on a
single property is insufficient for the optimization of the deposition process.
For high quality films, all properties have to be adressed. For LSMO devices,
the thin film quality is crucial for the device performance. Therefore, this
research is important for the application of LSMO in devices.Comment: Accepted for publication in Journal of Physics D - Applied Physic
The atomic lensing model: new opportunities for atom-by-atom metrology of heterogeneous nanomaterials
The atomic lensing model has been proposed as a promising method facilitating
atom-counting in heterogeneous nanocrystals [KHW van den Bos et. al, Phys. Rev.
Lett. 116 (2016) 246101] Here, image simulations will validate the model, which
describes dynamical diffraction as a superposition of individual atoms
focussing the incident electrons. It will be demonstrated that the model is
reliable in the annular dark field regime for crystals having columns
containing dozens of atoms. By using the principles of statistical detection
theory, it will be shown that this model gives new opportunities for detecting
compositional differences
Controlled growth of hexagonal gold nanostructures during thermally induced self-assembling on Ge(001) surface
Nano-sized gold has become an important material in various fields of science and technology, where control over the size and crystallography is desired to tailor the functionality. Gold crystallizes in the face-centered cubic (fcc) phase, and its hexagonal closed packed (hcp) structure is a very unusual and rare phase. Stable Au hcp phase has been reported to form in nanoparticles at the tips of some Ge nanowires. It has also recently been synthesized in the form of thin graphene-supported sheets which are unstable under electron beam irradiation. Here, we show that stable hcp Au 3D nanostructures with well-defined crystallographic orientation and size can be systematically created in a process of thermally induced self-assembly of thin Au layer on Ge(001) monocrystal. The Au hcp crystallite is present in each Au nanostructure and has been characterized by different electron microscopy techniques. We report that a careful heat treatment above the eutectic melting temperature and a controlled cooling is required to form the hcp phase of Au on a Ge single crystal. This new method gives scientific prospects to obtain stable Au hcp phase for future applications in a rather simple manner as well as redefine the phase diagram of Gold with Germanium
Optimized fabrication of high-quality La0.67Sr0.33MnO3 thin films considering all essential characteristics
In this paper, an overview of the fabrication and properties of high-quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high-quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, while avoiding precipitates and surface segregation. In the literature, typically only a few of these issues are adressed. We therefore present a thorough characterization of our films, which were grown by pulsed laser deposition. The films were characterized with reflection high energy electron diffraction, atomic force microscopy, x-ray diffraction, magnetization and transport measurements, x-ray photoelectron spectroscopy and scanning transmission electron microscopy. The films have a saturation magnetization of 4.0 µB/Mn, a Curie temperature of 350 K and a residual resistivity of 60 µΩ cm. These results indicate that high-quality films, combining both large magnetization and small residual resistivity, were realized. A comparison between different samples presented in the literature shows that focussing on a single property is insufficient for the optimization of the deposition process. For high-quality films, all properties have to be adressed. For LSMO devices, the thin-film quality is crucial for the device performance. Therefore, this research is important for the application of LSMO in devices
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