49 research outputs found

    Design and evaluation of PM Ti surfaces modified by colloidal techniques and diffusion processes for biomedical applications

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    The aim of this work was the modification of the composition and surface microstructure of powder metallurgy titanium to improve the wear resistance and reduce the elastic modulus while maintaining the corrosion behavior, characteristics needed for biomedical applications. For this purpose, Mo and Nb coatings were produced by colloidal techniques. Stable aqueous suspensions were prepared from micro-sized powder of Mo and Nb particles, deposited onto the powder metallurgy titanium substrates (green or sintered). After a heat treatment to promote the diffusion and the consolidation of the layers, microstructural changes were obtained. In the case of green substrates, the co-sintering process provides a diffusion depth of 85-100 micron. In the as-sintered case, a uniform depth of 40-65 microns was reached. The surfaces were characterised by micro-hardness, corrosion and tribocorrosion testing, and the results showed that hardened surfaces presented lower tendency to corrosion both under static conditions and under sliding.Funds were provided by Spanish Government (programme MINECO, ref. MAT2012-38650-C02-01), Regional Government of Madrid (programme MULTIMAT-CHALLENGE, ref. S2013/MIT-2862) and Institute of Alvaro Alonso Barba (IAAB) for the research stay in CMEMS-UMINHO (University of Minho).info:eu-repo/semantics/publishedVersio

    Effects of Impurity Content on the Sintering Characteristics of Plasma-Sprayed Zirconia

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    Yttria-stabilized zirconia powders, containing different levels of SiO2 and Al2O3, have been plasma sprayed onto metallic substrates. The coatings were detached from their substrates and a dilatometer was used to monitor the dimensional changes they exhibited during prolonged heat treatments. It was found that specimens containing higher levels of silica and alumina exhibited higher rates of linear contraction, in both in-plane and through-thickness directions. The in-plane stiffness and the through-thickness thermal conductivity were also measured after different heat treatments and these were found to increase at a greater rate for specimens with higher impurity (silica and alumina) levels. Changes in the pore architecture during heat treatments were studied using Mercury Intrusion Porosimetry (MIP). Fine scale porosity (<_50 nm) was found to be sharply reduced even by relatively short heat treatments. This is correlated with improvements in inter-splat bonding and partial healing of intra-splat microcracks, which are responsible for the observed changes in stiffness and conductivity, as well as the dimensional changes

    Intimal aortic sarcoma mimicking ruptured thoracoabdominal type IV aneurysm. a rare case report and review of the literature

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    Primary intimal aortic sarcoma represents a very rare and highly lethal medical entity. Diagnosis is made either by embolic events caused by the tumor or by surrounding tissue symptoms such as pain. Herein we report an extremely rare case of a 51-year-old man previously operated for ascending aortic aneurysm, who presented with clinical and radiological findings suggestive of a ruptured thoracoabdominal type IV aneurysm. The patient underwent radical resection of the aorta and surrounding tissue with placement of a composite 4-branched graft. The diagnosis was made by frozen section and regular histopathologic examination of the specimen and the patient received adjuvant chemotherapy. Nine months after surgery the patient is still alive and has no signs of recurrence. We review the literature and discuss the option of postoperative chemotherapy

    Type-III Dirac fermions in HfxZr1-xTe2topological semimetal candidate

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    Topological semimetals host interesting new types of low-energy quasiparticles such as type-I and type-II Dirac and Weyl fermions. Type-III topological semimetals can emerge exactly at the border between type-I and II, characterized by a line-like Fermi surface and a flat energy dispersion near the topological band crossing. Here, we theoretically predict that 1T-HfTe2 and 1T-ZrTe2 transition metal dichalcogenides are type-I and type-II DSMs, respectively. By alloying the two materials, a new HfxZr1-xTe2 alloy with type-III Dirac cone emerges at x = 0.2, in combination with 1% in-plane compressive strain. By imaging the electronic energy bands with in situ angle-resolved photoemission spectroscopy of this random alloy with the desired composition, grown by molecular beam epitaxy on InAs(111) substrates, we provide experimental evidence that the tοp of type-III Dirac cone lies at - or very close to - the Fermi level. © 2021 Author(s)

    Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition

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    The reliability of Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-semiconductor capacitors grown by plasma-assisted atomic oxygen deposition on Ge substrates is investigated with an emphasis on the influence of crystallization annealing. The capacitors show very weak wake-up and imprint effects, allowing reliable operation in excess of 10 years, which is attributed partly to the clean, oxide-free Ge/HZO bottom interface. The weak temperature dependence and the observed asymmetries between polarization up and down states and between positive and negative coercive voltage shifts lead to the conclusion that imprint is controlled by carrier injection at the top electrode interface. The latter mechanism is associated with trapping at interfacial oxygen-vacancy defects. On the other hand, using ultrafast (millisecond) flash annealing improves the leakage current by at least an order of magnitude and the endurance by a factor of 3 compared to conventional rapid thermal annealing, which makes them suitable for low power nonvolatile memory applications where (ultra)thin HZO is an essential requirement. © 2020 Author(s)

    Molecular beam epitaxy of thin HfTe2 semimetal films

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    Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally aligned with the AlN substrate, albeit with an in-plane mosaic spread, as it would be expected for van der Waals epitaxy. Angle resolved photoemission spectroscopy combined with first principles electronic band structure calculations show steep linearly dispersing conduction and valence bands which cross near the Brillouin zone center, providing evidence that HfTe2/AlN is an epitaxial topological Dirac semimetal. © 2016 IOP Publishing Ltd
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