Laser performance of Er-doped potassium double tungstate epitaxial layers

© 2018 IEEE. Laser operation of Er-doped epitaxial layer of monoclinic double tungstate composition grown onto undoped KYW substrate is demonstrated for the first time. Maximum output power of 16 mW with slope efficiency of 64% is achieved at 1606 nm under direct in-band pumping by a diode-pump Er,Yb-laser at 1522 nm

Непрерывные лазеры на кристалле Ho:KY(WO4)2и монокристаллическом слое Ho:KGdYbY(WO4)2 при резонансной накачке

2 μm lasers are in demand for a number of practical applications, such as environmental monitoring, remote sensing, medicine, material processing, and are also used as a pump sources for optical parametric generators. Crystals of double potassium tungstates doped with ions of rare-earth elements were shown to be promising materials both for  the  creation  of  classical  solid-state  lasers  and  waveguide  lasers. The aim of this work was to develop a tunable pump laser in the spectral region of 1.9 µm based on double tungstate crystals doped with thulium ions and to study the lasing characteristics of a Ho:KY(WO4)2 crystal and a Ho:KGdYbY(WO4)2 single-crystal epitaxial layer under in-band pumping.With a Ho(1at.%):KY(WO4)2  crystal, continuous wave low-threshold lasing with an output power of 85 mW with a slope efficiency of 54 % at 2074 nm was achieved. For the first time to our knowledge, continuous wave laser  generation  in  a  waveguide  configuration  is  realized  in  a  single-crystal  layer of potassium tungstate doped with holmium ions grown by liquid-phase epitaxy. The maximum output power at a wavelength of 2055 nm was 16.5 mW.Лазерные источники, излучающие в спектральной области около 2 мкм, востребованы для ряда практических применений, таких как экологический мониторинг окружающей среды, дистанционное зондирование Земли, медицина, обработка материалов, а также используются в качестве источников возбуждающего излучения параметрических генераторов света. Кристаллы двойных калиевых вольфраматов, активированные ионами редкоземельных элементов, показали себя перспективными материалами как для создания классических твердотельных, так и волноводных лазеров. Целью настоящей работы являлось создание перестраиваемого лазера накачки, излучающего в спектральной области 1,9 мкм, на основе активированных ионами тулия кристаллов двойных вольфраматов и исследование генерационных характеристик кристалла Ho:KY(WO4)2 и монокристаллического эпитаксиального слоя Ho:KGdYbY(WO4)2 при резонансной накачке в полосу поглощения 5I8 → 5I7 .В лазере на основе кристалла Ho(1ат.%):KY(WO4)2 получена непрерывная низкопороговая генерация с выходной мощностью 85 мВт при дифференциальной эффективности 54 % на длине волны 2074 нм. Впервые реализована непрерывная генерация в волноводном режиме в монокристаллическом слое калиевого вольфрамата, активированного ионами гольмия, выращенного методом жидкофазной эпитаксии. Максимальная выходная мощность на длине волны 2055 нм составила 16,5 мВт

Laser performance of Er-doped potassium double tungstate epitaxial layers

© 2018 IEEE. Laser operation of Er-doped epitaxial layer of monoclinic double tungstate composition grown onto undoped KYW substrate is demonstrated for the first time. Maximum output power of 16 mW with slope efficiency of 64% is achieved at 1606 nm under direct in-band pumping by a diode-pump Er,Yb-laser at 1522 nm

Growth, spectroscopy, and laser characterization of Er:KGd<inf>x</inf>Yb<inf>y</inf>Y<inf>1−x−y</inf>(WO<inf>4</inf>)<inf>2</inf>epitaxial layers

© 2017 Optical Society of America. We report on the composition of Er-doped KGd x Yb y Y 1−x−y (WO 4 ) 2 layers to be grown onto undoped KY(WO 4 ) 2 substrate providing fine lattice matching and high refractive index contrast with the substrate and fabrication of high optical quality Er1.3 at: %: KGd 0.2 Yb 0.15 Y 0.65 (WO 4 ) 2 epitaxial layers with thickness up to 180 μm. Absorption and luminescence properties of the layer were measured and laser action under direct in-band pumping was reported for the first time, to our knowledge, in a non-waveguide configuration. A maximum output power of 16 mW with slope efficiency of 64% was achieved at 1606 nm

Growth, spectroscopy, and laser characterization of Er:KGd<inf>x</inf>Yb<inf>y</inf>Y<inf>1−x−y</inf>(WO<inf>4</inf>)<inf>2</inf>epitaxial layers

© 2017 Optical Society of America. We report on the composition of Er-doped KGd x Yb y Y 1−x−y (WO 4 ) 2 layers to be grown onto undoped KY(WO 4 ) 2 substrate providing fine lattice matching and high refractive index contrast with the substrate and fabrication of high optical quality Er1.3 at: %: KGd 0.2 Yb 0.15 Y 0.65 (WO 4 ) 2 epitaxial layers with thickness up to 180 μm. Absorption and luminescence properties of the layer were measured and laser action under direct in-band pumping was reported for the first time, to our knowledge, in a non-waveguide configuration. A maximum output power of 16 mW with slope efficiency of 64% was achieved at 1606 nm

Growth, spectroscopy, and laser characterization of Er:KGd<inf>x</inf>Yb<inf>y</inf>Y<inf>1−x−y</inf>(WO<inf>4</inf>)<inf>2</inf>epitaxial layers

© 2017 Optical Society of America. We report on the composition of Er-doped KGd x Yb y Y 1−x−y (WO 4 ) 2 layers to be grown onto undoped KY(WO 4 ) 2 substrate providing fine lattice matching and high refractive index contrast with the substrate and fabrication of high optical quality Er1.3 at: %: KGd 0.2 Yb 0.15 Y 0.65 (WO 4 ) 2 epitaxial layers with thickness up to 180 μm. Absorption and luminescence properties of the layer were measured and laser action under direct in-band pumping was reported for the first time, to our knowledge, in a non-waveguide configuration. A maximum output power of 16 mW with slope efficiency of 64% was achieved at 1606 nm

Laser performance of Er-doped potassium double tungstate epitaxial layers

Laser operation of Er-doped epitaxial layer of monoclinic double tungstate composition grown onto undoped KYW substrate is demonstrated for the first time. Maximum output power of 16 mW with slope efficiency of 64% is achieved at 1606 nm under direct in-band pumping by a diode-pump Er,Yb-laser at 1522 nm.</p

Непрерывные лазеры на кристалле Ho:KY(WO4)2 и монокристаллическом слое Ho:KGdYbY(WO4)2 при резонансной накачке

2 μm lasers are in demand for a number of practical applications, such as environmental monitoring, remote sensing, medicine, material processing, and are also used as a pump sources for optical parametric generators. Crystals of double potassium tungstates doped with ions of rare-earth elements were shown to be promising materials both for the creation of classical solid-state lasers and waveguide lasers. The aim of this work was to develop a tunable pump laser in the spectral region of 1.9 μm based on double tungstate crystals doped with thulium ions and to study the lasing characteristics of a Ho:KY(WO4)2 crystal and a Ho:KGdYbY(WO4)2 single-crystal epitaxial layer under in-band pumping. With a Ho(1at.%):KY(WO4)2 crystal, continuous wave low-threshold lasing with an output power of 85 mW with a slope efficiency of 54 % at 2074 nm was achieved. For the first time to our knowledge, continuous wave laser generation in a waveguide configuration is realized in a single-crystal layer of potassium tungstate doped with holmium ions grown by liquid-phase epitaxy. The maximum output power at a wavelength of 2055 nm was 16.5 mW

Continuous-wave and Q-switched operation of a compact, diode-pumped Yb3+:KY(WO4)2 planar waveguide laser

A diode-pumped LPE-grown Yb:KYW planar waveguide laser is demonstrated in a microchip monolithic cavity configuration. Output powers as high as 148mW and thresholds as low as 40mW were demonstrated during continuous-wave operation. Pulses of 170ns duration with maximum pulse energy of 44nJ at a 722kHz repetition rate were generated when Q-switched using a semiconductor saturable absorber mirror