A new gas discharge process for preparation of non-fouling surfaces on biomaterials

A non-fouling surface containing immobilized polyethylene oxide (PEO) was achieved using an argon radio-frequency glow discharge treatment (RFGD) of polyethylene films precoated with Brij hydrocarbon-PEO surfactants. Surface wettability of RFGD-treated and washed surfaces increased the most when PEO surfactants with unsaturated and/or long alkyl tails were used. ESCA measurements of treated and washed surfaces showed increases of surface O/C ratios and ether carbon peaks in high resolution Cls spectra. These results demonstrate the retention of the PEO surfactants on the treated surfaces. Fibrinogen adsorp tion on these treated surfaces was significantly reduced, from 500 to 50 ng/cm2, indicating the non-fouling properties of the RFGD-immobilized PEO surfactants

Immobilization of Polyethylene Oxide Surfactants for Non-Fouling Biomaterial Surfaces Using an Argon Glow Discharge Treatment

A non-fouling (protein-resistant) polymer surface is achieved by the covalent immobilization of polyethylene oxide (PEO) surfactants using an inert gas discharge treatment. Treated surfaces have been characterized using electron spectroscopy for chemical analysis (ESCA), static secondary ion mass spectrometry (SSIMS), water contact angle measurement, fibrinogen adsorption, and platelet adhesion. This paper is intended to review our recent work in using this simple surface modification process to obtain wettable polymer surfaces in general, and non-fouling biomaterial surfaces in particular

Quantum planes and quantum cylinders from Poisson homogeneous spaces

Quantum planes and a new quantum cylinder are obtained as quantization of Poisson homogeneous spaces of two different Poisson structures on classical Euclidean group E(2).Comment: 13 pages, plain Tex, no figure

Polaronic transport induced by competing interfacial magnetic order in a La0.7_{0.7}Ca0.3_{0.3}MnO3_{3}/BiFeO3_{3} heterostructure

Using ultrafast optical spectroscopy, we show that polaronic behavior associated with interfacial antiferromagnetic order is likely the origin of tunable magnetotransport upon switching the ferroelectric polarity in a La$_{0.7}$Ca$_{0.3}$MnO$_{3}$/BiFeO$_{3}$ (LCMO/BFO) heterostructure. This is revealed through the difference in dynamic spectral weight transfer between LCMO and LCMO/BFO at low temperatures, which indicates that transport in LCMO/BFO is polaronic in nature. This polaronic feature in LCMO/BFO decreases in relatively high magnetic fields due to the increased spin alignment, while no discernible change is found in the LCMO film at low temperatures. These results thus shed new light on the intrinsic mechanisms governing magnetoelectric coupling in this heterostructure, potentially offering a new route to enhancing multiferroic functionality

Quantum orbits of R-matrix type

Given a simple Lie algebra \gggg, we consider the orbits in \gggg^* which are of R-matrix type, i.e., which possess a Poisson pencil generated by the Kirillov-Kostant-Souriau bracket and the so-called R-matrix bracket. We call an algebra quantizing the latter bracket a quantum orbit of R-matrix type. We describe some orbits of this type explicitly and we construct a quantization of the whole Poisson pencil on these orbits in a similar way. The notions of q-deformed Lie brackets, braided coadjoint vector fields and tangent vector fields are discussed as well.Comment: 18 pp., Late

Modeling The Post-Burn-In Abnormal Base Current In Algaas/Gaas Heterojunction Bipolar Transistors

The base current of AlGaAs/GaAs heterojunction bipolar transistor subjected to a long burn-in test often exhibits an abnormal characteristic with an ideality factor of about 3, rather than a normal ideality factor between 1 and 2, in the midvoltage range, We develope an analytical model to investigate the physical mechanisms underlying such a characteristic. Consistent with the finding of an experimental work reported recently, our model calculations show that the recombination current in the base has an ideality factor of about 3 in the midvoltage range and that such a current is responsible for the observed abnormal base current in heterojunction bipolar transistor after a long burn-in test. Post-burn-in data measured from two different heterojunction bipolar transistors are also included in support of the model