Transition temperature of ferromagnetic semiconductors: a dynamical mean field study

We formulate a theory of doped magnetic semiconductors such as Ga$_{1-x}$Mn$_x$As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature $T_c$ as a function of magnetic coupling strength $J$ and carrier density $n$. We find that $T_c$ is determined by a subtle interplay between carrier density and magnetic coupling.Comment: 4 pages, 4 figure

Polaron percolation in diluted magnetic semiconductors

We theoretically study the development of spontaneous magnetization in diluted magnetic semiconductors as arising from a percolation of bound magnetic polarons. Within the framework of a generalized percolation theory we derive analytic expressions for the Curie temperature and the magnetization, obtaining excellent quantitative agreement with Monte Carlo simulation results and good qualitative agreement with experimental results.Comment: 5 page

Magnetic properties of the Ag-In-rare-earth 1/1 approximants

We have performed magnetic susceptibility and neutron scattering measurements on polycrystalline Ag-In-RE (RE: rare-earth) 1/1 approximants. In the magnetic susceptibility measurements, for most of the RE elements, inverse susceptibility shows linear behaviour in a wide temperature range, confirming well localized isotropic moments for the RE$^{3+}$ ions. Exceptionally for the light RE elements, such as Ce and Pr, non-linear behaviour was observed, possibly due to significant crystalline field splitting or valence fluctuation. For RE = Tb, the susceptibility measurement clearly shows a bifurcation of the field-cooled and zero-field-cooled susceptibility at $T_{\rm f} = 3.7$~K, suggesting a spin-glass-like freezing. On the other hand, neutron scattering measurements detect significant development of short-range antiferromagnetic spin correlations in elastic channel, which accompanied by a broad peak at $\hbar\omega = 4$~meV in inelastic scattering spectrum. These features have striking similarity to those in the Zn-Mg-Tb quasicrystals, suggesting that the short-range spin freezing behaviour is due to local high symmetry clusters commonly seen in both the systems.Comment: 14 pages, 12 figure

Spin-polarized current amplification and spin injection in magnetic bipolar transistors

The magnetic bipolar transistor (MBT) is a bipolar junction transistor with an equilibrium and nonequilibrium spin (magnetization) in the emitter, base, or collector. The low-injection theory of spin-polarized transport through MBTs and of a more general case of an array of magnetic {\it p-n} junctions is developed and illustrated on several important cases. Two main physical phenomena are discussed: electrical spin injection and spin control of current amplification (magnetoamplification). It is shown that a source spin can be injected from the emitter to the collector. If the base of an MBT has an equilibrium magnetization, the spin can be injected from the base to the collector by intrinsic spin injection. The resulting spin accumulation in the collector is proportional to $\exp(qV_{be}/k_BT)$, where $q$ is the proton charge, $V_{be}$ is the bias in the emitter-base junction, and $k_B T$ is the thermal energy. To control the electrical current through MBTs both the equilibrium and the nonequilibrium spin can be employed. The equilibrium spin controls the magnitude of the equilibrium electron and hole densities, thereby controlling the currents. Increasing the equilibrium spin polarization of the base (emitter) increases (decreases) the current amplification. If there is a nonequilibrium spin in the emitter, and the base or the emitter has an equilibrium spin, a spin-valve effect can lead to a giant magnetoamplification effect, where the current amplifications for the parallel and antiparallel orientations of the the equilibrium and nonequilibrium spins differ significantly. The theory is elucidated using qualitative analyses and is illustrated on an MBT example with generic materials parameters.Comment: 14 PRB-style pages, 10 figure

Solid-Liquid Phase Diagrams for Binary Metallic Alloys: Adjustable Interatomic Potentials

We develop a new approach to determining LJ-EAM potentials for alloys and use these to determine the solid-liquid phase diagrams for binary metallic alloys using Kofke's Gibbs-Duhem integration technique combined with semigrand canonical Monte Carlo simulations. We demonstrate that it is possible to produce a wide-range of experimentally observed binary phase diagrams (with no intermetallic phases) by reference to the atomic sizes and cohesive energies of the two elemental materials. In some cases, it is useful to employ a single adjustable parameter to adjust the phase diagram (we provided a good choice for this free parameter). Next, we perform a systematic investigation of the effect of relative atomic sizes and cohesive energies of the elements on the binary phase diagrams. We then show that this approach leads to good agreement with several experimental binary phase diagrams. The main benefit of this approach is not the accurately reproduction of experimental phase diagrams, but rather to provide a method by which material properties can be continuously changed in simulations studies. This is one of the keys to the use of atomistic simulations to understand mechanisms and properties in a manner not available to experiment

Saturated Ferromagnetism and Magnetization Deficit in Optimally Annealed (Ga,Mn)As Epilayers

We examine the Mn concentration dependence of the electronic and magnetic properties of optimally annealed Ga1-xMnxAs epilayers for 1.35% < x < 8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn concentration up to x ~ 0.05, but are almost constant for larger x, with Tc ~ 110 K. The ferromagnetic moment per Mn ion decreases monotonically with increasing x, implying that an increasing fraction of the Mn spins do not participate in the ferromagnetism. By contrast, the derived domain wall thickness, an important parameter for device design, remains surprisingly constant.Comment: 8 pages, 4 figures, submitted for Rapid Communication in Phys Rev

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.Comment: Minor Revisions. To appear in Phys. Rev. Let

Spin Diode Based on Fe/MgO Double Tunnel Junction

We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic.Comment: 14 page

Noncollinear Ferromagnetism in (III,Mn)V Semiconductors

We investigate the stability of the collinear ferromagnetic state in kinetic exchange models for (III,Mn)V semiconductors with randomly distributed Mn ions >. Our results suggest that {\em noncollinear ferromagnetism} is commom to these semiconductor systems. The instability of the collinear state is due to long-ranged fluctuations invloving a large fraction of the localized magnetic moments. We address conditions that favor the occurrence of noncollinear groundstates and discuss unusual behavior that we predict for the temperature and field dependence of its saturation magnetization.Comment: 5 pages, one figure included, presentation of technical aspects simplified, version to appear in Phys. Rev. Let

Duplication-divergence model of protein interaction network

We show that the protein-protein interaction networks can be surprisingly well described by a very simple evolution model of duplication and divergence. The model exhibits a remarkably rich behavior depending on a single parameter, the probability to retain a duplicated link during divergence. When this parameter is large, the network growth is not self-averaging and an average vertex degree increases algebraically. The lack of self-averaging results in a great diversity of networks grown out of the same initial condition. For small values of the link retention probability, the growth is self-averaging, the average degree increases very slowly or tends to a constant, and a degree distribution has a power-law tail.Comment: 8 pages, 13 figure