Electronic Transport in the Oxygen Deficient Ferromagnetic Semiconducting TiO2−δ_{2-\delta}

TiO$_{2-\delta}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconductor titanium ion impurity donor energy levels. Transport resistivity measurements in thin films of TiO$_{2-\delta}$ are presented as a function of temperature and magnetic field. Magneto- and Hall- resistivity is explained in terms of electronic excitations from the titanium ion donor levels into the conduction band.Comment: RevTeX4, Four pages, Four Figures in ^.eps forma

Linear and nonlinear optical characteristics of the Falicov-Kimball model

We calculate the linear and nonlinear optical properties of the Falicov-Kimball model for a mixed-valent system within the self-consistent mean-field approximation. Second-harmonic generation can only occur if the mixed-valent state has a built-in coherence between the itinerant d-electrons and the localized f-holes. By contrast, second-harmonic generation cannot occur for solutions of the model with f-site occupation as a good quantum number. As an experimental test of coherence in mixed-valent compounds we propose a measurement of the dynamic second-order susceptibility.Comment: 4 pages, 2 PostScript figures, to appear in Physical Review Letter

Equilibration in Quark Gluon Plasma

The hydrodynamic expansion rate of quark gluon plasma (QGP) is evaluated and compared with the scattering rate of quarks and gluons within the system. Partonic scattering rates evaluated within the ambit of perturbative Quantum Choromodynamics (pQCD) are found to be smaller than the expansion rate evaluated with ideal equation of state (EoS) for the QGP. This indicate that during the space-time evolution the system remains out of equilibrium. Enhancement of pQCD cross sections and a more realistic EoS keep the partons closer to the equilibrium.Comment: To be published in the Quark Matter 2008 poster proceeding

Absence of Minimum metallic Conductivity in Gd(3-x)vxS4 at Very Low Temperature and Evidence for a Coulomb Gap

Gd(3-x)vxS4 provides a convenient analog of a compensated semiconductor in which, for x≃0.3, the mobility edge can be tuned smoothly through the Fermi energy by the application of a magnetic field. The results of a search for a minimum metallic conductivity demonstrate that, down to T=6 mK, the metal-insulator transition is smooth. In the insulating regime, the temperature dependence of the conductivity was more consistent with the theory of mutual interactions than with the theory of pure localization

Theory of Electronic Ferroelectricity

We present a theory of the linear and nonlinear optical characteristics of the insulating phase of the Falicov-Kimball model within the self-consistent mean-field approximation. The Coulomb attraction between the itinerant d-electrons and the localized f-holes gives rise to a built-in coherence between the d and f-states, which breaks the inversion symmetry of the underlying crystal, leading to: (1) electronic ferroelectricity, (2) ferroelectric resonance, and (3) a nonvanishing susceptibility for second-harmonic generation. As experimental tests of such a built-in coherence in mixed-valent compounds we propose measurements of the static dielectric constant, the microwave absorption spectrum, and the dynamic second-order susceptibility.Comment: 15 pages, 5 PostScript figures, submitted to Physical Review

Evolution of magnetic polarons and spin-carrier interactions through the metal-insulator transition in Eu1−x_{1-x}Gdx_{x}O

Raman scattering studies as functions of temperature, magnetic field, and Gd-substitution are used to investigate the evolution of magnetic polarons and spin-carrier interactions through the metal-insulator transition in Eu$_{1-x}$Gd$_{x}$O. These studies reveal a greater richness of phase behavior than have been previously observed using transport measurements: a spin-fluctuation-dominated paramagnetic (PM) phase regime for T $>$ T$^{*}$ $>$ T$_{C}$, a two-phase regime for T $<$ T$^{*}$ in which magnetic polarons develop and coexist with a remnant of the PM phase, and an inhomogeneous ferromagnetic phase regime for T $<$ T$_{C}$

Fluctuation induced hopping and spin polaron transport

We study the motion of free magnetic polarons in a paramagnetic background of fluctuating local moments. The polaron can tunnel only to nearby regions of local moments when these fluctuate into alignment. We propose this fluctuation induced hopping as a new transport mechanism for the spin polaron. We calculate the diffusion constant for fluctuation induced hopping from the rate at which local moments fluctuate into alignment. The electrical resistivity is then obtained via the Einstein relation. We suggest that the proposed transport mechanism is relevant in the high temperature phase of the Mn pyrochlore colossal magneto resistance compounds and Europium hexaboride.Comment: 8 pages, 3 figure

Doping a semiconductor to create an unconventional metal

Landau Fermi liquid theory, with its pivotal assertion that electrons in metals can be simply understood as independent particles with effective masses replacing the free electron mass, has been astonishingly successful. This is true despite the Coulomb interactions an electron experiences from the host crystal lattice, its defects, and the other ~1022/cm3 electrons. An important extension to the theory accounts for the behaviour of doped semiconductors1,2. Because little in the vast literature on materials contradicts Fermi liquid theory and its extensions, exceptions have attracted great attention, and they include the high temperature superconductors3, silicon-based field effect transistors which host two-dimensional metals4, and certain rare earth compounds at the threshold of magnetism5-8. The origin of the non-Fermi liquid behaviour in all of these systems remains controversial. Here we report that an entirely different and exceedingly simple class of materials - doped small gap semiconductors near a metal-insulator transition - can also display a non-Fermi liquid state. Remarkably, a modest magnetic field functions as a switch which restores the ordinary disordered Fermi liquid. Our data suggest that we have finally found a physical realization of the only mathematically rigourous route to a non-Fermi liquid, namely the 'undercompensated Kondo effect', where there are too few mobile electrons to compensate for the spins of unpaired electrons localized on impurity atoms9-12.Comment: 17 pages 4 figures supplemental information included with 2 figure

Conductivity of Metallic Si:B near the Metal-Insulator Transition: Comparison between Unstressed and Uniaxially Stressed Samples

The low-temperature dc conductivities of barely metallic samples of p-type Si:B are compared for a series of samples with different dopant concentrations, n, in the absence of stress (cubic symmetry), and for a single sample driven from the metallic into the insulating phase by uniaxial compression, S. For all values of temperature and stress, the conductivity of the stressed sample collapses onto a single universal scaling curve. The scaling fit indicates that the conductivity of si:B is proportional to the square-root of T in the critical range. Our data yield a critical conductivity exponent of 1.6, considerably larger than the value reported in earlier experiments where the transition was crossed by varying the dopant concentration. The larger exponent is based on data in a narrow range of stress near the critical value within which scaling holds. We show explicitly that the temperature dependences of the conductivity of stressed and unstressed Si:B are different, suggesting that a direct comparison of the critical behavior and critical exponents for stress- tuned and concentration-tuned transitions may not be warranted

Magnetic Interactions and Transport in (Ga,Cr)As

The magnetic, transport, and structural properties of (Ga,Cr)As are reported. Zincblende Ga$_{1-x}$Cr$_{x}$As was grown by low-temperature molecular beam epitaxy (MBE). At low concentrations, x$\sim$0.1, the materials exhibit unusual magnetic properties associated with the random magnetism of the alloy. At low temperatures the magnetization M(B) increases rapidly with increasing field due to the alignment of ferromagnetic units (polarons or clusters) having large dipole moments of order 10-10$^2$$\mu_B$. A standard model of superparamagnetism is inadequate for describing both the field and temperature dependence of the magnetization M(B,T). In order to explain M(B) at low temperatures we employ a distributed magnetic moment (DMM) model in which polarons or clusters of ions have a distribution of moments. It is also found that the magnetic susceptibility increases for decreasing temperature but saturates below T=4 K. The inverse susceptibility follows a linear-T Curie-Weiss law and extrapolates to a magnetic transition temperature $\theta$=10 K. In magnetotransport measurements, a room temperature resistivity of $\rho$=0.1 $\Omega$cm and a hole concentration of $\sim10^{20}$ cm$^{-3}$ are found, indicating that Cr can also act as a acceptor similar to Mn. The resistivity increases rapidly for decreasing temperature below room temperature, and becomes strongly insulating at low temperatures. The conductivity follows exp[-(T$_1$/T)$^{1/2}$] over a large range of conductivity, possible evidence of tunneling between polarons or clusters.Comment: To appear in PRB 15 Mar 200