Electronic transport properties of few-layer graphene materials

Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane present in nature -just one atom thick- it is the strongest material, it is transparent and it is a very good conductor with room temperature charge mobilities larger than the typical mobilities found in silicon. The significance played by this new material system is even more apparent when considering that graphene is the thinnest member of a larger family: the few-layer graphene materials. Even though several physical properties are shared between graphene and its few-layers, recent theoretical and experimental advances demonstrate that each specific thickness of few-layer graphene is a material with unique physical properties.Comment: 26 pages, 8 figure

Spin configurations in circular and rectangular vertical quantum dots in a magnetic field: Three-dimensional self-consistent simulation

The magnetic field dependence of the electronic properties of \textit{real} single vertical quantum dots in circular and rectangular mesas is investigated within a full three-dimensional multiscale self-consistent approach without any {\it \'a priori} assumptions about the shape and strength of the confinement potential. The calculated zero field electron addition energies are in good agreement with available experimental data for both mesa geometries. Charging diagrams in a magnetic field for number of electrons up to five are also computed. Consistent with the experimental data, we found that the charging curves for the rectangular mesa dot in a magnetic field are flatter and exhibit less features than for a circular mesa dot. Evolution of the singlet-triplet energy separation in the two electron system for both dot geometries in magnetic field was also investigated. In the limit of large field, beyond the singlet-triplet transition, the singlet-triplet energy difference continues to become more negative in a circular mesa dot without any saturation within the range of considered magnetic fields whilst it is predicted to asymptotically approach zero for the rectangular mesa dot. This different behavior is attributed to the symmetry "breaking" that occurs in the singlet wave-functions in the rectangular mesa dot but not in the circular one.Comment: 12 pages, 8 gifure

Semiconductor quantum dots for electron spin qubits

We report on our recent progress in applying semiconductor quantum dots for spin-based quantum computation, as proposed by Loss and DiVincenzo (1998 Phys. Rev. A 57 120). For the purpose of single-electron spin resonance, we study different types of single quantum dot devices that are designed for the generation of a local ac magnetic field in the vicinity of the dot. We observe photon-assisted tunnelling as well as pumping due to the ac voltage induced by the ac current driven through a wire in the vicinity of the dot, but no evidence for ESR so far. Analogue concepts for a double quantum dot and the hydrogen molecule are discussed in detail. Our experimental results in laterally coupled vertical double quantum dot device show that the Heitler–London model forms a good approximation of the two-electron wavefunction. The exchange coupling constant J is estimated. The relevance of this system for two-qubit gates, in particular the SWAP operation, is discussed. Density functional calculations reveal the importance of the gate electrode geometry in lateral quantum dots for the tunability of J in realistic two-qubit gates