AlGaInN Laser Diode Technology for Systems Applications

Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation

Lateral grating DFB AlGaInN laser diodes for optical communications and atomic clocks

AlGaInN laser diode technology is of considerable interest for telecom applications and next generation atomic optical clocks based on Sr (by using 422nm & 461nm) and Rb at 420.2nm.Very narrow linewidths (<1MHz) are required for such applications. We report lateral gratings on AlGaInN ridge waveguide laser diodes to achieve a single wavelength device with a good side mode suppression ratio (SMSR) that is suitable for atomic clock and telecom applications

Free-space and underwater GHz data transmission using AlGaInN laser diode technology

Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications; in particular for free space laser communication. Conventional underwater communication is done acoustically with very slow data rates, short reach, and vulnurable for interception. AlGaInN blue-green laser diode technology allows the possibility of both airbourne links and underwater telecom that operate at very fast data rates (GHz), long reach (100’s of metres underwater) and can also be quantum encrypted. The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Galliumnitride (GaN) blue laser diode is reported in free-space and underwate

High Speed Visible Light Communication Using Blue GaN Laser Diodes

GaN-based laser diodes have been developed over the last 20 years making them desirable for many security and defence applications, in particular, free space laser communications. Unlike their LED counterparts, laser diodes are not limited by their carrier lifetime which makes them attractive for high speed communication, whether in free space, through fiber or underwater. Gigabit data transmission can be achieved in free space by modulating the visible light from the laser with a pseudo-random bit sequence (PRBS), with recent results approaching 5 Gbit/s error free data transmission. By exploiting the low-loss in the blue part of the spectrum through water, data transmission experiments have also been conducted to show rates of 2.5 Gbit/s underwater. Different water types have been tested to monitor the effect of scattering and to see how this affects the overall transmission rate and distance. This is of great interest for communication with unmanned underwater vehicles (UUV) as the current method using acoustics is much slower and vulnerable to interception. These types of laser diodes can typically reach 50-100 mW of power which increases the length at which the data can be transmitted. This distance could be further improved by making use of high power laser arrays. Highly uniform GaN substrates with low defectivity allow individually addressable laser bars to be fabricated. This could ultimately increase optical power levels to 4 W for a 20-emitter array. Overall, the development of GaN laser diodes will play an important part in free space optical communications and will be vital in the advancement of security and defence applications

HIGH PRESSURE FREEZE-OUT OF ELECTRONS IN UNDOPED GaN CRYSTAL. PROOF OF EXISTENCE OF RESONANT DONOR STATE (NITROGEN VACANCY)

We investigated free carriers related opticał absorption in GaN in hydrostatic pressures up to 30 GPa. The disappearance of this absorption at pressures close to 18 GPa was explained by trapping electrons resulting from the shift of nitrogen vacancy related donor level into the GaN energy gap at high pressure. We estimated the energetic position of this level at atmospheric pressure to be about 0.8 eV above the conduction band minimum

Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates

We report on high-excitation luminescence spectroscopy in In x Ga 1−x N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures

AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications

Gallium Nitride laser diodes fabricated from the AlGaInN material system is an emerging technology for laser sources from the UV to visible and is a potential key enabler for new system applications such as free-space (underwater & air bourne links) and plastic optical fibre telecommunications. We measure visible light (free-space and underwater) communications at high frequency (up to 2.5 Gbit/s) and in plastic optical fibre (POF) using a directly modulated GaN laser diode

A phase III randomised, double-blind, parallel-group study comparing SB4 with etanercept reference product in patients with active rheumatoid arthritis despite methotrexate therapy

To compare the efficacy and safety of SB4 (an etanercept biosimilar) with reference product etanercept (ETN) in patients with moderate to severe rheumatoid arthritis (RA) despite methotrexate (MTX) therapy. METHODS:This is a phase III, randomised, double-blind, parallel-group, multicentre study with a 24-week primary endpoint. Patients with moderate to severe RA despite MTX treatment were randomised to receive weekly dose of 50 mg of subcutaneous SB4 or ETN. The primary endpoint was the American College of Rheumatology 20% (ACR20) response at week 24. Other efficacy endpoints as well as safety, immunogenicity and pharmacokinetic parameters were also measured. RESULTS: 596 patients were randomised to either SB4 (N=299) or ETN (N=297). The ACR20 response rate at week 24 in the per-protocol set was 78.1% for SB4 and 80.3% for ETN. The 95% CI of the adjusted treatment difference was -9.41% to 4.98%, which is completely contained within the predefined equivalence margin of -15% to 15%, indicating therapeutic equivalence between SB4 and ETN. Other efficacy endpoints and pharmacokinetic endpoints were comparable. The incidence of treatment-emergent adverse events was comparable (55.2% vs 58.2%), and the incidence of antidrug antibody development up to week 24 was lower in SB4 compared with ETN (0.7% vs 13.1%). CONCLUSIONS:SB4 was shown to be equivalent with ETN in terms of efficacy at week 24. SB4 was well tolerated with a lower immunogenicity profile. The safety profile of SB4 was comparable with that of ETN

Factors associated with quality of life in systemic sclerosis: a cross-sectional study

© 2019, The Author(s). Introduction: Systemic sclerosis (SSc) is a connective tissue disease characterized by progressive fibrosis of the skin and internal organs, leading to their failure and disturbances in the morphology and function of blood vessels. The disease affects people in different ways, and identifying how the difficulties and limitations are related to quality of life may contribute to designing helpful interventions. The aim of this study was to identify factors associated with quality of life in people with SSc. Methods: This was a cross-sectional study conducted in 11 rheumatic centres in Poland. Patients diagnosed with SSc were included. Quality of life was measured using the SSc Quality of Life Questionnaire (SScQoL). The following candidate factors were entered in preliminary multivariable analysis: age, place of residence, marital status, occupational status, disease type, disease duration, pain, fatigue, intestinal problems, breathing problems, Raynaud’s symptoms, finger ulcerations, disease severity, functional disability, anxiety and depression. Factors that achieved statistical significance at the 10% level were then entered into a final multivariable model. Factors achieving statistical significance at the 5% level in the final model were considered to be associated with quality of life in SSc. Results: In total, 231 participants were included. Mean age (SD) was 55.82 (12.55) years, disease duration 8.39 (8.18) years and 198 (85.7%) were women. Factors associated with quality of life in SSc were functional disability (β = 2.854, p < 0.001) and anxiety (β = 0.404, p < 0.001). This model with two factors (functional disability and anxiety) explained 56.7% of the variance in patients with diffuse SSc and 73.2% in those with localized SSc. Conclusions: Functional disability and anxiety are significantly associated with quality of life in SSc. Interventions aimed at improving either of these factors may contribute towards improving the quality of life of people with SSc