1,452 research outputs found
Reduced Joule heating in nanowires
The temperature distribution in nanowires due to Joule heating is studied
analytically using a continuum model and a Green's function approach. We show
that the temperatures reached in nanowires can be much lower than that
predicted by bulk models of Joule heating, due to heat loss at the nanowire
surface that is important at nanoscopic dimensions, even when the thermal
conductivity of the environment is relatively low. In addition, we find that
the maximum temperature in the nanowire scales weakly with length, in contrast
to the bulk system. A simple criterion is presented to assess the importance of
these effects. The results have implications for the experimental measurements
of nanowire thermal properties, for thermoelectric applications, and for
controlling thermal effects in nanowire electronic devices.Comment: 4 pages, 3 figures. To appear in Applied Physics Letter
Crosstalk between nanotube devices: contact and channel effects
At reduced dimensionality, Coulomb interactions play a crucial role in
determining device properties. While such interactions within the same carbon
nanotube have been shown to have unexpected properties, device integration and
multi-nanotube devices require the consideration of inter-nanotube
interactions. We present calculations of the characteristics of planar carbon
nanotube transistors including interactions between semiconducting nanotubes
and between semiconducting and metallic nanotubes. The results indicate that
inter-tube interactions affect both the channel behavior and the contacts. For
long channel devices, a separation of the order of the gate oxide thickness is
necessary to eliminate inter-nanotube effects. Because of an exponential
dependence of this length scale on dielectric constant, very high device
densities are possible by using high-k dielectrics and embedded contacts
Multiple Functionality in Nanotube Transistors
Calculations of quantum transport in a carbon nanotube transistor show that
such a device offers unique functionality. It can operate as a ballistic
field-effect transistor, with excellent characteristics even when scaled to 10
nm dimensions. At larger gate voltages, channel inversion leads to resonant
tunneling through an electrostatically defined nanoscale quantum dot. Thus the
transistor becomes a gated resonant tunelling device, with negative
differential resistance at a tunable threshold. For the dimensions considered
here, the device operates in the Coulomb blockade regime, even at room
temperature.Comment: To appear in Phys. Rev. Let
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Negative differential resistance in nanotube devices
Carbon nanotube junctions are predicted to exhibit negative differential
resistance, with very high peak-to-valley current ratios even at room
temperature. We treat both nanotube p-n junctions and undoped
metal-nanotube-metal junctions, calculating quantum transport through the
self-consistent potential within a tight-binding approximation. The undoped
junctions in particular may be suitable for device integration.Comment: 4 pages, 4 figures, to appear in Physical Review Letter
Properties of short channel ballistic carbon nanotube transistors with ohmic contacts
We present self-consistent, non-equilibrium Green's function calculations of
the characteristics of short channel carbon nanotube transistors, focusing on
the regime of ballistic transport with ohmic contacts. We first establish that
the band lineup at the contacts is renormalized by charge transfer, leading to
Schottky contacts for small diameter nanotubes and ohmic contacts for large
diameter nanotubes, in agreement with recent experiments. For short channel
ohmic contact devices, source-drain tunneling and drain-induced barrier
lowering significantly impact the current-voltage characteristics. Furthermore,
the ON state conductance shows a temperature dependence, even in the absence of
phonon scattering or Schottky barriers. This last result also agrees with
recently reported experimental measurements.Comment: Nanotechnology, in pres
Long-Range Ordering of Vibrated Polar Disks
Vibrated polar disks have been used experimentally to investigate collective
motion of driven particles, where fully-ordered asymptotic regimes could not be
reached. Here we present a model reproducing quantitatively the single, binary
and collective properties of this granular system. Using system sizes not
accessible in the laboratory, we show in silico that true long-range order is
possible in the experimental system. Exploring the model's parameter space, we
find a phase diagram qualitatively different from that of dilute or point-like
particle systems.Comment: 5 pages, 4 figure
A JKO splitting scheme for Kantorovich-Fisher-Rao gradient flows
In this article we set up a splitting variant of the JKO scheme in order to
handle gradient flows with respect to the Kantorovich-Fisher-Rao metric,
recently introduced and defined on the space of positive Radon measure with
varying masses. We perform successively a time step for the quadratic
Wasserstein/Monge-Kantorovich distance, and then for the Hellinger/Fisher-Rao
distance. Exploiting some inf-convolution structure of the metric we show
convergence of the whole process for the standard class of energy functionals
under suitable compactness assumptions, and investigate in details the case of
internal energies. The interest is double: On the one hand we prove existence
of weak solutions for a certain class of reaction-advection-diffusion
equations, and on the other hand this process is constructive and well adapted
to available numerical solvers.Comment: Final version, to appear in SIAM SIM
Can Electric Field Induced Energy Gaps In Metallic Carbon Nanotubes?
The low-energy electronic structure of metallic single-walled carbon nanotube
(SWNT) in an external electric field perpendicular to the tube axis is
investigated. Based on tight-binding approximation, a field-induced energy gap
is found in all (n, n) SWNTs, and the gap shows strong dependence on the
electric field and the size of the tubes. We numerically find a universal
scaling that the gap is a function of the electric field and the radius of
SWNTs, and the results are testified by the second-order perturbation theory in
weak field limit. Our calculation shows the field required to induce a 0.1
gap in metallic SWNTs can be easily reached under the current
experimental conditions. It indicates a kind of possibility to apply nanotubes
to electric signal-controlled nanoscale switching devices
RLZAP: Relative Lempel-Ziv with Adaptive Pointers
Relative Lempel-Ziv (RLZ) is a popular algorithm for compressing databases of
genomes from individuals of the same species when fast random access is
desired. With Kuruppu et al.'s (SPIRE 2010) original implementation, a
reference genome is selected and then the other genomes are greedily parsed
into phrases exactly matching substrings of the reference. Deorowicz and
Grabowski (Bioinformatics, 2011) pointed out that letting each phrase end with
a mismatch character usually gives better compression because many of the
differences between individuals' genomes are single-nucleotide substitutions.
Ferrada et al. (SPIRE 2014) then pointed out that also using relative pointers
and run-length compressing them usually gives even better compression. In this
paper we generalize Ferrada et al.'s idea to handle well also short insertions,
deletions and multi-character substitutions. We show experimentally that our
generalization achieves better compression than Ferrada et al.'s implementation
with comparable random-access times
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