Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd2_{2}PdSi3_3

Electrical resistivity ($\rho$), magnetoresistance (MR), magnetization, thermopower and Hall effect measurements on the single crystal Gd$_{2}$PdSi$_3$, crystallizing in an AlB$_2$-derived hexagonal structure are reported. The well-defined minimum in $\rho$ at a temperature above N\'eel temperature (T$_N$= 21 K) and large negative MR below $\sim$ 3T$_N$, reported earlier for the polycrystals, are reproducible even in single crystals. Such features are generally uncharacteristic of Gd alloys. In addition, we also found interesting features in other data, e.g., two-step first-order-like metamagnetic transitions for the magnetic field along [0001] direction. The alloy exhibits anisotropy in all these properties, though Gd is a S-state ion.Comment: RevTeX, 5 pages, 6 encapsulated postscript figures; scheduled to be published in Phy. Rev. B (01 November 1999, B1

Experimental investigation of the response of a harmonically excited hard Duffing oscillator

A single degree-of-freedom torsional vibratory system, which constitutes a third-order dissipative dynamical system, has been fabricated as a mechanical analogue of hard Duffing equation with strong nonlinearity. The forced response of the system reveals complicated and chaotic motion at low frequency regime. Besides usual jump phenomenon, unpredictable jump phenomenon with two and three coexisting periodic attractors is also observed

Spectral Representation at Finite Temperature

This is a short review on the thermal, spectral representation in the real-time version of the finite temperature quantum field theory. After presenting a clear derivation of the spectral representation, we discuss the properties of its spectral function. Two applications of this representation are then considered. One is the solution of the Dyson equation for the thermal propagator. The other is the formulation of the QCD sum rules at finite temperature.Comment: Changed content, added figures. To appear in Ind. J. Phys.

Fast Symbolic Algorithms for Omega-Regular Games under Strong Transition Fairness

We consider fixpoint algorithms for two-player games on graphs with $\omega$-regular winning conditions, where the environment is constrained by a strong transition fairness assumption. Strong transition fairness is a widely occurring special case of strong fairness, which requires that any execution is strongly fair with respect to a specified set of live edges: whenever the source vertex of a live edge is visited infinitely often along a play, the edge itself is traversed infinitely often along the play as well. We show that, surprisingly, strong transition fairness retains the algorithmic characteristics of the fixpoint algorithms for $\omega$-regular games -- the new algorithms can be obtained simply by replacing certain occurrences of the controllable predecessor by a new almost sure predecessor operator. For Rabin games with $k$ pairs, the complexity of the new algorithm is $O(n^{k+2}k!)$ symbolic steps, which is independent of the number of live edges in the strong transition fairness assumption. Further, we show that GR(1) specifications with strong transition fairness assumptions can be solved with a 3-nested fixpoint algorithm, same as the usual algorithm. In contrast, strong fairness necessarily requires increasing the alternation depth depending on the number of fairness assumptions. We get symbolic algorithms for (generalized) Rabin, parity and GR(1) objectives under strong transition fairness assumptions as well as a direct symbolic algorithm for qualitative winning in stochastic $\omega$-regular games that runs in $O(n^{k+2}k!)$ symbolic steps, improving the state of the art. Finally, we have implemented a BDD-based synthesis engine based on our algorithm. We show on a set of synthetic and real benchmarks that our algorithm is scalable, parallelizable, and outperforms previous algorithms by orders of magnitude

Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications

We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance and high drive-current vertical devices. Silicided 80-nm vertical n-channel devices fabricated using 0.5-?m lithography are compared with nonsilicided devices. A source–drain (S/D) activation anneal of 30 s at 1100 ?C is shown to deliver a channel length of 80 nm, and the silicidation gives a 60% improvement in drive current in comparison with nonsilicided devices. The silicided devices exhibit a subthreshold slope (S) of 87 mV/dec and a drain-induced barrier lowering (DIBL) of 80 mV/V, compared with 86 mV/dec and 60 mV/V for nonsilicided devices. S-parameter measurements on the 80-nm vertical nMOS devices give an fT of 20 GHz, which is approximately two times higher than expected for comparable lateral MOSFETs fabricated using the same 0.5-?m lithography. Issues associated with silicidation down the pillar sidewall are investigated by reducing the activation anneal time to bring the silicided region closer to the p-n junction at the top of the pillar. In this situation, nonlinear transistor turn-on is observed in drain-on-top operation and dramatically degraded drive current in source-on-top operation. This behavior is interpreted using mixed-mode simulations, which show that a Schottky contact is formed around the perimeter of the pillar when the silicided contact penetrates too close to the top S/D junction down the side of the pillar