The Strengthened Hardy Inequalities and its New Generalizations

In this article, using the properties of power mean, new generalizations of the strengthened Hardy Inequalities are proved

Quantum Key Distribution with Blind Polarization Bases

We propose a new quantum key distribution scheme that uses the blind polarization basis. In our scheme the sender and the receiver share key information by exchanging qubits with arbitrary polarization angles without basis reconciliation. As only random polarizations are transmitted, our protocol is secure even when a key is embedded in a not-so-weak coherent-state pulse. We show its security against the photon number splitting attack and the impersonation attack.Comment: Security has been improved upon referee's comment. 4 pages and 2 figure

K*{\Lambda}(1116) photoproduction and nucleon resonances

In this presentation, we report our recent studies on the $K^*\Lambda(1116)$ photoproduction off the proton target, using the tree-level Born approximation, via the effective Lagrangian approach. In addition, we include the nine (three- or four-star confirmed) nucleon resonances below the threshold $\sqrt{s}_\mathrm{th}\approx2008$ MeV, to interpret the discrepancy between the experiment and previous theoretical studies, in the vicinity of the threshold region. From the numerical studies, we observe that the $S_{11}(1535)$ and $S_{11}(1650)$ play an important role for the cross-section enhancement near the $\sqrt{s}_\mathrm{th}$. It also turns out that, in order to reproduce the data, we have the vector coupling constants $g_{K^*S_{11}(1535)\Lambda}=(7.0\sim9.0)$ and $g_{K^*S_{11}(1650)\Lambda}=(5.0\sim6.0)$.Comment: 2 pages, 2 figures, talk given at International Conference on the structure of baryons, BARYONS'10, Dec. 7-11, 2010, Osaka, Japa

Local Hall effect in hybrid ferromagnetic/semiconductor devices

We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, we confirmed that our data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.Comment: 4 pages with 4 fugures. Accepted for publication in Applied Physics Letter

Nonvolatile memories using deep traps formed in HfO₂ by Nb ion implantation

We report nonvolatile memories (NVMs) based on deep-energy trap levels formed in HfO₂ by metal ion implantation. A comparison of Nb- and Ta-implanted samples shows that suitable charge-trapping centers are formed in Nb-implanted samples, but not in Ta-implanted samples. This is consistent with density-functional theory calculations which predict that only Nb will form deep-energy levels in the bandgap of HfO₂. Photocurrent spectroscopy exhibits characteristics consistent with one of the trap levels predicted in these calculations. Nb-implanted samples showing memory windows in capacitance–voltage (V) curves always exhibit current (I) peaks in I–V curves, indicating that NVM effects result from deep traps in HfO₂. In contrast, Ta-implanted samples show dielectric breakdowns during the I–V sweeps between 5 and 11 V, consistent with the fact that no trap levels are present. For a sample implanted with a fluence of 10¹³Nb cm⁻², the charge losses after 10⁴ s are ∼9.8 and ∼25.5% at room temperature (RT) and 85°C, respectively, and the expected charge loss after 10 years is ∼34% at RT, very promising for commercial NVMs