Strong electronic correlation and strain effects at the interfaces between polar and nonpolar complex oxides

The interface between the polar LaAlO$_3$ and nonpolar SrTiO$_3$ layers has been shown to exhibit various electronic and magnetic phases such as two dimensional electron gas, superconductivity, magnetism and electronic phase separation. These rich phases are expected due to the strong interplay between charge, spin and orbital degree of freedom at the interface between these complex oxides, leading to the electronic reconstruction in this system. However, until now all of these new properties have been studied extensively based on the interfaces which involve a polar LaAlO$_3$ layer. To investigate the role of the A and B cationic sites of the ABO$_3$ polar layer, here we study various combinations of polar/nonpolar oxide (NdAlO$_3$/SrTiO$_3$, PrAlO$_3$/SrTiO$_3$ and NdGaO$_3$/SrTiO$_3$) interfaces which are similar in nature to LaAlO$_3$/SrTiO$_3$ interface. Our results show that all of these new interfaces can also produce 2DEG at their interfaces, supporting the idea that the electronic reconstruction is the driving mechanism for the creation of the 2DEG at these oxide interfaces. Furthermore, the electrical properties of these interfaces are shown to be strongly governed by the interface strain and strong correlation effects provided by the polar layers. Our observations may provide a novel approach to further tune the properties of the 2DEG at the selected polar/nonpolar oxide interfaces.Comment: 5 pages, 4 figure

Size effect in ion transport through angstrom-scale slits

It has been an ultimate but seemingly distant goal of nanofluidics to controllably fabricate capillaries with dimensions approaching the size of small ions and water molecules. We report ion transport through ultimately narrow slits that are fabricated by effectively removing a single atomic plane from a bulk crystal. The atomically flat angstrom-scale slits exhibit little surface charge, allowing elucidation of the role of steric effects. We find that ions with hydrated diameters larger than the slit size can still permeate through, albeit with reduced mobility. The confinement also leads to a notable asymmetry between anions and cations of the same diameter. Our results provide a platform for studying effects of angstrom-scale confinement, which is important for development of nanofluidics, molecular separation and other nanoscale technologies

Carrier freeze-out induced metal-insulator transition in oxygen deficient SrTiO3 films

We report the optical, electrical transport, and magnetotransport properties of high quality oxygen deficient SrTiO3 (STO) single crystal film fabricated by pulsed laser deposition and reduced in the vacuum chamber. The oxygen vacancy distribution in the thin film is expected to be uniform. By comparing the electrical properties with oxygen deficient bulk STO, it was found that the oxygen vacancies in bulk STO is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the oxygen deficient STO film was found to be induced by the carrier freeze-out effect. The low temperature frozen state can be re-excited by an electric field, Joule heating, and surprisingly also a large magnetic field.Comment: 5 pages, 5 figure

Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality

Magnetoresistance (MR) anisotropy in LaAlO3/SrTiO3 (LAO/STO) interfaces is compared between samples prepared in high oxygen partial pressure (PO2) of 10-4 mbar exhibiting quasi-two-dimensional (quasi-2D) electron gas and low PO2 of 10-6 mbar exhibiting 3D conductivity. While MR of an order of magnitude larger was observed in low PO2 samples compared to those of high PO2 samples, large MR anisotropies were observed in both cases. The MR with the out-of-plane field is always larger compared to the MR with in-plane field suggesting lower dissipation of electrons from interface versus defect scattering. The quasi-2D interfaces show a negative MR at low temperatures while the 3D interfaces show positive MR for all temperatures. Furthermore, the angle relationship of MR anisotropy for these two different cases and temperature dependence of in-plane MR are also presented. Our study demonstrates that MR can be used to distinguish the dimensionality of the charge transport and various (defect, magnetic center, and interface boundary) scattering processes in this system.Comment: 14 pages, 5 figure

Sharp-1 regulates TGF-β signaling and skeletal muscle regeneration

10.1242/jcs.136648Journal of Cell Science1273599-608JNCS

Ambipolar bistable switching effect of graphene

Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. By applying a back gate bias to tune the Fermi level, an opposite sequence of switching with the different charge carriers, holes and electrons, is found. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching. To confirm this hypothesis, one-level transport model simulations including charging effect are performed and the results are consistent with our experimental data. Methods of improving the ON/OFF ratio of graphene resistive switching are suggested

Tunneling characteristics of graphene

Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of non-uniform disordered graphene is confirmed. A memory switching effect of 100000% ON/OFF ratio is demonstrated in the tunneling regime which can be employed in various applications

CCR2 and CXCR4 regulate peripheral blood monocyte pharmacodynamics and link to efficacy in experimental autoimmune encephalomyelitis

<p>Abstract</p> <p>Background</p> <p>CCR2 plays a key role in regulating monocyte trafficking to sites of inflammation and therefore has been the focus of much interest as a target for inflammatory disease.</p> <p>Methods</p> <p>Here we examined the effects of CCR2 blockade with a potent small molecule antagonist to determine the pharmacodynamic consequences on the peripheral blood monocyte compartment in the context of acute and chronic inflammatory processes.</p> <p>Results</p> <p>We demonstrate that CCR2 antagonism <it>in vivo </it>led to a rapid decrease in the number of circulating Ly6C^himonocytes and that this decrease was largely due to the CXCR4-dependent sequestration of these cells in the bone marrow, providing pharmacological evidence for a mechanism by which monocyte dynamics are regulated <it>in vivo</it>. CCR2 antagonism led to an accumulation of circulating CCL2 and CCL7 levels in the blood, indicating a role for CCR2 in regulating the levels of its ligands under homeostatic conditions. Finally, we show that the pharmacodynamic changes due to CCR2 antagonism were apparent after chronic dosing in mouse experimental autoimmune encephalomyelitis, a model in which CCR2 blockade demonstrated a dramatic reduction in disease severity, manifest in a reduced accumulation of monocytes and other cells in the CNS.</p> <p>Conclusion</p> <p>CCR2 antagonism <it>in vivo </it>has tractable pharmacodynamic effects that can be used to align target engagement with biologic effects on disease activity.</p

The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation

The use of graphene electronics in space will depend on the radiation hardness of graphene. The damage threshold of graphene samples, subjected to 2 MeV proton irradiation, was found to increase with layer number and also when the graphene layer was supported by a substrate. The thermal properties of graphene as a function of the number of layers or as influenced by the substrate argue against a thermal model for the production of damage by the ion beam. We propose a model of intense electronically-stimulated surface desorption of the atoms as the most likely process for this damage mechanism.Comment: 20 pages, 5 figure