Compressibility of a two-dimensional hole gas in tilted magnetic field

We have measured compressibility of a two-dimensional hole gas in p-GaAs/AlGaAs heterostructure, grown on a (100) surface, in the presence of a tilted magnetic field. It turns out that the parallel component of magnetic field affects neither the spin splitting nor the density of states. We conclude that: (a) g-factor in the parallel magnetic field is nearly zero in this system; and (b) the level of the disorder potential is not sensitive to the parallel component of the magnetic field

Soil development on basic and ultrabasic rocks in cold environments of Russia traced by mineralogical composition and pore space characteristics

Recent soils from basic (amphibolite and meta-gabbro amphibolite) and ultrabasic (serpentinous dunite) rocks formed in cold and humid climates of Northern Eurasia (Russia) were studied to detail the characterization of soils and rocks with special attention to the interdependence of porosity system and rock mineralogy. The study plots were located in taiga and tundra zones of East Fennoscandia and the Polar UralMountainsyesBelgorod State National Research Universit

Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO3_3/SrTiO3_3 interfaces

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions.Comment: 4 figures in main text; 4 figures in the supplemen

Formation of the postmitotic nuclear envelope from extended ER cisternae precedes nuclear pore assembly

During mitosis, the nuclear envelope merges with the endoplasmic reticulum (ER), and nuclear pore complexes are disassembled. In a current model for reassembly after mitosis, the nuclear envelope forms by a reshaping of ER tubules. For the assembly of pores, two major models have been proposed. In the insertion model, nuclear pore complexes are embedded in the nuclear envelope after their formation. In the prepore model, nucleoporins assemble on the chromatin as an intermediate nuclear pore complex before nuclear envelope formation. Using live-cell imaging and electron microscope tomography, we find that the mitotic assembly of the nuclear envelope primarily originates from ER cisternae. Moreover, the nuclear pore complexes assemble only on the already formed nuclear envelope. Indeed, all the chromatin-associated Nup 107–160 complexes are in single units instead of assembled prepores. We therefore propose that the postmitotic nuclear envelope assembles directly from ER cisternae followed by membrane-dependent insertion of nuclear pore complexes

The Droplet State and the Compressibility Anomaly in Dilute 2D Electron Systems

We investigate the space distribution of carrier density and the compressibility of two-dimensional (2D) electron systems by using the local density approximation. The strong correlation is simulated by the local exchange and correlation energies. A slowly varied disorder potential is applied to simulate the disorder effect. We show that the compressibility anomaly observed in 2D systems which accompanies the metal-insulator transition can be attributed to the formation of the droplet state due to disorder effect at low carrier densities.Comment: 4 pages, 3 figure

Fate of the extended states in a vanishing magnetic field: the role of spins in strongly-interacting 2D electron systems

In non-interacting or weakly-interacting 2D electron systems, the energy of the extended states increases as the perpendicular magnetic field approaches zero: the extended states "float up" in energy, giving rise to an insulator. However, in those 2D systems where metallic conductivity has been recently observed in zero magnetic field, the energy of the extended states remains constant or even decreases as B -> 0, thus allowing conduction in the limit of zero temperature. Here we show that aligning the electrons' spins causes the extended states to once more "float up" in energy in the vanishing perpendicular magnetic field, as they do for non- or weakly-interacting electrons. The difference between extended states that float up (an insulator) or remain finite (a metal) is thus tied to the existence of the spins

Thermodynamic Signature of a Two-Dimensional Metal-Insulator Transition

We present a study of the compressibility, K, of a two-dimensional hole system which exhibits a metal-insulator phase transition at zero magnetic field. It has been observed that dK/dp changes sign at the critical density for the metal-insulator transition. Measurements also indicate that the insulating phase is incompressible for all values of B. Finally, we show how the phase transition evolves as the magnetic field is varied and construct a phase diagram in the density-magnetic field plane for this system.Comment: 4 pages, 4 figures, submitted to Physical Review Letters; version 1 is identical to version 2 but didn't compile properl

Nonlinear screening and percolative transition in a two-dimensional electron liquid

A novel variational method is proposed for calculating the percolation threshold, the real-space structure, and the thermodynamical compressibility of a disordered two-dimensional electron liquid. Its high accuracy is verified against prior numerical results and newly derived exact asymptotics. The inverse compressibility is shown to have a strongly asymmetric minimum at a density that is approximately the triple of the percolation threshold. This implies that the experimentally observed metal-insulator transition takes place well before the percolation point is reached.Comment: 4 pages, 2 figures. (v2) minor changes (v3) reference added (v4) few more references adde

Universal flow diagram for the magnetoconductance in disordered GaAs layers

The temperature driven flow lines of the diagonal and Hall magnetoconductance data (G_{xx},G_{xy}) are studied in heavily Si-doped, disordered GaAs layers with different thicknesses. The flow lines are quantitatively well described by a recent universal scaling theory developed for the case of duality symmetry. The separatrix G_{xy}=1 (in units e^2/h) separates an insulating state from a spin-degenerate quantum Hall effect (QHE) state. The merging into the insulator or the QHE state at low temperatures happens along a semicircle separatrix G_{xx}^2+(G_{xy}-1)^2=1 which is divided by an unstable fixed point at (G_{xx},G_{xy})=(1,1).Comment: 10 pages, 5 figures, submitted to Phys. Rev. Let