Resolution of Single Spin-Flips of a Single Proton

The spin magnetic moment of a single proton in a cryogenic Penning trap was coupled to the particle's axial motion with a superimposed magnetic bottle. Jumps in the oscillation frequency indicate spin-flips and were identified using a Bayesian analysis.Comment: accepted for publication by Phys. Rev. Lett., submitted 6.June.201

Measuring the proton selectivity of graphene membranes

By systematically studying the proton selectivity of free-standing graphene membranes in aqueous solutions we demonstrate that protons are transported by passing through defects. We study the current-voltage characteristics of single-layer graphene grown by chemical vapour deposition (CVD) when a concentration gradient of HCl exists across it. Our measurements can unambiguously determine that H+ ions are responsible for the selective part of the ionic current. By comparing the observed reversal potentials with positive and negative controls we demonstrate that the as-grown graphene is only weakly selective for protons. We use atomic layer deposition to block most of the defects in our CVD graphene. Our results show that a reduction in defect size decreases the ionic current but increases proton selectivity.This is the author accepted manuscript. The final version is available from AIP via http://dx.doi.org/10.1063/1.493633

Demonstration of the Double Penning Trap Technique with a Single Proton

Spin flips of a single proton were driven in a Penning trap with a homogeneous magnetic field. For the spin-state analysis the proton was transported into a second Penning trap with a superimposed magnetic bottle, and the continuous Stern-Gerlach effect was applied. This first demonstration of the double Penning trap technique with a single proton suggests that the antiproton magnetic moment measurement can potentially be improved by three orders of magnitude or more

Towards a general growth model for graphene CVD on transition metal catalysts.

The chemical vapour deposition (CVD) of graphene on three polycrystalline transition metal catalysts, Co, Ni and Cu, is systematically compared and a first-order growth model is proposed which can serve as a reference to optimize graphene growth on any elemental or alloy catalyst system. Simple thermodynamic considerations of carbon solubility are insufficient to capture even basic growth behaviour on these most commonly used catalyst materials, and it is shown that kinetic aspects such as carbon permeation have to be taken into account. Key CVD process parameters are discussed in this context and the results are anticipated to be highly useful for the design of future strategies for integrated graphene manufacture.We wish to thank Dr. M.-B. Martin for careful reading of the manuscript. A.C.V. acknowledges the Conacyt Cambridge Scholarship and Roberto Rocca Fellowship. R.S.W. acknowledges a Research Fellowship from St. John’s College, Cambridge and a Marie Skłodowska-Curie Individual Fellowship (Global) under grant ARTIST (no. 656870) from the European Union’s Horizon 2020 research and innovation programme. S.C. acknowledges funding from EPSRC (Doctoral training award). S.H. acknowledges funding from ERC grant InsituNANO (No. 279342) and EPSRC under grant GRAPHTED (Ref. EP/K016636/1).This is the final version of the article. It first appeared from the Royal Society of Chemistry via http://dx.doi.org/10.1039/C5NR06873

Magnetic Field tuning of low energy spin dynamics in the single-atomic magnet Li2_2(Li1−x_{1-x}Fex_x)N

We present a systematic 57Fe-Moessbauer study on highly diluted Fe centers in Li2(Li1-xFex)N single-crystals as a function of temperature and magnetic field applied transverse and longitudinal with respect to the single-ion anisotropy axis. Below 30 K the Fe centers exhibit a giant magnetic hyperfine field of E_A = 70.25(2)T parallel to the axis of strongest electric field gradient Vzz = -154.0(1) V/A2. Fluctuations of the magnetic hyperfine field are observed between 50K and 300K and described by the Blume two-level relaxation model. From the temperature dependence of the uctuation rate an Orbach spin-lattice relaxation process is deduced. An Arrhenius analysis yields a single thermal activation barrier of E_A = 570(6)K and an attempt frequency nu_0 = 309(10) GHz. Moessbauer spectroscopy studies with applied transverse magnetic fields up to 5T reveal a large increase of the uctuation rate by more than one order of magnitude. In longitudinal magnetic fields a splitting of the uctuation rate into two branches is observed consistent with a Zeeman induced modifcation of the energy levels. The experimental observations are qualitatively reproduced by a single-ion effective spin Hamiltonian analysis assuming a Fe1+ d7 charge state with unquenched orbital moment and a J = 7=2 ground state. It is demonstrated that a weak axial single-ion anisotropy D of the order of a few Kelvin can cause a two orders of magnitude larger energy barrier for longitudinal spin fluctuations.Comment: 19 pages, 17 figures

Transfer-free graphene passivation of sub 100 nm thin Pt and Pt–Cu electrodes for memristive devices

Memristive switches are among the most promising building blocks for future neuromorphic computing. These devices are based on a complex interplay of redox reactions on the nanoscale. Nanoionic phenomena enable non-linear and low-power resistance transition in ultra-short programming times. However, when not controlled, the same electrochemical reactions can result in device degradation and instability over time. Two-dimensional barriers have been suggested to precisely manipulate the nanoionic processes. But fabrication-friendly integration of these materials in memristive devices is challenging.Here we report on a novel process for graphene passivation of thin platinum and platinum/copper electrodes. We also studied the level of defects of graphene after deposition of selected oxides that are relevant for memristive switching

Hybrid graphene nematic liquid crystal light scattering device.

A hybrid graphene nematic liquid crystal (LC) light scattering device is presented. This device exploits the inherent poly-crystallinity of chemical vapour deposited (CVD) graphene films to induce directional anchoring and formation of LC multi-domains. This thereby enables efficient light scattering without the need for crossed polarisers or separate alignment layers/additives. The hybrid LC device exhibits switching thresholds at very low electric fields (< 1 V μm(-1)) and repeatable, hysteresis free characteristics. This exploitation of LC alignment effects on CVD graphene films enables a new generation of highly efficient nematic LC scattering displays as well as many other possible applications.Funding from the EPSRC (Grant No. EP/K016636/1, GRAPHTED) is acknowledged. P.R.K. acknowledges funding from Cambridge Commonwealth Trust (CCT) and the Lindemann Trust Fellowship. A.A.K would like to thank the Higher Education of Pakistan (HEC) and the CCT for financial support. A.C.V. acknowledges funding from the Cambridge Conacyt Scholarship and the Roberto Rocca Fellowship. A.K. would like to thank the Luys Educational Foundation and Hovnanian Foundation for scholarships.This is the author accepted manuscript. The final version is available from the Royal Society of Chemistry via http://dx.doi.org/10.1039/c5nr04094

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

The transfer of chemical vapour deposited (CVD) graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to fully remove and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.We acknowledge funding from EPSRC (Grant No. EP/K016636/1, GRAPHTED) and ERC (Grant No. 279342, InsituNANO). ACV acknowledges the Conacyt Cambridge Scholarship and Roberto Rocca Fellowship. JAA-W acknowledges the support of his Research Fellowships from the Royal Commission for the Exhibition of 1851 and Churchill College, Cambridge. RSW acknowledges a Research Fellowship from St. John's College, Cambridge and a Marie Skłodowska-Curie Individual Fellowship (Global) under grant ARTIST (no. 656870) from the European Union's Horizon 2020 research and innovation programme