Spin resonance of 2D electrons in a large-area silicon MOSFET

We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.Comment: 7 pages, 3 figures, submitted to Physica E special edition for EPS2DS-1

Coupled channel description of 16O+142,144,146Nd scattering around the Coulomb barrier using a complex microscopic potential

Angular distributions of elastic scattering and inelastic scattering from 2+ 1 state are measured for 16O+142,144,146Nd systems at several energies in the vicinity of the Coulomb barrier. The angular distributions are systematically analyzed in coupled channel framework. Renormalized double folded real optical and coupling potentials with DDM3Y interaction have been used in the calculation. Relevant nuclear densities needed to generate the potentials are derived from shell model wavefunctions. A truncated shell model calculation has been performed and the calculated energy levels are compared with the experimental ones. To simulate the absorption, a 'hybrid' approach is adopted. The contribution to the imaginary potential of couplings to the inelastic channels, other than the 2+ 1 target excitation channel, is calculated in the Feshbach formalism. This calculated imaginary potential along with a short ranged volume Woods-Saxon potential to simulate the absorption in fusion channel reproduces the angular distributions for 16O+146Nd quite well. But for 16O+142,144Nd systems additional surface absorption is found to be necessary to fit the angular distribution data. The variations of this additional absorption term with incident energy and the mass of the target are explored. © 2003 Elsevier Science B.V. All rights reserved

Shape deformation of embedded metal nanoparticles by swift heavy ion irradiation

an invited paper of SHIM 2008Swift heavy ions (SHI) induce high densities of electronic excitations in narrow cylindrical volumes around their path. These excitations have been used to manipulate the size and shape of noble metal nanoparticles embedded in silica matrix. Films containing noble metal nanoparticles were prepared by magnetron co-sputtering techniques. SHI irradiation of films resulted in the formation of prolate Ag nanoparticles with major axis along the ion beam direction. It has been observed that the nanoparticles smaller than the track size dissolve and other grow at their expense, while the nanoparticles larger than track size show deformation with major axis along the ion beam direction. The aspect ratio of elongated nanoparticles is found to be the function of electronic energy loss and ion fluence. Present report will focus on the role of size and volume fraction on the shape deformation of noble metal nanoparticles by electronic excitation induced by SHI irradiation. The detailed results concerning irradiation effects in silica-metal composites for dissolution, growth and shape deformation will be discussed in the framework of thermal spike model

Dielectric response of makrofol-KG polycarbonate irradiated with 145 MeV Ne6+ and 100 MeV Si8+ ions

The passage of heavy ions in a track detector polymeric material produces lattice deformations. These deformations may be in the form of latent tracks or may vanish by self annealing in time. Heavy ion irradiation produces modifications in polymers in their relevant electrical, chemical and optical properties in the form of rearrangement of bonding, cross-linking, chain scission, formation of carbon rich clusters and changes in dielectric properties etc. Modification depends on the ion, its energy and fluence and the polymeric material. In the present work, a study of the dielectric response of pristine and heavy ion irradiated Makrofol-KG polycarbonate is carried out. 40 μm thick Makrofol-KG polycarbonate films were irradiated to various fluences with Si8+ ions of 100 MeV energy from Pelletron at Inter University Accelerator Centre (IUAC), New Delhi and Ne6+ ions of 145 MeV from Variable Energy Cyclotron Centre, Kolkata. On irradiation with heavy ions dielectric constant ( ) decreases with frequency where increases with fluence for both the ions. Variation of loss factor (tan ) with frequency for pristine and irradiated with Si ions reveals that tan increases as the frequency increases. Tan also increases with fluence. While Ne irradiated samples tan shows slight variation with frequency as well as with fluence. Tan has positive values indicating the dominance of inductive behavior.Author Affiliation: Rajesh Kumar, S Asad Ali, Udayan De, D K Avasthi and Rajendra Prasad 1.Department of Applied Physics, Z H College of Engineering & Technology, Aligarh Muslim University, Aligarh-202 002, Uttar Pradesh, India 2.Variable Energy Cyclotron Centre, 1/AF, Bidhan Nagar, Kolkata-700 064, India 3.Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110 067, India E-mail : [email protected] of Applied Physics, Z H College of Engineering & Technology, Aligarh Muslim University, Aligarh-202 002, Uttar Pradesh, India Variable Energy Cyclotron Centre, 1/AF, Bidhan Nagar, Kolkata-700 064, India Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110 067, Indi

Wide-angle α-t coincidence measurement in the breakup of 7Li on 27Al

We have performed wide-angle in-plane coincidence measurements of the alpha particles and tritons emitted in the 48-MeV 7Li projectile breakup reaction on 27Al. The data have been analyzed using the post-form distorted-wave Born-approximation (DWBA) theory of breakup reactions where Coulomb and nuclear breakup as well as their interference terms are included. The theory is able to provide a good description of the experimental data particularly at large relative angles between the fragments. The interference between the Coulomb and nuclear breakup modes is found to be significant

A microscopic complex potential description of elastic, inelastic cross section in the Coulomb nuclear interference region in the 28Si on 28Si system

Elastic and inelastic angular distribution and excitation functions were measured for the 28Si + 28Si system in the vicinity of the Coulomb barrier. While the elastic data could be described very well by using fully microscopic complex potential, the inelastic cross sections were found to be more sensitive to small variations in the potential. In particular the Coulomb nuclear interference dip observed in the inelastic excitation functions could not be fitted satisfactorily with calculation. Inclusion of an energy dependent term of Gaussian shape to the associated matrix element with the reorientation coupling in the phenomenological calculations leads to a better fit the inelastic excitation functions. © 1998 Elsevier Science B.V

Inclusive and exclusive measurements in the projectile breakup of 7Li

The inclusive and exclusive measurements were carried out for 7Li projectile breakup on 27Al target at 48 MeV. In the inclusive data we have observed a broad peak around the beam velocity for alphas and tritons. The exclusive data for alpha-triton coincidences show good agreement with the post-form DWBA theory of breakup reactions

Study of optical band gap and carbon cluster sizes formed in 100 MeV Si8+ and 145 MeV Ne6+ ions irradiated polypropylene polymer

A wide variety of material modifications in polymers have been studied by using ion irradiation techniques. Extensive research has focused on to Swift Heavy Ions (MeV's energy), probably because of good controllability and the large penetration length in polymers. High energy ion irradiation tends to damage polymers significantly by electronic excitation and ionization. It may result into the creation of latent tracks and can also cause formation of radicals such as ablation, sputtering, chain scission and intermolecular cross-linking, creation of triple bonds and unsaturated bonds and loss volatile fragments. Polypropylene polymer films of thickness 50 μm were irradiated to the fluences of 1 × 1010, 3 × 1010, 1 × 1011, 3 × 1011, 6 × 1011 and 1 × 1012 ions/cm2 with Si8+ ions of 100 MeV energy from Pelletron accelerator at Inter University Accelerator Centre (IUAC), New Delhi and Ne6+ ions of 145 MeV to the fluences of 108, 1010, 1011, 1012 and 1013 ions/cm3 from Variable Energy Cyclotron Centre, Kolkata. Optical modifications were characterized by UV towards the red end of the spectrum with the increase of the fluence. Value of optical band gap Eg shows a decreasing trend with ion fluence irradiated with both kinds of ions. Cluster size N, the number of carbon atoms per conjugation length increases with increasing ion dose. Cluster size also increases with the increase of electronic stopping power.Rajesh Kumar1*, S Asad Ali1, A. H. Naqvi1, H. S. Virk2, Udayan De3, D K Avasthi4 and Rajendra Prasad1 1Department of Applied Physics, Z. H. College of Engineering & Technology, Aligarh Muslim University, Aligarh-202 002, Uttar Pradesh, India 2360 Sector-71, SAS Nagar (Mohali), Chandigarh-160 071, Punjab, India 3Variable Energy Cyclotron Centre, 1/AF, Bidhan Nagar, Kolkata-700 064, India 4Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110 067, India E-mail : [email protected] of Applied Physics, Z. H. College of Engineering & Technology, Aligarh Muslim University, Aligarh-202 002, Uttar Pradesh, India 2360 Sector-71, SAS Nagar (Mohali), Chandigarh-160 071, Punjab, India Variable Energy Cyclotron Centre, 1/AF, Bidhan Nagar, Kolkata-700 064, India Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110 067, Indi