Evolution of defect densities with height in a HPMC-SI ingot

publishedVersio

The Effect of Pull Speed and Heat Treatment on Thermal Donors in Czhocralski Silicon

publishedVersio

The Impact of Different Hydrogen Configurations on Light- and Elevated-Temperature- Induced Degradation

publishedVersio

Evolution of the light sensitive defects in high performance multicrystalline silicon wafers

acceptedVersio

Minority carrier lifetimes in Cz-Si wafers with intentional V-I transitions

publishedVersio

Lifetime spectroscopy with high spatial resolution based on temperature- and injection dependent photoluminescence imaging

acceptedVersio

Investigating antireflection properties of hybrid silicon nanostructures comprising rod-like nanopores and nano-textured surface

In the present work, we have fabricated hybrid silicon (Si) nanostructures comprising vertical rod-like nanopores and nano-textured surface by metal assisted chemical etching (MACE) method at room temperature. The as-received p-type Upgraded Metallurgical grade (UMG) Si wafers were chemical polished, prior to investigating the etching effects at the metal nanoparticle semiconductor interface. The influence of metal silver nanoparticle (AgNPs) concentration on the formation of hybrid nanostructures were studied systematically. Depending on the surface morphology, the hybrid structures exhibited constant 10% average reflectance in the UV–Visible spectral region or average 7.5% reflectance in range of 200–400 nmsubmittedVersio

Temperature dependent photoluminescence imaging calibrated by photoconductance measurements

publishedVersio

Identifying recombination parameters by injection-dependent lifetime spectroscopy on mc-silicon based on photoluminescence imaging

publishedVersio

Minority carrier lifetimes in Cz-Si wafers with intentional V-I transitions

A p-type Cz-Si crystal has been pulled with varying pulling speed in order to produce wafers containing two distinct regions; A region with silicon self-interstitial defects, and a vacancy dominated region. Band-to-band photoluminescence imaging has been used to study the minority charge carrier lifetimes in these wafers after different processing steps. Despite the different defects found in the different regions of the wafers carrier lifetimes appear to be uniform across the entire wafers, both for ungettered and gettered samples. Only after an oxidation process at 1100 °C oxygen related ring patterns become visible. It is, however, difficult to identify the band structure of the transition area between the regions among all the striations in the crystal