Stress-Induced Delamination Of Through Silicon Via Structures

Continuous scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effect of thermal stresses on interfacial reliability of TSV structures. First, the three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results obtained by finite element analysis (FEA). Results from the stress analysis suggest interfacial delamination as a potential failure mechanism for the TSV structure. Analytical solutions for various TSV designs are then obtained for the steady-state energy release rate as an upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. Based on these results, the effects of TSV designs and via material properties on the interfacial reliability are elucidated. Finally, potential failure mechanisms for TSV pop-up due to interfacial fracture are discussed.Aerospace Engineerin

Medium effects of magnetic moments of baryons on neutron stars under strong magnetic fields

We investigate medium effects due to density-dependent magnetic moments of baryons on neutron stars under strong magnetic fields. If we allow the variation of anomalous magnetic moments (AMMs) of baryons in dense matter under strong magnetic fields, AMMs of nucleons are enhanced to be larger than those of hyperons. The enhancement naturally affects the chemical potentials of baryons to be large and leads to the increase of a proton fraction. Consequently, it causes the suppression of hyperons, resulting in the stiffness of the equation of state. Under the presumed strong magnetic fields, we evaluate relevant particles' population, the equation of state and the maximum masses of neutron stars by including density-dependent AMMs and compare them with those obtained from AMMs in free space

Thermomechanical Reliability Challenges For 3D Interconnects With Through-Silicon Vias

Continual scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently threedimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Among others, thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effects of thermally induced stresses on interfacial reliability of TSV structures. First, three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results From finite element analysis (FEA). The stress analysis suggests interfacial delamination as a potential failure mechanism for the TSV structure. An analytical solution is then obtained for the steady-state energy release rate as the upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. With these results, the effects of the TSV dimensions (e.g., via diameter and wafer thickness) on the interfacial reliability are elucidated. Furthermore, the effects of via material properties are discussed.Aerospace Engineerin

Characterization Of Thermal Stresses And Plasticity In Through-Silicon Via Structures For Three-Dimensional Integration

Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause reliability problems. In this study, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress characteristics were compared to that of a Cu thin film structure. The thermo-mechanical characteristics of the Cu TSV structure were correlated to microstructure evolution during thermal cycling and the local plasticity in Cu in a triaxial stress state. These findings were confirmed by microstructure analysis of the Cu vias and finite element analysis (FEA) of the stress characteristics. In addition, the local plasticity and deformation in and around individual TSVs were measured by synchrotron x-ray microdiffraction to supplement the wafer curvature measurements. The importance and implication of the local plasticity and residual stress on TSV reliabilities are discussed for TSV extrusion and device keep-out zone (KOZ).Microelectronics Research Cente

Thermomechanical Characterization And Modeling For TSV Structures

Continual scaling of devices and on-chip wiring has brought significant challenges for materials and processes beyond the 32-nm technology node in microelectronics. Recently, three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an effective solution to meet the future technology requirements. Among others, thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper presents experimental measurements of the thermal stresses in TSV structures and analyses of interfacial reliability. The micro-Raman measurements were made to characterize the local distribution of the near-surface stresses in Si around TSVs. On the other hand, the precision wafer curvature technique was employed to measure the average stress and deformation in the TSV structures subject to thermal cycling. To understand the elastic and plastic behavior of TSVs, the microstructural evolution of the Cu vias was analyzed using focused ion beam (FIB) and electron backscattering diffraction (EBSD) techniques. Furthermore, the impact of thermal stresses on interfacial reliability of TSV structures was investigated by a shear-lag cohesive zone model that predicts the critical temperatures and critical via diameters.Microelectronics Research Cente

On the role of a new type of correlated disorder in extended electronic states in the Thue-Morse lattice

A new type of correlated disorder is shown to be responsible for the appearance of extended electronic states in one-dimensional aperiodic systems like the Thue-Morse lattice. Our analysis leads to an understanding of the underlying reason for the extended states in this system, for which only numerical evidence is available in the literature so far. The present work also sheds light on the restrictive conditions under which the extended states are supported by this lattice.Comment: 11 pages, LaTeX V2.09, 1 figure (available on request), to appear in Physical Review Letter

Hydrodynamics in 1+1 dimensions with gravitational anomalies

The constraints imposed on hydrodynamics by the structure of gauge and gravitational anomalies are studied in two dimensions. By explicit integration of the consistent gravitational anomaly, we derive the equilibrium partition function at second derivative order. This partition function is then used to compute the parity-violating part of the covariant energy-momentum tensor and the transport coefficients.Comment: 9 pages, JHEP format.v2; added comments and references, matching published versio

Magnetization Jump in a Model for Flux Lattice Melting at Low Magnetic Fields

Using a frustrated XY model on a lattice with open boundary conditions, we numerically study the magnetization change near a flux lattice melting transition at low fields. In both two and three dimensions, we find that the melting transition is followed at a higher temperature by the onset of large dissipation associated with the zero-field XY transition. It is characterized by the proliferation of vortex-antivortex pairs (in 2D) or vortex loops (in 3D). At the upper transition, there is a sharp increase in magnetization, in qualitative agreement with recent local Hall probe experiments.Comment: updated figures and texts. new movies available at http://www.physics.ohio-state.edu:80/~ryu/jj.html. Accepted for publication in Physical Review Letter