15,266 research outputs found
Neutron Stars with Bose-Einstein Condensation of Antikaons as MIT Bags
We investigate the properties of an antikaon in medium, regarding itas a MIT
bag. We first construct the MIT bag model for a kaon with and
in order to describe the interaction of-quarks in hyperonic matter in the
framework of the modifiedquark-meson coupling model. The coupling constant
in the density-dependent bag constant is treated
as afree parameter to reproduce the optical potential of a kaon in asymmetric
matter and all other couplings are determined by usingSU(6) symmetry and the
quark counting rule. With various values ofthe kaon potential, we calculate the
effective mass of a kaon inmedium to compare it with that of a point-like kaon.
We thencalculate the population of octet baryons, leptons and and
theequation of state for neutron star matter. The results show thatkaon
condensation in hyperonic matter is sensitive to the -quarkinteraction and
also to the way of treating the kaon. The mass andthe radius of a neutron star
are obtained by solving theTolmann-Oppenheimer-Volkoff equation.Comment: 14 figure
Holographic classification of Topological Insulators and its 8-fold periodicity
Using generic properties of Clifford algebras in any spatial dimension, we
explicitly classify Dirac hamiltonians with zero modes protected by the
discrete symmetries of time-reversal, particle-hole symmetry, and chirality.
Assuming the boundary states of topological insulators are Dirac fermions, we
thereby holographically reproduce the Periodic Table of topological insulators
found by Kitaev and Ryu. et. al, without using topological invariants nor
K-theory. In addition we find candidate Z_2 topological insulators in classes
AI, AII in dimensions 0,4 mod 8 and in classes C, D in dimensions 2,6 mod 8.Comment: 19 pages, 4 Table
On the role of a new type of correlated disorder in extended electronic states in the Thue-Morse lattice
A new type of correlated disorder is shown to be responsible for the
appearance of extended electronic states in one-dimensional aperiodic systems
like the Thue-Morse lattice. Our analysis leads to an understanding of the
underlying reason for the extended states in this system, for which only
numerical evidence is available in the literature so far. The present work also
sheds light on the restrictive conditions under which the extended states are
supported by this lattice.Comment: 11 pages, LaTeX V2.09, 1 figure (available on request), to appear in
Physical Review Letter
Stress-Induced Delamination Of Through Silicon Via Structures
Continuous scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effect of thermal stresses on interfacial reliability of TSV structures. First, the three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results obtained by finite element analysis (FEA). Results from the stress analysis suggest interfacial delamination as a potential failure mechanism for the TSV structure. Analytical solutions for various TSV designs are then obtained for the steady-state energy release rate as an upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. Based on these results, the effects of TSV designs and via material properties on the interfacial reliability are elucidated. Finally, potential failure mechanisms for TSV pop-up due to interfacial fracture are discussed.Aerospace Engineerin
Phonon emission and arrival times of electrons from a single-electron source
In recent charge-pump experiments, single electrons are injected into quantum Hall edge channels at energies significantly above the Fermi level. We consider here the relaxation of these hot edge-channel electrons through longitudinal-optical-phonon emission. Our results show that the probability for an electron in the outermost edge channel to emit one or more phonons en route to a detector some microns distant along the edge channel suffers a double-exponential suppression with increasing magnetic field. This explains recent experimental observations. We also describe how the shape of the arrival-time distribution of electrons at the detector reflects the velocities of the electronic states post phonon emission. We show how this can give rise to pronounced oscillations in the arrival-time-distribution width as a function of magnetic field or electron energy
Picosecond coherent electron motion in a silicon single-electron source
Understanding ultrafast coherent electron dynamics is necessary for
application of a single-electron source to metrological standards, quantum
information processing, including electron quantum optics, and quantum sensing.
While the dynamics of an electron emitted from the source has been extensively
studied, there is as yet no study of the dynamics inside the source. This is
because the speed of the internal dynamics is typically higher than 100 GHz,
beyond state-of-the-art experimental bandwidth. Here, we theoretically and
experimentally demonstrate that the internal dynamics in a silicon
singleelectron source comprising a dynamic quantum dot can be detected,
utilising a resonant level with which the dynamics is read out as
gate-dependent current oscillations. Our experimental observation and
simulation with realistic parameters show that an electron wave packet
spatially oscillates quantum-coherently at 200 GHz inside the source.
Our results will lead to a protocol for detecting such fast dynamics in a
cavity and offer a means of engineering electron wave packets. This could allow
high-accuracy current sources, high-resolution and high-speed
electromagnetic-field sensing, and high-fidelity initialisation of flying
qubits
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Thermomechanical Reliability Challenges For 3D Interconnects With Through-Silicon Vias
Continual scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently threedimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Among others, thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effects of thermally induced stresses on interfacial reliability of TSV structures. First, three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results From finite element analysis (FEA). The stress analysis suggests interfacial delamination as a potential failure mechanism for the TSV structure. An analytical solution is then obtained for the steady-state energy release rate as the upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. With these results, the effects of the TSV dimensions (e.g., via diameter and wafer thickness) on the interfacial reliability are elucidated. Furthermore, the effects of via material properties are discussed.Aerospace Engineerin
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