66 research outputs found
Specific features of g 4.3 EPR line behavior in magnetic nanogranular composites
Films of metal-insulator nanogranular composites MD with
different composition and percentage of metal and dielectric phases (M = Fe,
Co, CoFeB; D = AlO, SiO, LiNbO; x 15-70 at.%) are
investigated by magnetic resonance in a wide range of frequencies (f = 7-37
GHz) and temperatures (T = 4.2-360 K). In addition to the usual ferromagnetic
resonance signal from an array of nanogranules, the experimental spectra
contain an additional absorption peak, which we associate with the electron
paramagnetic resonance (EPR) of Fe and Co ions dispersed in the insulating
space between the granules. In contrast to the traditional EPR of Fe and Co
ions in weakly doped non-magnetic matrices, the observed peak demonstrates a
number of unusual properties, which we explain by the presence of magnetic
interactions between ions and granules
Pecularities of Hall effect in GaAs/{\delta}<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content
Transport properties of GaAs/{\delta}/GaAs/In\timesGa1-\timesAs/GaAs
structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and
Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content,
are studied. In these structures DL is separated from QW by GaAs spacer with
the thickness ds = 2-5 nm. All structures possess a dielectric character of
conductivity and demonstrate a maximum in the resistance temperature dependence
Rxx(T) at the temperature {\approx} 46K which is usually associated with the
Curie temperature Tc of ferromagnetic (FM) transition in DL. However, it is
found that the Hall effect concentration of holes pH in QW does not decrease
below TC as one ordinary expects in similar systems. On the contrary, the
dependence pH(T) experiences a minimum at T = 80-100 K depending on the spacer
thickness, then increases at low temperatures more strongly than ds is smaller
and reaches a giant value pH = (1-2)\cdot10^13 cm^(-2). Obtained results are
interpreted in the terms of magnetic proximity effect of DL on QW, leading to
induce spin polarization of the holes in QW. Strong structural and magnetic
disorder in DL and QW, leading to the phase segregation in them is taken into
consideration. The high pH value is explained as a result of compensation of
the positive sign normal Hall effect component by the negative sign anomalous
Hall effect component.Comment: 19 pages, 6 figure
Stability of quantized conductance levels in memristors with copper filaments: toward understanding the mechanisms of resistive switching
Memristors are among the most promising elements for modern microelectronics,
having unique properties such as quasi-continuous change of conductance and
long-term storage of resistive states. However, identifying the physical
mechanisms of resistive switching and evolution of conductive filaments in such
structures still remains a major challenge. In this work, aiming at a better
understanding of these phenomena, we experimentally investigate an unusual
effect of enhanced conductive filament stability in memristors with copper
filaments under the applied voltage and present a simplified theoretical model
of the effect of a quantum current through a filament on its shape. Our
semi-quantitative, continuous model predicts, indeed, that for a thin filament,
the "quantum pressure" exerted on its walls by the recoil of charge carriers
can well compete with the surface tension and crucially affect the evolution of
the filament profile at the voltages around 1V. At lower voltages, the quantum
pressure is expected to provide extra stability to the filaments supporting
quantized conductance, which we also reveal experimentally using a novel
methodology focusing on retention statistics. Our results indicate that the
recoil effects could potentially be important for resistive switching in
memristive devices with metallic filaments and that taking them into account in
rational design of memristors could help achieve their better retention and
plasticity characteristics.Comment: version accepted for publication in Phys. Rev. Applied, including
improved statistic
Structural and transport properties of GaAs/delta<Mn>/GaAs/InxGa1-xAs/GaAs quantum wells
We report results of investigations of structural and transport properties of
GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn
layer, separated from the QW by a 3 nm thick spacer. The structure has hole
mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher
than in known ferromagnetic two-dimensional structures. The analysis of the
electro-physical properties of these systems is based on detailed study of
their structure by means of high-resolution X-ray diffractometry and
glancing-incidence reflection, which allow us to restore the depth profiles of
structural characteristics of the QWs and thin Mn containing layers. These
investigations show absence of Mn atoms inside the QWs. The quality of the
structures was also characterized by photoluminescence spectra from the QWs.
Transport properties reveal features inherent to ferromagnetic systems: a
specific maximum in the temperature dependence of the resistance and the
anomalous Hall effect (AHE) observed in samples with both "metallic" and
activated types of conductivity up to ~100 K. AHE is most pronounced in the
temperature range where the resistance maximum is observed, and decreases with
decreasing temperature. The results are discussed in terms of interaction of
2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations
related to random distribution of Mn atoms. The AHE values are compared with
calculations taking into account its "intrinsic" mechanism in ferromagnetic
systems.Comment: 15 pages, 9 figure
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