Investigation of effects of deposition parameters on composition, microstructure,a nd emission of RF sputtered SrS:Eu thin film phosphors

There has been little systematic study of the cause of dead (inactive) layers in II-VI phosphors used in thin film electroluminescent devices. This paper discusses preparation and characterization of rf sputter deposited Eu-doped Sr sulfide (SrS:Eu) thin films for use in a study to determine the cause of the dead layer. (The dead layer`s behavior is likely influenced by thin film composition, crystallinity, and microstructure.) We have deposited SrS:Eu thin films in a repeatable, consistent manner and have characterized properties such as composition, crystallinity, and microstructure as well as photoluminescent (PL) and electroluminescent behavior. The composition was determined using Rutherford backscattering spectrometry and electron microprobe analysis. XRD was used to assess crystalline orientation and grain size, SEM to image thin film microstructure. Measuring the PL decay after subnanosecond laser excitation in the lowest absorption band of the dopant allowed direct measurement of the dopant luminescence efficiency

Effects Of Low Substrate Temperature And Ion Assisted Deposition On Composition, Optical Properties, And Stress Of Zns Thin Films

ZnS thin films were deposited with and without ion assisted deposition onto substrates held at temperatures ranging from -120 to 50°C. Effects on chemical and crystalline composition, film microstructure, refractive index, stress, and waveguide losses were investigated. We observed that minimum stress and minimum losses occurred at the same deposition temperature (-50°C) in ZnS films, which also corresponded to a quenching of crystallinity. © 1989, Optical Society of America

Deposition and Characterization of Highly Oriented Mg(3)(VO(4))(2) Thin Film Catalyst

Magnesium vanadates are potentially important catalytic materials for the conversion of alkanes to alkenes via oxidative dehydrogenation. However, little is known about the active sites at which the catalytic reactions take place. It may be possible to obtain a significant increase in the catalytic efficiency if the effects of certain material properties on the surface reactions could be quantified and optimized through the use of appropriate preparation techniques. Given that surface reactivity is often dependent upon surface structure and that the atomic level structure of the active sites in these catalysts is virtually unknown, we desire thin film samples consisting of a single magnesium vanadate phase and a well defined crystallographic orientation in order to reduce complexity and simplify the study of active sites. We report on the use of reactive RF sputter deposition to fabricate very highly oriented, stoichiometric Mg{sub 3}(VO{sub 4}){sub 2} thin films for use in these surface analysis studies. Deposition of samples onto amorphous substrates resulted in very poor crystallinity. However, deposition of Mg{sub 3}(VO{sub 4}){sub 2} onto well-oriented, lattice-matched thin film ''seed'' layers such as Ti(0001), Au(111), or Pt(111) resulted in very strong preferential (042) crystallographic orientation (pseudo-hexagonal oxygen planes parallel to the substrate). This strong preferential growth of the Mg{sub 3}VO{sub 4}{sub 2} suggests epitaxial (single-crystal) growth of this mixed metal oxide on the underlying metal seed layer. The effects of the seed layer material, deposition temperature, and post-deposition reactive treatments on thin film properties such as stoichiometry, crystallographic orientation, and chemical interactions will be discussed

Chemical solution deposition of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films for non-volatile memory applications

SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films have received considerable attention for use as non-volatile memory elements. The authors have developed a process to prepare SBT films with good ferroelectric properties at low temperatures. In this paper, they will present strategies used to optimize the properties of the films including film composition, the nature of the substrate (or bottom electrode) used, and the thermal processing cycle. Under appropriate conditions, {approximately} 1,700 {angstrom} films can be prepared which have a large switchable polarization (2P{sub r} > 10{micro}C/cm{sup 2}), and an operating voltage {le} 2.0 V