There has been little systematic study of the cause of dead (inactive) layers in II-VI phosphors used in thin film electroluminescent devices. This paper discusses preparation and characterization of rf sputter deposited Eu-doped Sr sulfide (SrS:Eu) thin films for use in a study to determine the cause of the dead layer. (The dead layer`s behavior is likely influenced by thin film composition, crystallinity, and microstructure.) We have deposited SrS:Eu thin films in a repeatable, consistent manner and have characterized properties such as composition, crystallinity, and microstructure as well as photoluminescent (PL) and electroluminescent behavior. The composition was determined using Rutherford backscattering spectrometry and electron microprobe analysis. XRD was used to assess crystalline orientation and grain size, SEM to image thin film microstructure. Measuring the PL decay after subnanosecond laser excitation in the lowest absorption band of the dopant allowed direct measurement of the dopant luminescence efficiency
