Strong Electron-Phonon Interaction and Colossal Magnetoresistance in EuTiO3_3

At low temperatures, EuTiO$_3$ system has very large resistivities and exhibits colossal magnetoresistance. Based on a first principle calculation and the dynamical mean-field theory for small polaron we have calculated the transport properties of EuTiO$_3$. It is found that due to electron-phonon interaction the conduction band may form a tiny subband which is close to the Fermi level. The tiny subband is responsible for the large resistivity. Besides, EuTiO$_3$ is a weak antiferromagnetic material and its magnetization would slightly shift the subband via exchange interaction between conduction electrons and magnetic atoms. Since the subband is close to the Fermi level, a slight shift of its position gives colossal magnetoresistance.Comment: 6 pages, 5 figure

Large adiabatic temperature and magnetic entropy changes in EuTiO3

We have investigated the magnetocaloric effect in single and polycrystalline samples of quantum paraelectric EuTiO3 by magnetization and heat capacity measurements. Single crystalline EuTiO3 shows antiferromagnetic ordering due to Eu2+ magnetic moments below TN = 5.6 K. This compound shows a giant magnetocaloric effect around its Neel temperature. The isothermal magnetic entropy change is 49 Jkg-1K-1, the adiabatic temperature change is 21 K and the refrigeration capacity is 500 JKg-1 for a field change of 7 T at TN. The single crystal and polycrystalline samples show similar values of the magnetic entropy change and adiabatic temperature changes. The large magnetocaloric effect is due to suppression of the spin entropy associated with localized 4f moment of Eu2+ ions. The giant magnetocaloric effect together with negligible hysteresis, suggest that EuTiO3 could be a potential material for magnetic refrigeration below 20 K.Comment: 12 pages, 4 figure

MAGNETOCALORIC, MAGNETORESISTANCE AND MAGNETODIELECTRIC EFFECTS IN UNDOPED AND DOPED EuTiO3

Ph.DDOCTOR OF PHILOSOPH

Unconventional quantum oscillations and evidence of non-trivial electronic states in quasi-two-dimensional electron system at complex oxide interfaces

The simultaneous occurrence of electric-field controlled superconductivity and spin-orbit interaction makes two-dimensional electron systems (2DES) constructed from perovskite transition metal oxides promising candidates for the next generation of spintronics and quantum computing. It is, however, essential to understand the electronic bands thoroughly and verify the predicted electronic states experimentally in these 2DES to advance technological applications. Here, we present novel insights into the electronic states of the 2DES at oxide interfaces through comprehensive investigations of Shubnikov-de Haas oscillations in two different systems: EuO/KTaO$_3$ (EuO/KTO) and LaAlO$_3$/SrTiO$_3$ (LAO/STO). To accurately resolve these oscillations, we conducted transport measurements in high magnetic fields up to 60 T and low temperatures down to 100 mK. For 2D confined electrons at both interfaces, we observed a progressive increase of oscillations frequency and cyclotron mass with the magnetic field. We interpret these intriguing findings by considering the existence of non-trivial electronic bands, for which the $E-k$ dispersion incorporates both linear and parabolic dispersion relations. In addition to providing experimental evidence for topological-like electronic states in KTO-2DES and STO-2DES, the unconventional oscillations presented in this study establish a new paradigm for quantum oscillations in 2DES based on perovskite transition metal oxides, where the oscillations frequency exhibits quadratic dependence on the magnetic field

Electronic g-factor and Magneto-transport in InSb Quantum Wells

High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid$ =35$\pm$4 and a value for the effective mass of $m^*\approx0.017 m_0$, where $m_0$ is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture. Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.Comment: 18 Pages, 5 Figure

Phonon-mediated room-temperature quantum Hall transport in graphene

The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering. Investigating thermally-activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B-field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm.Comment: 17 pages, 4 figures. Supplementary information available at https://doi.org/10.1038/s41467-023-35986-

Large magnetoresistance over a wide temperature range in Eu

We report the magnetization (M), electrical resistivity $(\rho)$ and magnetoresistance (MR) in the electron-doped antiferromagnet Eu0.99La0.01TiO3. While M(T) measured upon cooling indicates the occurrence of a paramagnetic to antiferromagnetic transition at $T_{N}=5.46\ \text{K}$ , zero field $\rho (T)$ goes through a broad maximum at $T = T_{p} =65\ \text{K} \gg T_{N}$ . The application of an external magnetic field raises the value of Tp and decreases the magnitude of ρ at Tp leading to a negative magnetoresistance (MR) effect. A large MR of $-75{\%}$ for $\mu_{0}H=7\ \text{T}$ is observed at 2.5 K with a remarkable change occurring in sub-tesla magnetic fields ($\textit{MR}= -42{\%}$ for $H= 0.6\ \text{T}$ ). In addition, significant MR prevails even up to 10 TN ($\textit{MR}=-20{\%}$ at 50 K). While MR over a wide field range for $T \gg T_{N}$ can be satisfactorily described by the equation $MR=-a^{2}\ln (1+b^{2}H^{2})$ , MR scales with M below TN. Unlike the resistivity, thermopower is insensitive to magnetic fields. Our results indicate that electrons doped into the Ti-3d conduction band are strongly coupled to localized 4f7 spins of Eu2+ ions via the $d\text{-}f$ exchange interaction. We suggest that the observed MR is most likely caused by the field-induced suppression of 4f spin fluctuations and the subsequent reduction of the scattering of 3d electrons. This is a unique example in perovskite oxides where the magnetoresistance of 3d electrons is controlled by spin fluctuations associated with 4f localized electrons of a rare-earth ion