Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering

The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freestanding graphene. This result is explained quantitatively as a consequence of pinning by the substrate. In contrast, graphene grown on polycrystalline Ni films is shown to be unpinned, i.e., to behave elastically as freestanding, despite the relatively strong interaction with the metal substrate. Moreover, it is shown that the transfer of exfoliated graphene layers onto a supporting substrate can result in pinned or unpinned layers, depending on the transfer protocol.Comment: 4 pages, 5 figures. To appear in Physical Review B, Brief Communicatio

In-Situ Observation of Surface and Near-Surface Modification Using Scattering of Ballistic Phonons

We have investigated the feasibility of phonon-reflection techniques as non-destructive means to probe surface and/or near-surface damage in otherwise highly perfect crystals. A UHV liquid-helium stage, suitable for phonon-reflection measurements, was installed on a beam line of a tandem van de Graaff accelerator which was used to implant MeV ions into the substrate in order to modify the subsurface region in situ. Here, we report our investigation on the effects of 1 MeV Ar⁺ implantation in Al₂O₃ single crystals by monitoring the reflection of terahertz (THz) phonons (50 Å wavelength) from the implanted region. The results are supported by x-ray rocking measurements and Monte Carlo simulations. Using a 15 kV ion gun on the same beam line we have also bombarded Al₂O₃ crystals coated with thin films of gold. The effects of a 7.5 keV Ar⁺ irradiation on this Au - Al₂O₃ system are also discussed in this thesis. The relevance of this work is discussed in connection to the observations made by other groups and also to our previous work (reported in Appendix 3) on phonon-induced desorption of He atoms as well as the Kapitza anomaly.</p

Adhesion characteristics of PDMS surfaces during repeated pull-off force measurements

To mimic the adhesive effects of gecko toes, artificial surfaces have been manufactured recently using polydimethylsiloxanes (PDMS). However, the effects of repeated contacts on the adhesive properties remain largely unexplored. In this paper we report on the effect of repeated pull-off force measurements on the adhesion behavior of PDMS (polymer kit Sylgard 184, Dow Corning) tested with a borosilicate glass probe. A decrease in pull-off force with increase in number of test cycles is found until a plateau is reached. The initial value and the rate of change in pull-off force strongly depend on the sample preparation procedure, including curing time and cross-linking. It is proposed that the behavior is due to steady coverage of the probe with free oligomers. The results are crucial for developing reusable, durable, and residue-free bioinspired adhesives

Evolution in Surface Morphology of Epitaxial Graphene Layers on SiC Induced by Controlled Structural Strain

The evolution in the surface morphology of epitaxial graphene films and 6H-SiC(0001) substrates is studied by electron channeling contrast imaging. Whereas film thickness is determined by growth temperature only, increasing growth times at constant temperature affect both internal stress and film morphology. Annealing times in excess of 8-10 minutes lead to an increase in the mean square roughness of SiC step edges to which graphene films are pinned, resulting in compressively stressed films at room temperature. Shorter annealing times produce minimal changes in the morphology of the terrace edges and result in nearly stress-free films upon cooling to room temperature.Comment: 3 pages, 2 figures. Applied Physics Letters 93 (2008), 19191

3D Stretchable Arch Ribbon Array Fabricated via Grayscale Lithography.

Microstructures with flexible and stretchable properties display tremendous potential applications including integrated systems, wearable devices and bio-sensor electronics. Hence, it is essential to develop an effective method for fabricating curvilinear and flexural microstructures. Despite significant advances in 2D stretchable inorganic structures, large scale fabrication of unique 3D microstructures at a low cost remains challenging. Here, we demonstrate that the 3D microstructures can be achieved by grayscale lithography to produce a curved photoresist (PR) template, where the PR acts as sacrificial layer to form wavelike arched structures. Using plasma-enhanced chemical vapor deposition (PECVD) process at low temperature, the curved PR topography can be transferred to the silicon dioxide layer. Subsequently, plasma etching can be used to fabricate the arched stripe arrays. The wavelike silicon dioxide arch microstructure exhibits Young modulus and fracture strength of 52 GPa and 300 MPa, respectively. The model of stress distribution inside the microstructure was also established, which compares well with the experimental results. This approach of fabricating a wavelike arch structure may become a promising route to produce a variety of stretchable sensors, actuators and circuits, thus providing unique opportunities for emerging classes of robust 3D integrated systems

Integrated superhard and metallic coatings for MEMS : LDRD 57300 final report.

Two major research areas pertinent to microelectromechanical systems (MEMS) materials and material surfaces were explored and developed in this 5-year PECASE LDRD project carried out by Professor Roya Maboudian and her collaborators at the University of California at Berkeley. In the first research area, polycrystalline silicon carbide (poly-SiC) was developed as a structural material for MEMS. This material is potentially interesting for MEMS because compared to polycrystalline silicon (polysilicon), the structural material in Sandia National Laboratories' SUMMiTV process, it may exhibit high wear resistance, high temperature operation and a high Young's modulus to density ratio. Each of these characteristics may extend the usefulness of MEMS in Sandia National Laboratories' applications. For example, using polycrystalline silicon, wear is an important issue in microengines, temperature degradation is of concern in thermal actuators and the characteristics of resonators can be extended with the same lithography technology. Two methods of depositing poly-SiC from a 1,3-disilabutane source at 650 C to 800 C by low-pressure chemical vapor deposition (LPCVD) were demonstrated. These include a blanket method in which the material is made entirely out of poly-SiC and a method to coat previously released and fabricated polysilicon MEMS. This deposition method is much simpler to use than previous methods such as high temperature LPCVD and atmospheric CVD. Other major processing issues that were surmounted in this LDRD with the poly-SiC film include etching, doping, and residual strain control. SiC is inert and as such is notoriously difficult to etch. Here, an HBr-based chemistry was demonstrated for the first time to make highly selective etching of SiC at high etch rates. Nitrogen was incorporated from an NH3 gas source, resulting in high conductivity films. Residual strain and strain gradient were shown to depend on deposition parameters, and can be made negative or positive. The tribology of poly-SiC was also investigated. Much improved release stiction and in-use stiction performance relative to polysilicon MEMS was found. Furthermore, wear of poly-SiC-coated MEMS was much reduced relative to uncoated polysilicon MEMS. A prototype baseline process flow now exists to produce poly-SiC in the Berkeley Sensor and Actuator (BSAC) facility. In the second project, galvanic deposition of metals onto polysilicon surfaces has been developed. The possible applications include reflective and optical coatings for optical MEMS, microswitches and microrelays for radio frequency MEMS and catalytic surfaces for microchemical reactors. In contrast to electroless deposition, galvanic displacement deposition requires no prior activation of the surface and is truly selective to silicon surfaces. This approach was used to deposit copper, gold and rhodium onto polysilicon MEMS. A method to study the adhesion of these metals to polysilicon was developed. It was also shown that the surfaces could be rendered hydrophobic by applying thiol-based self-assembled monolayers. This procedure also lowered their surface energy to {approx}3 {micro}J/m{sup 2}, consistent with monolayer-coated polysilicon MEMS

Metal-catalyzed crystallization of amorphous carbon to graphene

Metal-catalyzed crystallization of amorphous carbon to graphene by thermal annealing is demonstrated. In this "limited source" process scheme, the thickness of the precipitated graphene is directly controlled by the thickness of the initial amorphous carbon layer. This is in contrast to chemical vapor deposition processes, where the carbon source is virtually unlimited and controlling the number of graphene layers depends on the tight control over a number of deposition parameters. Based on the Raman analysis, the quality of graphene is comparable to other synthesis methods found in the literature, such as chemical vapor deposition. The ability to synthesize graphene sheets with tunable thickness over large areas presents an important progress toward their eventual integration for various technological applications.open826

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers.Comment: http://www.pnas.org/content/early/2014/04/10/1405435111.abstrac

Stiction, Adhesion Energy and the Casimir Effect in Micromechanical Systems

We measure the adhesion energy of gold using a micromachined doubly-clamped beam. The stress and stiffness of the beam are characterized by measuring the spectrum of mechanical vibrations and the deflection due to an external force. To determine the adhesion energy we induce stiction between the beam and a nearby surface by capillary forces. Subsequent analysis yields a value $\gamma =0.06$ J/m$^{2}$ that is a factor of approximately six smaller than predicted by idealized theory. This discrepancy may be resolved with revised models that include surface roughness and the effect of adsorbed monolayers intervening between the contacting surfaces in these mesoscopic structures.Comment: RevTex, 4 pages, 4 eps figure