Black holes and wormholes in AdS branes

In this work we have derived a class of geometries which describe black holes and wormholes in Randall-Sundrum-type brane models, focusing mainly on asymptotically anti-de Sitter backgrounds. We show that by continuously deforming the usual four dimensional vacuum background, a specific family of solutions is obtained. Maximal extensions of the solutions are presented, and their causal structures are discussed.Comment: 7 pages, 4 figures. Published version in Physical Review

Group theoretic dimension of stationary symmetric \alpha-stable random fields

The growth rate of the partial maximum of a stationary stable process was first studied in the works of Samorodnitsky (2004a,b), where it was established, based on the seminal works of Rosi\'nski (1995,2000), that the growth rate is connected to the ergodic theoretic properties of the flow that generates the process. The results were generalized to the case of stable random fields indexed by Z^d in Roy and Samorodnitsky (2008), where properties of the group of nonsingular transformations generating the stable process were studied as an attempt to understand the growth rate of the partial maximum process. This work generalizes this connection between stable random fields and group theory to the continuous parameter case, that is, to the fields indexed by R^d.Comment: To appear in Journal of Theoretical Probability. Affiliation of the authors are update

Secure, performance-oriented data management for nanoCMOS electronics

The EPSRC pilot project Meeting the Design Challenges of nanoCMOS Electronics (nanoCMOS) is focused upon delivering a production level e-Infrastructure to meet the challenges facing the semiconductor industry in dealing with the next generation of ‘atomic-scale’ transistor devices. This scale means that previous assumptions on the uniformity of transistor devices in electronics circuit and systems design are no longer valid, and the industry as a whole must deal with variability throughout the design process. Infrastructures to tackle this problem must provide seamless access to very large HPC resources for computationally expensive simulation of statistic ensembles of microscopically varying physical devices, and manage the many hundreds of thousands of files and meta-data associated with these simulations. A key challenge in undertaking this is in protecting the intellectual property associated with the data, simulations and design process as a whole. In this paper we present the nanoCMOS infrastructure and outline an evaluation undertaken on the Storage Resource Broker (SRB) and the Andrew File System (AFS) considering in particular the extent that they meet the performance and security requirements of the nanoCMOS domain. We also describe how metadata management is supported and linked to simulations and results in a scalable and secure manner

The influence of physical and chemical linkage on the properties of nanocomposites

It has been shown by several groups that the mechanical and electrical behavior of composites changes quite substantially, and often beneficially, when the filler particle size is less than 100 nm in diameter. There is also good reason to believe that the interface between the embedded particulates and the polymer matrix holds the key to understanding the bulk phenomena observed. Materials based on an SiO2-polyolefin system have been formulated with functionalized particulates so as to affect the physical and chemical linkages. The agents used to achieve this include amino-silane, hexamethyl-disilazane and triethoxyvinylsilane. The emerging picture of the interface is supported by detailed dielectric spectroscopy and internal space charge assessment. The nature of the internal structure has been related to the bulk properties observed such as the breakdown strength, voltage endurance, and the measurement of internal charges resulting from interfacial polarization

Nonlinear photon transport in a semiconductor waveguide-cavity system containing a single quantum dot: Anharmonic cavity-QED regime

We present a semiconductor master equation technique to study the input/output characteristics of coherent photon transport in a semiconductor waveguide-cavity system containing a single quantum dot. We use this approach to investigate the effects of photon propagation and anharmonic cavity-QED for various dot-cavity interaction strengths, including weakly-coupled, intermediately-coupled, and strongly-coupled regimes. We demonstrate that for mean photon numbers much less than 0.1, the commonly adopted weak excitation (single quantum) approximation breaks down, even in the weak coupling regime. As a measure of the anharmonic multiphoton-correlations, we compute the Fano factor and the correlation error associated with making a semiclassical approximation. We also explore the role of electron--acoustic-phonon scattering and find that phonon-mediated scattering plays a qualitatively important role on the light propagation characteristics. As an application of the theory, we simulate a conditional phase gate at a phonon bath temperature of $20$K in the strong coupling regime.Comment: To appear in PR