Peltier effect in normal metal-insulator-heavy fermion metal junctions

A theoretical study has been undertaken of the Peltier effect in normal metal - insulator - heavy fermion metal junctions. The results indicate that, at temperatures below the Kondo temperature, such junctions can be used as electronic microrefrigerators to cool the normal metal electrode and are several times more efficient in cooling than the normal metal - heavy fermion metal junctions.Comment: 3 pages in REVTeX, 2 figures, to be published in Appl. Phys. Lett., April 7, 200

A proposal for a scalable universal bosonic simulator using individually trapped ions

We describe a possible architecture to implement a universal bosonic simulator (UBS) using trapped ions. Single ions are confined in individual traps, and their motional states represent the bosonic modes. Single-mode linear operators, nonlinear phase-shifts, and linear beam splitters can be realized by precisely controlling the trapping potentials. All the processes in a bosonic simulation, except the initialization and the readout, can be conducted beyond the Lamb-Dicke regime. Aspects of our proposal can also be applied to split adiabatically a pair of ions in a single trap

Macushla

https://digitalcommons.library.umaine.edu/mmb-vp/6603/thumbnail.jp

USSR Space Life Sciences Digest, issue 3

This is the third issue of NASA's USSR Space Life Sciences Digest. Abstracts are included for 46 Soviet periodical articles in 20 areas of aerospace medicine and space biology and published in Russian during the second third of 1985. Selected articles are illustrated with figures and tables from the original. In addition, translated introductions and tables of contents for seven Russian books on six topics related to NASA's life science concerns are presented. Areas covered are adaptation, biospherics, body fluids, botany, cardiovascular and respiratory systems, endocrinology, exobiology, gravitational biology, habitability and environmental effects, health and medical treatment, immunology, life support systems, metabolism, microbiology, musculoskeletal system; neurophysiology, nutrition, perception, personnel selection, psychology, radiobiology, and space physiology. Two book reviews translated from the Russian are included and lists of additional relevant titles available in English with pertinent ordering information are given

Ground state correlations and structure of odd spherical nuclei

It is well known that the Pauli principle plays a substantial role at low energies because the phonon operators are not ideal boson operators. Calculating the exact commutators between the quasiparticle and phonon operators one can take into account the Pauli principle corrections. Besides the ground state correlations due to the quasiparticle interaction in the ground state influence the single particle fragmentation as well. In this paper, we generalize the basic QPM equations to account for both mentioned effects. As an illustration of our approach, calculations on the structure of the low-lying states in $^{131}$Ba have been performed.Comment: 12 pages, 1 figur

GaAs(111)A and B in hydrazine sulfide solutions : extreme polarity dependence of surface adsorption processes

Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga- adsorption sites, which have distinct configurations on the A and B surfaces

Absence of an intrinsic value for the surface recombination velocity in doped semiconductors

A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model. For a naturally oxidized surface $S$ is described by a power law in $P$ whereas for a passivated surface $S^{-1}$ varies logarithmically with $P$. Furthermore, the variation in $S$ with surface state density and bulk doping level is found to be the result of Fermi level unpinning rather than a change in the intrinsic surface recombination velocity. It is concluded that $S$ depends on $P$ throughout the experimentally accessible range of excitation powers and therefore that no instrinsic value can be determined. Previously reported values of $S$ on a range of semiconducting materials are thus only valid for a specific excitation power.Comment: 10 pages, 7 figure