Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble

We present the experimental evidence of giant optical anisotropy in single InAs quantum dots. Polarization-resolved photoluminescence spectroscopy reveals a linear polarization ratio with huge fluctuations, from one quantum dot to another, in sign and in magnitude with absolute values up to 82%. Systematic measurements on hundreds of quantum dots coming from two different laboratories demonstrate that the giant optical anisotropy is an intrinsic feature of dilute quantum-dot arrays.Comment: submitted to Applied Physics Letter

Time-resolved spectroscopy of multi-excitonic decay in an InAs quantum dot

The multi-excitonic decay process in a single InAs quantum dot is studied through high-resolution time-resolved spectroscopy. A cascaded emission sequence involving three spectral lines is seen that is described well over a wide range of pump powers by a simple model. The measured biexcitonic decay rate is about 1.5 times the single-exciton decay rate. This ratio suggests the presence of selection rules, as well as a significant effect of the Coulomb interaction on the biexcitonic wavefunction.Comment: one typo fixe

Nonlinear Coherent Magneto-Optical Response of a Single Chiral Carbon Nanotube

Published versio

Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot

Motional narrowing refers to the striking phenomenon where the resonance line of a system coupled to a reservoir becomes narrower when increasing the reservoir fluctuation. A textbook example is found in nuclear magnetic resonance, where the fluctuating local magnetic fields created by randomly oriented nuclear spins are averaged when the motion of the nuclei is thermally activated. The existence of a motional narrowing effect in the optical response of semiconductor quantum dots remains so far unexplored. This effect may be important in this instance since the decoherence dynamics is a central issue for the implementation of quantum information processing based on quantum dots. Here we report on the experimental evidence of motional narrowing in the optical spectrum of a semiconductor quantum dot broadened by the spectral diffusion phenomenon. Surprisingly, motional narrowing is achieved when decreasing incident power or temperature, in contrast with the standard phenomenology observed for nuclear magnetic resonance

Bistable Helmholtz bright solitons in saturable materials

We present, to the best of our knowledge, the first exact analytical solitons of a nonlinear Helmholtz equation with a saturable refractive-index model. These new two-dimensional spatial solitons have a bistable characteristic in some parameter regimes, and they capture oblique (arbitrary-angle) beam propagation in both the forward and backward directions. New conservation laws are reported, and the classic paraxial solution is recovered in an appropriate multiple limit. Analysis and simulations examine the stability of both solution branches, and stationary Helmholtz solitons are found to emerge from a range of perturbed input beams

Center-of-Mass Properties of the Exciton in Quantum Wells

We present high-quality numerical calculations of the exciton center-of-mass dispersion for GaAs/AlGaAs quantum wells of widths in the range 2-20 nm. The k.p-coupling of the heavy- and light-hole bands is fully taken into account. An optimized center-of-mass transformation enhances numerical convergence. We derive an easy-to-use semi-analytical expression for the exciton groundstate mass from an ansatz for the exciton wavefunction at finite momentum. It is checked against the numerical results and found to give very good results. We also show multiband calculations of the exciton groundstate dispersion using a finite-differences scheme in real space, which can be applied to rather general heterostructures.Comment: 19 pages, 12 figures included, to be published in Phys. Rev.

Exciton Spin Dynamics in Semiconductor Quantum Wells

In this paper we will review Exciton Spin Dynamics in Semiconductor Quantum Wells. The spin properties of excitons in nanostructures are determined by their fine structure. We will mainly focus in this review on GaAs and InGaAs quantum wells which are model systems.Comment: 55 pages, 27 figure

Excitonic recombination dynamics in shallow quantum wells

We report a comprehensive study of carrier-recombination dynamics in shallow AlxGa1-xAs/GaAs quantum wells. At low crystal temperature (2 K), the excitonic radiative recombination time is shown to be strongly enhanced in shallow quantum wells with x>0.01, consistently with a model that takes into account the thermal equilibrium between the three-dimensional exciton gas of the barrier and the two-dimensional exciton gas, which are closer in energy as x decreases. Furthermore, we demonstrate the existence of a thermally activated escape mechanism due to the low effective barrier height in these structures. The nonradiative recombination is shown to dominate the carrier dynamics for temperatures as low as 10 K for x≈0.01. Our experimental observations are analyzed using three different variational exciton calculations. In particular, we study the crossover from the two-dimensional to the three-dimensional behavior of the exciton, which occurs for x as low as 0.01 and affects mainly the oscillator strength, whereas the transition energies in shallow quantum wells can be calculated, to a large extent, using the same approximations as for conventional quantum wells. The peculiar behavior of the oscillator strength at the crossover to the weak confinement regime is obtained by expansion in a large basis