43 research outputs found

    Antibacterial properties of Ag-TiO2 composite sol-gel coatings

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    This study reveals the connection between the silver-doping method, the resulting nature and amount of the silver dopant together with the structural properties and the long-term antibacterial activity of composite coatings.</p

    In- and out-plane transport properties of chemical vapor deposited TiO2 anatase films

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    Due to their polymorphism, TiO2 films are quintessential components of state-of-the-art functional materials and devices for various applications from dynamic random access memory to solar water splitting. However, contrary to other semiconductors/dielectric materials, the relationship between structural/morphological and electrical properties at the nano and microscales remains unclear. In this context, the morphological characteristics of TiO2 films obtained by metal–organic chemical vapor deposition (MOCVD) and plasma-enhanced chemical vapor deposition (PECVD), the latter including nitrogen doping, are investigated and they are linked to their in- and out-plane electrical properties. A transition from dense to tree-like columnar morphology is observed for the MOCVD films with increasing deposition temperature. It results in the decrease in grain size and the increase in porosity and disorder, and subsequently, it leads to the decrease in lateral carrier mobility. The increase in nitrogen amount in the PECVD films enhances the disorder in their pillar-like columnar morphology along with a slight increase in density. A similar behavior is observed for the out-plane current between the low temperature MOCVD films and the undoped PECVD ones. The pillar-like structure of the latter presents a lower in-plane resistivity than the low temperature MOCVD films, whereas the out-plane resistivity is lower. The tree-like columnar structure exhibits poor in- and out-plane conductivity properties, whereas pillar-like and dense TiO2 exhibits similar in- and out-plane conductivities even if their morphologies are noticeably different

    Chemical route for formation of intermetallic Zn4Sb3 phase

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    International audienc

    Porosity and structure evolution of a SiOCH low k material during post-etch cleaning process

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    Présentation : W. PUYRENIEREuropean Workshop on Materials for Advanced Metallization (MAM - 2007), Bruges (Belgique), 4-7 Mars 2007International audienc

    Optimization of the molecular sieving properties of amorphous SiC

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    In this work, low frequency PECVD a-SiCxNy:H thin films have been synthesized in the temperature range 25–300 ∘C from hexamethyldisilazane precursor mixed with ammonia at various concentrations. A relevant correlation has been evidenced between the [N]/[C] atomic ratio in the gaseous phase and in the deposited thin films, allowing both prediction and control of the film microstructure. A simple method based on the analysis of the films FTIR spectra was proposed to determine the value of the [N]/[C] ratio and thus predict or adjust the gas transport properties of the membrane materials. Attractive ideal selectivities α*He/N2 exceeding 90 with He permeance ΠHe > 3.10−7 mol.s−1.m−2.Pa−1 were measured at 150 ∘C for the films prepared at 300 ∘C with an optimum [N]/[C] atomic ratio in the range 0.1–1.5. These films behave as molecular sieve membranes with a thermally activated transport of helium
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