MEASUREMENT OF THE FIDUCIAL CROSS SECTION FOR VECTOR-BOSON-FUSION PRODUCTION OF THE HIGGS BOSON IN THE WW DECAY CHANNEL WITH THE ATLAS DETECTOR

This doctoral thesis presents a measurement of the fiducial and differential cross section of vector boson fusion produced Higgs boson.The measurement is taken in the H → WW∗ → lνlν channel with 139 fb−1 of data. Proton-proton collisions from the Large Hadron Collider at √s = 13 TeV were recorded by the ATLAS detector. New analysis techniques using boosted decision trees with a statistical fit are introduced to accurately estimate backgrounds in the signal region. The fiducial cross section is measured to be 1.7 ± 0.42fb. The differential cross section was measured for 13 kinematic variables. No significant deviations from standard model predictions are observed

The ABC130 barrel module prototyping programme for the ATLAS strip tracker

For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.Comment: 82 pages, 66 figure

Discutindo a educação ambiental no cotidiano escolar: desenvolvimento de projetos na escola formação inicial e continuada de professores

A presente pesquisa buscou discutir como a Educação Ambiental (EA) vem sendo trabalhada, no Ensino Fundamental e como os docentes desta escola compreendem e vem inserindo a EA no cotidiano escolar., em uma escola estadual do município de Tangará da Serra/MT, Brasil. Para tanto, realizou-se entrevistas com os professores que fazem parte de um projeto interdisciplinar de EA na escola pesquisada. Verificou-se que o projeto da escola não vem conseguindo alcançar os objetivos propostos por: desconhecimento do mesmo, pelos professores; formação deficiente dos professores, não entendimento da EA como processo de ensino-aprendizagem, falta de recursos didáticos, planejamento inadequado das atividades. A partir dessa constatação, procurou-se debater a impossibilidade de tratar do tema fora do trabalho interdisciplinar, bem como, e principalmente, a importância de um estudo mais aprofundado de EA, vinculando teoria e prática, tanto na formação docente, como em projetos escolares, a fim de fugir do tradicional vínculo “EA e ecologia, lixo e horta”.Facultad de Humanidades y Ciencias de la Educació

Temporal Attention for Language Models

Pretrained language models based on the transformer architecture have shown great success in NLP. Textual training data often comes from the web and is thus tagged with time-specific information, but most language models ignore this information. They are trained on the textual data alone, limiting their ability to generalize temporally. In this work, we extend the key component of the transformer architecture, i.e., the self-attention mechanism, and propose temporal attention - a time-aware self-attention mechanism. Temporal attention can be applied to any transformer model and requires the input texts to be accompanied with their relevant time points. It allows the transformer to capture this temporal information and create time-specific contextualized word representations. We leverage these representations for the task of semantic change detection; we apply our proposed mechanism to BERT and experiment on three datasets in different languages (English, German, and Latin) that also vary in time, size, and genre. Our proposed model achieves state-of-the-art results on all the datasets.Comment: Findings of NAACL 2022. 9 page

Effect of gamma irradiation on leakage current in CMOS read-out chips for the ATLAS upgrade silicon strip tracker at the HL-LHC

The increase of the leakage current of NMOS transistors in detector readout chips in certain 130 nm CMOS technologies during exposure to ionising radiation needs special consideration in the design of detector systems, as this can result in a large increase of the supply current and power dissipation. As part of the R&D; program for the upgrade of the ATLAS inner detector tracker for the High Luminosity upgrade of the LHC at CERN, a dedicated set of irradiations have been carried out with the $^60$Co gamma-ray source at the Brookhaven National Laboratory. Measurements will be presented that characterise the increase in the digital leakage current in the 130 nm-technology ABC130 readout chips. The variation of the current as a function of time and total ionising dose has been studied under various conditions of dose rate, temperature and power applied to the chip. The range of variation of dose rates and temperatures has been set to be close to those expected at the High Luminosity LHC, i.e. in the range 0.6 krad h$^{−1}$ - 2.5 krad h $^{−1}$ and between -10 ℃ and + 10 ℃. Two of the chips under test were pre-irradiated with high doses of X-rays at Rutherford Appleton Laboratory. The results show the dependence of the leakage current with the parameters under study and provide valuable information for the understanding of the underlying mechanisms responsible for radiation damage in transistors and detector readout chips