Proximity-induced topological transition and strain-induced charge transfer in graphene/MoS2 bilayer heterostructures

Graphene/MoS2 heterostructures are formed by combining the nanosheets of graphene and monolayer MoS2. The electronic features of both constituent monolayers are rather well-preserved in the resultant heterostructure due to the weak van der Waals interaction between the layers. However, the proximity of MoS2 induces strong spin orbit coupling effect of strength ~1 meV in graphene, which is nearly three orders of magnitude larger than the intrinsic spin orbit coupling of pristine graphene. This opens a bandgap in graphene and further causes anticrossings of the spin-nondegenerate bands near the Dirac point. Lattice incommensurate graphene/MoS2 heterostructure exhibits interesting moire' patterns which have been observed in experiments. The electronic bandstructure of heterostructure is very sensitive to biaxial strain and interlayer twist. Although the Dirac cone of graphene remains intact and no charge-transfer between graphene and MoS2 layers occurs at ambient conditions, a strain-induced charge-transfer can be realized in graphene/MoS2 heterostructure. Application of a gate voltage reveals the occurrence of a topological phase transition in graphene/MoS2 heterostructure. In this chapter, we discuss the crystal structure, interlayer effects, electronic structure, spin states, and effects due to strain and substrate proximity on the electronic properties of graphene/MoS2 heterostructure. We further present an overview of the distinct topological quantum phases of graphene/MoS2 heterostructure and review the recent advancements in this field.Comment: 31 pages, 12 figure

Scalable quantum memory in the ultrastrong coupling regime

Circuit quantum electrodynamics, consisting of superconducting artificial atoms coupled to on-chip resonators, represents a prime candidate to implement the scalable quantum computing architecture because of the presence of good tunability and controllability. Furthermore, recent advances have pushed the technology towards the ultrastrong coupling regime of light-matter interaction, where the qubit-resonator coupling strength reaches a considerable fraction of the resonator frequency. Here, we propose a qubit-resonator system operating in that regime, as a quantum memory device and study the storage and retrieval of quantum information in and from the Z2 parity-protected quantum memory, within experimentally feasible schemes. We are also convinced that our proposal might pave a way to realize a scalable quantum random-access memory due to its fast storage and readout performances.Comment: We have updated the title, abstract and included a new section on the open-system dynamic

Models for gamma-ray production in low-mass microquasars

Unlike high-mass gamma-ray binaries, low-mass microquasars lack external sources of radiation and matter that could produce high-energy emission through interactions with relativistic particles. In this work we consider the synchrotron emission of protons and leptons that populate the jet of a low-mass microquasar. In our model photohadronic and inverse Compton (IC) interactions with synchrotron photons produced by both protons and leptons result in a high-energy tail of the spectrum. We also estimate the contribution from secondary pairs injected through photopair production. The high-energy emission is dominated by radiation of hadronic origin, so we can call these objects proton microquasars.Comment: 4 pages, 2 figures, accepted for publication in the International Journal of Modern Physics D, proceedings of HEPRO meeting, held in Dublin, in September 200

Modeling of gas adsorption on graphene nanoribbons

We present a theory to study gas molecules adsorption on armchair graphene nanoribbons (AGNRs) by applying the results of \emph{ab} \emph{initio} calculations to the single-band tight-binding approximation. In addition, the effect of edge states on the electronic properties of AGNR is included in the calculations. Under the assumption that the gas molecules adsorb on the ribbon sites with uniform probability distribution, the applicability of the method is examined for finite concentrations of adsorption of several simple gas molecules (CO, NO, CO$_2$, NH$_3$) on 10-AGNR. We show that the states contributed by the adsorbed CO and NO molecules are quite localized near the center of original band gap and suggest that the charge transport in such systems cannot be enhanced considerably, while CO$_2$ and NH$_3$ molecules adsorption acts as acceptor and donor, respectively. The results of this theory at low gas concentration are in good agreement with those obtained by density-functional theory calculations.Comment: 7 pages, 6 figure