К вопросу о путях достижения национальной безопасности в условиях глобализации: проблемы теории и практики в контексте внешней политики России и Польши

The article examines changes in the interpretation of the concept of national security under the influence of globalization. The author reveals the impact of formation and development of the contemporary world order on the security policy of separately taken countries. Based on analysis of the Russia’s and Poland’s basic documents in the field of national security he compares the priorities of each country in this sphere during the end of XX – beginning of XXI century. The conclusion demonstrates not only common positions, but also differences in the two countries’ approaches to the problems of their own national security.В статье рассмотрены изменения в трактовках понятия национальной безопасности, происшедшие под влиянием глобализационных процессов. Автор показывает как на политику обеспечения безопасности отдельных стран воздействуют особенности формирования и развития современного миропорядка. На основе анализа базовых документов в области национальной безопасности России и Польши в статье сравниваются приоритеты каждой страны в этой сфере, проявившиеся в конце ХХ – начале XXI века. Дана оценка не только общим позициям, но и различиям в подходах двух стран к проблемам достижения собственной национальной безопасности

Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor delta-barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance, with internal GHz Josephson emission within frameworks of the normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane

Composite Bosons in Silicon Nanosandwiches

The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300K, quantum Hall, 77K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface