Differences in Race Characteristics between World-Class Individual-Medley and Stroke-Specialist Swimmers

The purpose of the present study was to investigate differences between world-class individual medley (IM) swimmers and stroke-specialists using race analyses. A total of eighty 200 m races (8 finalists × 2 sexes × 5 events) at the 2021 European long-course swimming championships were analysed. Eight digital video cameras recorded the races, and the video footage was manually analysed to obtain underwater distance, underwater time, and underwater speed, as well as clean-swimming speed, stroke rate, and distance per stroke. Each lap of the IM races was compared with the first, second, third, and fourth laps of butterfly, backstroke, breaststroke, and freestyle races, respectively. Differences between IM swimmers and specialists in each analysed variable were assessed using an independent-sample t-test, and the effects of sex and stroke on the differences were analysed using a two-way analysis of variance with relative values (IM swimmers’ score relative to the mean specialists’ score) as dependent variables. Breaststroke specialists showed faster clean-swimming speed and longer distance per stroke than IM swimmers for both males (clean-swimming speed: p = 0.011; distance per stroke: p = 0.023) and females (clean-swimming speed: p = 0.003; distance per stroke: p = 0.036). For backstroke and front crawl, specialists exhibited faster underwater speeds than IM swimmers (all p < 0.001). Females showed faster relative speeds during butterfly clean-swimming segments (p < 0.001) and breaststroke underwater segments than males (p = 0.028). IM swimmers should focus especially on breaststroke training, particularly aiming to improve their distance per stroke

A compact and cost-effective hard X-ray free-electron laser driven by a high-brightness and low-energy electron beam

We present the first lasing results of SwissFEL, a hard X-ray free-electron laser (FEL) that recently came into operation at the Paul Scherrer Institute in Switzerland. SwissFEL is a very stable, compact and cost-effective X-ray FEL facility driven by a low-energy and ultra-low-emittance electron beam travelling through short-period undulators. It delivers stable hard X-ray FEL radiation at 1-Å wavelength with pulse energies of more than 500 μJ, pulse durations of ~30 fs (root mean square) and spectral bandwidth below the per-mil level. Using special configurations, we have produced pulses shorter than 1 fs and, in a different set-up, broadband radiation with an unprecedented bandwidth of ~2%. The extremely small emittance demonstrated at SwissFEL paves the way for even more compact and affordable hard X-ray FELs, potentially boosting the number of facilities worldwide and thereby expanding the population of the scientific community that has access to X-ray FEL radiation

Ionic liquids at electrified interfaces

Until recently, “room-temperature” (<100–150 °C) liquid-state electrochemistry was mostly electrochemistry of diluted electrolytes(1)–(4) where dissolved salt ions were surrounded by a considerable amount of solvent molecules. Highly concentrated liquid electrolytes were mostly considered in the narrow (albeit important) niche of high-temperature electrochemistry of molten inorganic salts(5-9) and in the even narrower niche of “first-generation” room temperature ionic liquids, RTILs (such as chloro-aluminates and alkylammonium nitrates).(10-14) The situation has changed dramatically in the 2000s after the discovery of new moisture- and temperature-stable RTILs.(15, 16) These days, the “later generation” RTILs attracted wide attention within the electrochemical community.(17-31) Indeed, RTILs, as a class of compounds, possess a unique combination of properties (high charge density, electrochemical stability, low/negligible volatility, tunable polarity, etc.) that make them very attractive substances from fundamental and application points of view.(32-38) Most importantly, they can mix with each other in “cocktails” of one’s choice to acquire the desired properties (e.g., wider temperature range of the liquid phase(39, 40)) and can serve as almost “universal” solvents.(37, 41, 42) It is worth noting here one of the advantages of RTILs as compared to their high-temperature molten salt (HTMS)(43) “sister-systems”.(44) In RTILs the dissolved molecules are not imbedded in a harsh high temperature environment which could be destructive for many classes of fragile (organic) molecules

Reliability of Two Recently Developed Procedures Assessing Biological Maturity by Ultrasound Imaging—A Pilot Study

During puberty, the biological maturity of children of the same chronological age differs. To generate equal opportunities for talent selection in youth sports, the athlete’s biological maturity should be considered. This is often assessed with a left hand and wrist radiography. Alternatively, ultrasound (US) could be advantageous, especially by avoiding ionizing radiation. This pilot study aimed to assess intrarater and interrater reliability of an experienced and a non-experienced examiner in an US-based examination of the knee in 20 healthy females (10–17 years). Epiphyseal closure at five anatomical landmarks was staged (stages 1–3) and its interrater and intrarater reliabilities were analyzed using Cohen’s kappa (k). Interrater reliability of the calculation of the ossification ratio (OssR) was analyzed using the Bland-Altman method and intraclass correlation coefficients (ICCs). Interrater reliability for the stages was almost perfect for four landmarks. Interrater reliability ranged from k = 0.69 to k = 0.90. Intrarater reliability for the stages was almost perfect for four landmarks. Intrarater reliability ranged from k = 0.70 to k = 1.0. For the OssR, ICC was 0.930 and a minimal detectable change of 0.030 was determined. To conclude, experienced and non-experienced examiners can reliably assign individuals to different ossification stages and calculate an OssR using US-based imaging of the knee

ELF exposure system for live cell imaging

A programmable system has been developed for the study of both transient and persistent effects of extremely low frequency (ELF) magnetic field exposure of cell cultures. This high-precision exposure system enables experimental blinding and fully characterized exposure while simultaneously allowing live cell imaging. It is based on a live imaging cell around which two asymmetrical coils are wound in good thermal contact to a temperature-controlled water jacket, and is mounted on a microscope stage insert. The applied B-field uniformity of the active volume is better than 1.2% with an overall exposure uncertainty of less than 4.3% with very low transient field levels. The computer-controlled apparatus allows signal waveforms that are sinusoidal or composed of several harmonics, blind protocols, and monitoring of exposure and environmental conditions. B-fields up to 4 mT root mean square amplitude are possible with minimal temperature variation and no recognizable temperature differences between exposure and sham states. Sources of artifacts have been identified and quantified. There are no visible vibrations observable even at the highest magnifications and exposure levels

Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements

The high power RF device performance decreases as operation temperature increases (e.g. fall of electron mobility impacting the cut-off frequencies and degradation of device reliability). Therefore the determination of device temperature is a key issue for device topology optimisation. This work presents the comparison between pulsed I-V at different temperature and DC measurements of AlGaN/GaN HEMTs grown on two different substrates: sapphire and silicon. This technique allows the determination of mean channel temperature and the device thermal resistance. The thermal resistance is a classical way to define the average channel temperature as a function of the dissipated power. In this work the thermal resistance ratio of the HEMT grown on sapphire compared to the one grown on silicon is found to be 1.7 instead of 3 as expected from straightforward thermal conductivity ratio. This lower difference is clearly attributed to the contribution of the GaN buffer layer