Thin crystalline silicon solar cells based on epitaxial films grown at 165 °C by RF-PECVD

International audienceWe report on heterojunction solar cells whose thin intrinsic crystalline absorber layer has been obtained by plasma enhanced chemical vapor deposition at 165 °C on highly doped p-type (1 0 0) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic layer thickness in the range from 1 to 2.5 μm. This absorber is responsible for photo-generated current whereas highly doped wafer behave like electric contact, as confirmed by external quantum efficiency measurements and simulations. A best conversion efficiency of 7% is obtained for a 2.4 μm thick cell with an area of 4 cm2, without any light trapping features. Moreover, the achievement of a fill factor as high as 78.6% is a proof that excellent quality of the epitaxial layers can be produced at such low temperatures

Low temperature plasma deposition of silicon thin films: From amorphous to crystalline

International audienceWe report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of silicon nanocrystals and point toward silicon nanocrystals being the most plausible building blocks for such epitaxial growth. The results lay the basis of a new approach for the obtaining of crystalline silicon thin films and open the path for transferring those epitaxial layers from c-Si wafers to low cost foreign substrates

Silicon epitaxy below 200°C: Towards thin crystalline solar cells

International audienceLow temperature plasma processes provide a toolbox for etching, texturing and deposition of a wide range of materials. Here we present a bottom up approach to grow epitaxial crystalline silicon films (epi-Si) by standard RF-PECVD at temperatures below 200°C. Booth structural and electronic properties of the epitaxial layers are investigated. Proof of high crystalline quality is deduced from spectroscopic ellipsometry and HRTEM measurements. Moreover, we build heterojunction solar cells with intrinsic epitaxial absorber thickness in the range of a few microns, grown at 175 °C on highly doped (100) substrates, in the wafer equivalent approach. Achievement of a fill factor as high as 80 % is a proof that excellent quality of epitaxial layers can be produced at such low temperatures. While 8.5 % conversion efficiency has already been achieved for a 3.4 µm epitaxial silicon absorber, the possibility of reaching 15 % conversion efficiency with few microns epi-Si is discussed based on a detailed opto-electrical modeling of current devices

Low Temperature Plasma Synthesis of Nanocrystals and their Application to the Growth of Crystalline Silicon and Germanium Thin Films

International audienceWe summarize our research studies on the synthesis of silicon and germanium nanocrystals and their application to the growth of a variety of thin films, spanning the range from fully disordered amorphous up to fully ordered crystalline. All these films are deposited in a standard radio-frequency glow discharge system at low temperature (~200 °C). We show how the plasma synthesis of silicon nanocrystals, initially a side effect of powder formation, has become over the years an exciting field of research which has opened the way to new opportunities in the field of materials deposition and their application to optoelectronic devices. Our results suggest that epitaxy requires the melting/amorphization of the nanocrystals upon impact on the substrate, the subsequent epitaxial growth being favored on (100) c-Si substrates. As a consequence, the control of the impact energy is a critical aspect of the growth which will require new strategies such as the use of tailored voltage waveforms

A potassium tert-butoxide and hydrosilane system for ultra-deep desulfurization of fuels

Hydrodesulfurization (HDS) is the process by which sulfur-containing impurities are removed from petroleum streams, typically using a heterogeneous, sulfided transition metal catalyst under high H_2 pressures and temperatures. Although generally effective, a major obstacle that remains is the desulfurization of highly refractory sulfur-containing heterocycles, such as 4,6-dimethyldibenzothiophene (4,6-Me_2DBT), which are naturally occurring in fossil fuels. Homogeneous HDS strategies using well-defined molecular catalysts have been designed to target these recalcitrant S-heterocycles; however, the formation of stable transition metal sulfide complexes following C–S bond activation has largely prevented catalytic turnover. Here we show that a robust potassium (K) alkoxide (O)/hydrosilane (Si)-based (‘KOSi’) system efficiently desulfurizes refractory sulfur heterocycles. Subjecting sulfur-rich diesel (that is, [S] ∼ 10,000 ppm) to KOSi conditions results in a fuel with [S] ∼ 2 ppm, surpassing ambitious future governmental regulatory goals set for fuel sulfur content in all countries. Fossil fuels contain naturally occurring organosulfur impurities, with quantities varying depending on the type of feedstock. These sulfur-containing organic small molecules poison catalytic converters and generate polluting sulfur dioxides when combusted. Hydrodesulfurization (HDS) is the industrial process by which sulfur impurities are removed from petroleum fractions prior to their use as fuels. Currently, HDS is performed by treating petroleum with H_2 at high pressures and temperatures (that is, 150–2,250 psi and 400 °C) over heterogeneous catalysts such as cobalt-doped molybdenum sulfide supported on alumina (that is, CoMoS_x∕γ-Al_2O_3; Fig. 1a). However, certain organosulfur species, in particular dibenzothiophenes alkylated at positions 4 and 6, are not efficiently removed. Homogeneous strategies employing sophisticated, well-defined transition metal complexes—including those based on platinum, nickel, tungsten, molybdenum, palladium, ruthenium, rhodium, iron, cobalt, and others—have been extensively investigated. While these studies have provided valuable mechanistic insights, several fundamental issues, such as the formation of stable organometallic S–M species upon C–S bond activation by the metal centre (Fig. 1b), generally restrict industrial implementation of such methods. Rare examples of desulfurization of dibenzothiophenes alkylated at the 4 and 6 positions by homogeneous transition metal catalysis utilized either Ni compounds in combination with superstoichiometric alkyl Grignard reagents or Ni or Co phosphoranimide complexes in the presence of superstoichiometric KH. These issues pose a formidable challenge for the development of new HDS methods. Moreover, increasingly strict governmental regulations require limiting the sulfur content in diesel fuel and gasoline (in the US: typically <15 and <30 ppm, respectively) as well as other fuels, rendering the development of new powerful HDS methods a primary global concern. In 2013, Grubbs and co-workers reported the KO^tBu mediated cleavage of aryl C–O bonds in lignin models in the absence of transition metals using hydrosilanes. Careful inductively coupled plasma mass spectrometry (ICP-MS) analyses of the reagents and reaction mixtures ruled out catalysis with transition metals. We thus became interested in extending this method to sulfur heterocycles of relevance in oil and gas refining applications. Herein, we report that the robust KOtBu/silane-based (that is, KOSi) system is a powerful and effective homogeneous HDS method, which desulfurizes HDS-resistant dibenzothiophenes in good yield and reduces the sulfur content in diesel fuel to remarkably low levels (Fig. 1c)

Toward Early-Warning Detection of Gravitational Waves from Compact Binary Coalescence

Rapid detection of compact binary coalescence (CBC) with a network of advanced gravitational-wave detectors will offer a unique opportunity for multi-messenger astronomy. Prompt detection alerts for the astronomical community might make it possible to observe the onset of electromagnetic emission from (CBC). We demonstrate a computationally practical filtering strategy that could produce early-warning triggers before gravitational radiation from the final merger has arrived at the detectors.Comment: 16 pages, 7 figures, published in ApJ. Reformatted preprint with emulateap

A potassium tert-butoxide and hydrosilane system for ultra-deep desulfurization of fuels

Hydrodesulfurization (HDS) is the process by which sulfur-containing impurities are removed from petroleum streams, typically using a heterogeneous, sulfided transition metal catalyst under high H_2 pressures and temperatures. Although generally effective, a major obstacle that remains is the desulfurization of highly refractory sulfur-containing heterocycles, such as 4,6-dimethyldibenzothiophene (4,6-Me_2DBT), which are naturally occurring in fossil fuels. Homogeneous HDS strategies using well-defined molecular catalysts have been designed to target these recalcitrant S-heterocycles; however, the formation of stable transition metal sulfide complexes following C–S bond activation has largely prevented catalytic turnover. Here we show that a robust potassium (K) alkoxide (O)/hydrosilane (Si)-based (‘KOSi’) system efficiently desulfurizes refractory sulfur heterocycles. Subjecting sulfur-rich diesel (that is, [S] ∼ 10,000 ppm) to KOSi conditions results in a fuel with [S] ∼ 2 ppm, surpassing ambitious future governmental regulatory goals set for fuel sulfur content in all countries. Fossil fuels contain naturally occurring organosulfur impurities, with quantities varying depending on the type of feedstock. These sulfur-containing organic small molecules poison catalytic converters and generate polluting sulfur dioxides when combusted. Hydrodesulfurization (HDS) is the industrial process by which sulfur impurities are removed from petroleum fractions prior to their use as fuels. Currently, HDS is performed by treating petroleum with H_2 at high pressures and temperatures (that is, 150–2,250 psi and 400 °C) over heterogeneous catalysts such as cobalt-doped molybdenum sulfide supported on alumina (that is, CoMoS_x∕γ-Al_2O_3; Fig. 1a). However, certain organosulfur species, in particular dibenzothiophenes alkylated at positions 4 and 6, are not efficiently removed. Homogeneous strategies employing sophisticated, well-defined transition metal complexes—including those based on platinum, nickel, tungsten, molybdenum, palladium, ruthenium, rhodium, iron, cobalt, and others—have been extensively investigated. While these studies have provided valuable mechanistic insights, several fundamental issues, such as the formation of stable organometallic S–M species upon C–S bond activation by the metal centre (Fig. 1b), generally restrict industrial implementation of such methods. Rare examples of desulfurization of dibenzothiophenes alkylated at the 4 and 6 positions by homogeneous transition metal catalysis utilized either Ni compounds in combination with superstoichiometric alkyl Grignard reagents or Ni or Co phosphoranimide complexes in the presence of superstoichiometric KH. These issues pose a formidable challenge for the development of new HDS methods. Moreover, increasingly strict governmental regulations require limiting the sulfur content in diesel fuel and gasoline (in the US: typically <15 and <30 ppm, respectively) as well as other fuels, rendering the development of new powerful HDS methods a primary global concern. In 2013, Grubbs and co-workers reported the KO^tBu mediated cleavage of aryl C–O bonds in lignin models in the absence of transition metals using hydrosilanes. Careful inductively coupled plasma mass spectrometry (ICP-MS) analyses of the reagents and reaction mixtures ruled out catalysis with transition metals. We thus became interested in extending this method to sulfur heterocycles of relevance in oil and gas refining applications. Herein, we report that the robust KOtBu/silane-based (that is, KOSi) system is a powerful and effective homogeneous HDS method, which desulfurizes HDS-resistant dibenzothiophenes in good yield and reduces the sulfur content in diesel fuel to remarkably low levels (Fig. 1c)