Ultrafast Intraband Spectroscopy of Hot-Carrier Cooling in Lead-Halide Perovskites

The rapid relaxation of above-band-gap “hot” carriers (HCs) imposes the key efficiency limit in lead-halide perovskite (LHP) solar cells. Recent studies have indicated that HC cooling in these systems may be sensitive to materials composition, as well as the energy and density of excited states. However, the key parameters underpinning the cooling mechanism are currently under debate. Here we use a sequence of ultrafast optical pulses (visible pump–infrared push–infrared probe) to directly compare the intraband cooling dynamics in five common LHPs: FAPbI₃, FAPbBr₃, MAPbI₃, MAPbBr₃, and CsPbBr₃. We observe ∼100–900 fs cooling times, with slower cooling at higher HC densities. This effect is strongest in the all-inorganic Cs-based system, compared to the hybrid analogues with organic cations. These observations, together with band structure calculations, allow us to quantify the origin of the “hot-phonon bottleneck” in LHPs and assert the thermodynamic contribution of a symmetry-breaking organic cation toward rapid HC cooling

Perovskite–Perovskite Homojunctions via Compositional Doping

One of the most important properties of semiconductors is the possibility of controlling their electronic behavior via intentional doping. Despite the unprecedented progress in the understanding of hybrid metal halide perovskites, extrinsic doping of perovskite remains nearly unexplored and perovskite–perovskite homojunctions have not been reported. Here we present a perovskite–perovskite homojunction obtained by vacuum deposition of stoichiometrically tuned methylammonium lead iodide (MAPI) films. Doping is realized by adjusting the relative deposition rates of MAI and PbI₂, obtaining p-type (MAI excess) and n-type (MAI defect) MAPI. The successful stoichiometry change in the thin films is confirmed by infrared spectroscopy, which allows us to determine the MA content in the films. We analyzed the resulting thin-film junction by cross-sectional scanning Kelvin probe microscopy (SKPM) and found a contact potential difference (CPD) of 250 mV between the two differently doped perovskite layers. Planar diodes built with the perovskite–perovskite homojunction show the feasibility of our approach for implementation in devices

Correlation between Chemical and Electronic Properties of Solution-Processed Nickel Oxide

Solution-processed nickel oxide (sNiO) is known to be an excellent charge-selective interlayer in optoelectronic devices. Its beneficial properties can be further enhanced by an oxygen plasma (OP) treatment. In order to elucidate the mechanism behind this improvement, we use infrared transmission and X-ray photoelectron spectroscopy to probe the bulk and surface properties of the sNiO. We find that increasing the annealing temperature of the sNiO not only increases the structural order of the material but also reduces the concentration of nickel hydroxide species present in the bulk and on the surface of the film. This results in a decrease of the work function, while an additional OP treatment raises the work function to between 5.5 and 5.6 eV. For all annealing temperatures investigated, the consequences of the OP treatment are identified as reactions of both NiO and β-Ni­(OH)₂ to form thin β-NiOOH phases in the first atomic layers. Our results emphasize the importance of understanding the correlation between the preparation and resulting properties of sNiO layers and provides further insight into the interpretation of interface properties of NiO

Dopant Diffusion in Sequentially Doped Poly(3-hexylthiophene) Studied by Infrared and Photoelectron Spectroscopy

The diffusivity of dopants in semiconducting polymers is of high interest as it enables methods of sequential doping but also affects device stability. In this study, we investigate the diffusion of a bulky sequentially deposited p-dopant in poly­(3-hexylthiophene) (P3HT) thin films using nondestructive <i>in situ</i> infrared (IR) spectroscopy and photoelectron spectroscopy (PES). We probe dopant diffusion into the polymer film at varying coverage by differentially evaluating electron transfer in the bulk and at the surface. Thereby it is possible to determine dopant coverages at which both electron transfer and incorporation of dopants are saturated. By use of PES, neutral and charged dopants can be distinguished, revealing that charged dopants are less mobile in the diffusion process than neutral molecules. We further compare the diffusivity in semicrystalline and fully amorphous P3HT. We find that at high coverage semicrystalline P3HT seems to yield a higher capacity for dopants than fully amorphous P3HT. A temperature-dependent measurement of sequential doping shows directly that the incorporation of dopants is thermally activated and requires temperatures close to room temperature

Controlled Molecular Orientation of Inkjet Printed Semiconducting Polymer Fibers by Crystallization Templating

Here we present the controlled deposition of highly aligned poly­(3-hexylthiophene-2,5-diyl) (P3HT) fibers by inkjet printing. The functional ink consists of the crystallization agent 1,3,5-trichlorobenzene (TCB), the carrier solvent chlorobenzene, and the semiconducting polymer P3HT. The inkjet printing process was designed in such a way that the drying zone migrates in the printing direction, effectively growing the TCB out of solution and forcing the P3HT chains to align in the printing direction. The films are deposited in arbitrary shapes on a variety of substrates, thus demonstrating the full freedom of design necessary for the digital fabrication of future integrated circuits. We demonstrate by optical and structural investigations that P3HT arranges in a nontrivial empty-core–shell structure with the long molecular axis in the fiber direction while the short axis extends in a radial fashion. Such arrangement induces a fourfold increase in field-effect mobility along the fiber direction as compared to the isotropic printed reference

Functionalized Nickel Oxide Hole Contact Layers: Work Function versus Conductivity

Nickel oxide (NiO) is a widely used material for efficient hole extraction in optoelectronic devices. However, its surface characteristics strongly depend on the processing history and exposure to adsorbates. To achieve controllability of the electronic and chemical properties of solution-processed nickel oxide (sNiO), we functionalize its surface with a self-assembled monolayer (SAM) of 4-cyanophenylphosphonic acid. A detailed analysis of infrared and photoelectron spectroscopy shows the chemisorption of the molecules with a nominal layer thickness of around one monolayer and gives an insight into the chemical composition of the SAM. Density functional theory calculations reveal the possible binding configurations. By the application of the SAM, we increase the sNiO work function by up to 0.8 eV. When incorporated in organic solar cells, the increase in work function and improved energy level alignment to the donor does not lead to a higher fill factor of these cells. Instead, we observe the formation of a transport barrier, which can be reduced by increasing the conductivity of the sNiO through doping with copper oxide. We conclude that the widespread assumption of maximizing the fill factor by only matching the work function of the oxide charge extraction layer with the energy levels in the active material is a too narrow approach. Successful implementation of interface modifiers is only possible with a sufficiently high charge carrier concentration in the oxide interlayer to support efficient charge transfer across the interface

Dipolar SAMs Reduce Charge Carrier Injection Barriers in n‑Channel Organic Field Effect Transistors

In this work we examine small conjugated molecules bearing a thiol headgroup as self assembled monolayers (SAM). Functional groups in the SAM-active molecule shift the work function of gold to n-channel semiconductor regimes and improve the wettability of the surface. We examine the effect of the presence of methylene linkers on the orientation of the molecule within the SAM. 3,4,5-Trimethoxythiophenol (TMP-SH) and 3,4,5-trimethoxybenzylthiol (TMP-CH₂-SH) were first subjected to computational analysis, predicting work function shifts of −430 and −310 meV. Contact angle measurements show an increase in the wetting envelope compared to that of pristine gold. Infrared (IR) measurements show tilt angles of 22 and 63°, with the methylene-linked molecule (TMP-CH₂-SH) attaining a flatter orientation. The actual work function shift as measured with photoemission spectroscopy (XPS/UPS) is even larger, −600 and −430 meV, respectively. The contact resistance between gold electrodes and poly­[<i>N</i>,<i>N</i>′-bis­(2-octyldodecyl)-naphthalene-1,4:5,8-bis­(dicarboximide)-2,6-diyl]-<i>alt</i>-5,5′-(2,2′-bithiophene) (Polyera Aktive Ink, N2200) in n-type OFETs is demonstrated to decrease by 3 orders of magnitude due to the use of TMP-SH and TMP-CH₂-SH. The effective mobility was enhanced by two orders of magnitude, significantly decreasing the contact resistance to match the mobilities reported for N2200 with optimized electrodes