Impact of Nanofluids and Specific Frequency Absorbers in Parabolic Trough Collector Solar Furnaces

This meta-study aims to identify methods of optimising the efficiency of upcoming parabolic trough collector (PTC) solar furnace technology by analysing thermodynamic properties of both solar absorbers: SiC, Pyromark 2500, Polychromic Al-AlN and C54-TiSi2 nanoparticles; and heat transfer nanofluids: SiO2, TiO2, Al2O3, Cu and Al2O3-Cu with a 50:50 ratio. The thermodynamic properties investigated are energy absorbance and emittance, melting point, thermal conductivity and viscosity. Our study revealed that the optimal transfer fluid is the hybrid nanofluid Al2O3-Cu with a 50:50 ratio and a 1-2% volume fraction in an ethylene glycol base. The optimal solar absorber for use in combination with this nanofluid was found to be polychromic Al-AlN cerment absorber

Data Flow in Wireless Sensor Network Protocol Stack by using Bellman-Ford Routing Algorithm

Wireless sensor network consists various sensor nodes that are used to monitor any target area like forest fire detection by our army person and monitoring any industrial activity by industry manager. Wireless sensor networks have been deployed in several cities to monitor the concentration of dangerous gases for citizens. In wireless sensor network when sensor nodes communicate from each other then routing protocol are used for communication between protocol layers. Wireless sensor network protocol stack consist five layers such as Application layer, Transport layer, Network layer, MAC Layer, Physical layer. In this paper we study and analysis Bellman-Ford routing algorithm and check the flow of data between these protocol layers. For simulation purpose we are using Qualnet 5.0.2 simulator tool

Remember, Recover: Trauma and Transgenerational Negotiations with the Indian Partition in "This Side, That Side" and the "1947 Partition Archive"

The hauntings of the Indian Partition continue to be expressed via newer mediums as two or three generations negotiate its impact. This paper looks at role and function of the "1947 Partition Archive" that records oral testimonies of first-generation witnesses. It also examines an anthology of graphic narratives – "This Side, That Side" – that illustrates second-generation accounts of trying to understand the Partition, as it is passed down through stories and memories. Through an analysis of both, trans-generational negotiations with traumatic memories of the Indian Partition can be studied along with examining how newer channels open newer opportunities of representing its trauma. I argue that such mediums not only fulfil a therapeutic need but also highlight the trans-generational quality of forgiveness in light of collective traumas

Finding Home in A Pandemic

Journal #68 from Media Rise's Quarantined Across Borders Collection by Ritika Popli. From India. Quarantined in Ohio, United States of America.Media Rise Publications. Quarantined Across Borders Collection. Edited by Dr. Srividya "Srivi" Ramasubramanian.I briefly describe my experience of how the pandemic has changed the meaning of home

Investigation of different dielectric materials as gate insulator for MOSFETs

The scaling of semiconductor transistors has led to a decrease in thickness of the silicon dioxide layer used as gate dielectric. The thickness of the silicon dioxide layer is reduced to increase the gate capacitance, thus increasing the drain current. If the thickness of the gate dielectric decreases below 2nm, the leakage current due to the tunneling increases drastically. Hence it is necessary to replace the gate dielectric, silicon dioxide, with a physically thicker oxide layer of high-k materials like Hafnium oxide and Titanium oxide. High-k dielectric materials allow the capacitance to increase without a huge leakage current. Hafnium oxide and Titanium oxide films are deposited by reactive magnetron sputtering from Hafnium and Titanium targets respectively. These oxide layers are used to create metal-insulator-metal (MIM) structures using aluminum as the top and bottom electrodes. The films are deposited at various O2/Ar gas flow ratios, substrate temperatures, and process pressures. After attaining an exact recipe for these oxide layers that exhibit the desired parameters, MOS capacitors are fabricated with n-Si and p-Si substrates having aluminum electrodes at the top and bottom of each. Comparing the parameters of Hafnium oxide- and Titanium oxide- based MOS capacitors, MOSFET devices are designed with Hafnium oxide as gate dielectric