Observation of the Purcell effect in high-index-contrast micropillar

We have fabricated pillar microcavity samples with Bragg mirrors consisting of alternate layers of GaAs and Aluminium Oxide. Compared to the more widely studied GaAs/AlAs micropillars these mirrors can achieve higher reflectivities with fewer layer repeats and reduce the mode volume. We have studied a number of samples containing a low density of InGaAs/GaAs self assembled quantum dots in a cavity and here report observation of a three fold enhancement in the radiative lifetime of a quantum dot exciton state due to the Purcell effect

Oxide-apertured microcavity single-photon emitting diode

We have developed a microcavity single-photon source based on a single quantum dot within a planar cavity in which wet-oxidation of a high-aluminium content layer provides lateral confinement of both the photonic mode and the injection current. Lateral confinement of the optical mode in optically pumped structures produces a strong enhancement of the radiative decay rate. Using microcavity structures with doped contact layers, we demonstrate a single-photon emitting diode where current may be injected into a single dot

Charge and spin state readout of a double quantum dot coupled to a resonator

State readout is a key requirement for a quantum computer. For semiconductor-based qubit devices it is usually accomplished using a separate mesoscopic electrometer. Here we demonstrate a simple detection scheme in which a radio-frequency resonant circuit coupled to a semiconductor double quantum dot is used to probe its charge and spin states. These results demonstrate a new non-invasive technique for measuring charge and spin states in quantum dot systems without requiring a separate mesoscopic detector

Coulomb-Blockade directional coupler

A tunable directional coupler based on Coulomb Blockade effect is presented. Two electron waveguides are coupled by a quantum dot to an injector waveguide. Electron confinement is obtained by surface Schottky gates on single GaAs/AlGaAs heterojunction. Magneto-electrical measurements down to 350 mK are presented and large transconductance oscillations are reported on both outputs up to 4.2 K. Experimental results are interpreted in terms of Coulomb Blockade effect and the relevance of the present design strategy for the implementation of an electronic multiplexer is underlined.Comment: 4 pages, 4 figures, to be published in Applied Physics Letter

Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters

We characterise THz output of lateral photo-Dember (LPD) emitters based on semi-insulating (SI), unannealed and annealed low temperature grown (LTG) GaAs. Saturation of THz pulse power with optical fluence is observed, with unannealed LTG GaAs showing highest saturation fluence at 1.1 ± 0.1 mJ cm-2. SI-GaAs LPD emitters show a flip in signal polarity with optical fluence that is attributed to THz emission from the metal-semiconductor contact. Variation in optical polarisation affects THz pulse power that is attributed to a local optical excitation near the metal contact