Studies on Li3AlF6 thin film deposition utilizing conversion reactions of thin films

Peer reviewe

Resistless fabrication of embedded nanochannels by FIB patterning, wet etching and atomic layer deposition

Self-supported SiO2 structures were fabricated from thermal SiO2/Si substrates by combining FIB direct writing and selective and anisotropic chemical wet etching of silicon. These structures, such as SiO2 overhangs on the edges of Si trenches, were then used as templates for ALD of Ta2O5 to form sealed nanochannels and cavities. The size of trenches formed by etching through openings in the SiO2 increases with FIB patterning ion dose as well as KOH etching time. Channel formation results from sealing the trenches by the conformal ALD of Ta2O5. The KOH etching time determines the channel size while the ion dose determines final wall thickness after ALD. The fabricated hollow nanochannels are embedded under SiO2 and surrounded by Ta2O5 on crystalline Si. The channel size reaches 50 nm by this fabrication approach with a 60 min KOH etching time.Peer reviewe

Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water

Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl) amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined with respect to substrate temperature, precursor doses, and number of ALD cycles. With ozone two ALD windows were observed, between 80 and 100 C and between 125 and 200 C. The films grown on soda lime glass and silicon substrates were uniform across the substrates. With the water process the growth rate at 100–250 C was 0.05–0.18A ° /cycle, and with the ozone process, the growth rate at 80–200 C was 0.05–0.11A ° /cycle. The films were further studied for composition and morphology. The films deposited with water showed crystallinity with the tetragonal SnO phase, and annealing in air increased the conductivity of the films while the SnO2 phase appeared. All the films deposited with ozone contained silicon as an impurity and were amorphous and nonconductive both as-deposited and after annealing. The films were further deposited in TiO2 nanotubes aiming to create a pn-junction which was studied by I-V measurements. The TiO2 nanostructure functioned also as a test structure for conformality of the processes.Peer reviewe

Surface Modification of Acetaminophen Particles by Atomic Layer Deposition

Organic solid pharmaceutical powders are used for the preparation of various drug dosage forms. Primary particles in powder form undergo several processing steps first in pharmaceutical formulations followed by pharmaceutical manufacturing to final dosage form of a drug. These unit operations involve both handling of powders in aqueous or solvent solutions and drying. There will be a probable rise for a demand for the different unit operations in the requirements of protecting the active pharmaceutical ingredient or challenges in powder handling. Besides pharmaceutical manufacturing, there are many biological interfaces where control of surface characteristics of pharmaceutical powders can improve the therapeutic response and bioavailability. In this work, we have modified acetaminophen particles with atomic layer deposition (ALD) by conformal nanometer scale coatings in a one-step coating process. According to the results, ALD comprising common chemistries for Al2O3, TiO2 and ZnO is shown to be a promising coating method for solid pharmaceutical powders. Acetaminophen does not undergo degradation during the ALD coating and maintains its stable polymorphic structure. The nanometer scale ALD coating can sustain the drug release. ALD oxide coated acetaminophen particles show different cytocompatibility assessed in in vitro intestinal Caco-2 cells.Peer reviewe

Scalable Route to the Fabrication of CH3NH3PbI3 Perovskite Thin Films by Electrodeposition and Vapor Conversion

Peer reviewe