120 research outputs found
The Origin of Doping in Quasi-Free Standing Graphene on Silicon Carbide
We explain the robust p-type doping observed for quasi-free standing graphene
on hexagonal silicon carbide by the spontaneous polarization of the substrate.
This mechanism is based on a bulk property of SiC, unavoidable for any
hexagonal polytype of the material and independent of any details of the
interface formation. We show that sign and magnitude of the polarization are in
perfect agreement with the doping level observed in the graphene layer. With
this mechanism, models based on hypothetical acceptor-type defects as they are
discussed so far are obsolete. The n-type doping of epitaxial graphene is
explained conventionally by donor-like states associated with the buffer layer
and its interface to the substrate which overcompensate the polarization
doping.Comment: 10 pages, 1 figur
Atomic Hole Doping of Graphene
Graphene is an excellent candidate for the next generation of electronic
materials due to the strict two-dimensionality of its electronic structure as
well as the extremely high carrier mobility. A prerequisite for the development
of graphene based electronics is the reliable control of the type and density
of the charge carriers by external (gate) and internal (doping) means. While
gating has been successfully demonstrated for graphene flakes and epitaxial
graphene on silicon carbide, the development of reliable chemical doping
methods turns out to be a real challenge. In particular hole doping is an
unsolved issue. So far it has only been achieved with reactive molecular
adsorbates, which are largely incompatible with any device technology. Here we
show by angle-resolved photoemission spectroscopy that atomic doping of an
epitaxial graphene layer on a silicon carbide substrate with bismuth, antimony
or gold presents effective means of p-type doping. Not only is the atomic
doping the method of choice for the internal control of the carrier density. In
combination with the intrinsic n-type character of epitaxial graphene on SiC,
the charge carriers can be tuned from electrons to holes, without affecting the
conical band structure
Systematic Surface Phase Transition of Ag Thin Films by Iodine Functionalization at Room Temperature Evolution of Optoelectronic and Texture Properties
We show a simple room temperature surface functionalization approach using iodine vapour to control a surface phase transition from cubic silver (Ag) of thin films into wurtzite silver-iodid (beta-AgI) films. A combination of surface characterization techniques (optical, electronical and structural characterization) reveal distinct physical properties of the new surface phase. We discuss the AgI thin film formation dynamics and related transformation of physical properties by determining the work-function, dielectric constant and pyroelectric behavior together with morphological and structural thin film properties such as layer thickness, grain structure and texture formation. Notable results are: (i) a remarkable increase of the work-function (by 0.9 eV) of the Ag thin layer after short a iodine exposure time (<= 60 s), with simultaneous increase of the thin film transparency (by two orders of magnitude), (ii) pinning of the Fermi level at the valance band maximum upon iodine functionalization, (iii) 84% of all crystallites grain were aligned as a result of the evolution of an internal electric field. Realizing a nanoscale layer stack composed of a dielectric AgI layer on top of a metallic thin Ag layer with such a simple method has some technological implications e.g. to realize optical elements such as planar optical waveguides
Towards a large-scale quantum simulator on diamond surface at room temperature
Strongly-correlated quantum many-body systems exhibits a variety of exotic
phases with long-range quantum correlations, such as spin liquids and
supersolids. Despite the rapid increase in computational power of modern
computers, the numerical simulation of these complex systems becomes
intractable even for a few dozens of particles. Feynman's idea of quantum
simulators offers an innovative way to bypass this computational barrier.
However, the proposed realizations of such devices either require very low
temperatures (ultracold gases in optical lattices, trapped ions,
superconducting devices) and considerable technological effort, or are
extremely hard to scale in practice (NMR, linear optics). In this work, we
propose a new architecture for a scalable quantum simulator that can operate at
room temperature. It consists of strongly-interacting nuclear spins attached to
the diamond surface by its direct chemical treatment, or by means of a
functionalized graphene sheet. The initialization, control and read-out of this
quantum simulator can be accomplished with nitrogen-vacancy centers implanted
in diamond. The system can be engineered to simulate a wide variety of
interesting strongly-correlated models with long-range dipole-dipole
interactions. Due to the superior coherence time of nuclear spins and
nitrogen-vacancy centers in diamond, our proposal offers new opportunities
towards large-scale quantum simulation at room temperatures
Graphene transistors are insensitive to pH changes in solution
We observe very small gate-voltage shifts in the transfer characteristic of
as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer
is changed. This observation is in strong contrast to Si-based ion-sensitive
FETs. The low gate-shift of a GFET can be further reduced if the graphene
surface is covered with a hydrophobic fluorobenzene layer. If a thin Al-oxide
layer is applied instead, the opposite happens. This suggests that clean
graphene does not sense the chemical potential of protons. A GFET can therefore
be used as a reference electrode in an aqueous electrolyte. Our finding sheds
light on the large variety of pH-induced gate shifts that have been published
for GFETs in the recent literature
N-type graphene induced by dissociative H-2 adsorption at room temperature
Studies of the interaction between hydrogen and graphene have been increasingly required due to the indispensable modulation of the electronic structure of graphene for device applications and the possibility of using graphene as a hydrogen storage material. Here, we report on the behaviour of molecular hydrogen on graphene using the gate voltage-dependent resistance of single-, bi-, and multi-layer graphene sheets as a function of H-2 gas pressure up to 24 bar from 300 K to 345 K. Upon H-2 exposure, the charge neutrality point shifts toward the negative gate voltage region, indicating n-type doping, and distinct Raman signature changes, increases in the interlayer distance of multi-layer graphene, and a decrease in the d-spacing occur, as determined by TEM. These results demonstrate the occurrence of dissociative H-2 adsorption due to the existence of vacancy defects on graphene.open12
Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy
Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T = 200 degrees C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices
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