Frequency- and time-domain simulations of semiconductor optical amplifiers using equivalent circuit modeling

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)We propose an equivalent circuit modeling for a chip-on-carrier and for two encapsulated semiconductor optical amplifiers (SOAs). The models include main parasitic leaks and were used in reflection and transmission simulations, showing good agreement with experimental data. The model for each SOA is validated, comparing the simulated results with experimental data from SOAs operating as high-speed electro-optical switches, reaching rise times below 200 ps. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)We propose an equivalent circuit modeling for a chip-on-carrier and for two encapsulated semiconductor optical amplifiers (SOAs). The models include main parasitic leaks and were used in reflection and transmission simulations, showing good agreement with5411CAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)CNPq [574017/2008-9]FAPESP [2007/56024-4, 2005/51689-2]sem informação574017/2008-92007/56024-4 ; 2005/51689-2The authors thank Professor Adriano Toazza (UPF, RS/Brazil) for the software used to automate the EO transmission measurements. This work was supported in part by the Brazilian agencies CAPES and CNPq (scholarship), CNPq (under INCT-Fotonicom project, 57

Terms of international classification for Nursing Practice in motor and physical rehabilitation

OBJECTIVE To validate terms of nursing language especially for physical-motor rehabilitation and map them to the terms of ICNP® 2.0. METHOD A methodology research based on document analysis, with collection and analysis of terms from 1,425 records. RESULTS 825 terms were obtained after the methodological procedure, of which 226 had still not been included in the ICNP® 2.0. These terms were distributed as follows: 47 on the Focus axis; 15 on the Judgment axis; 31 on the Action axis; 25 on the Location axis; 102 on the Means axis; three on the Time axis; and three on the Client axis. All non-constant terms in ICNP® have been validated by experts, having reached an agreement index ≥0.80. CONCLUSION The ICNP® is applicable and used in nursing care for physical-motor rehabilitation

Comparison of electro-optical switching performances of dissimilar semiconductor optical amplifiers

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)The electro-optical switching performances of four semiconductor optical amplifiers are compared. Devices with distinct physical features, using different pulse formats for the current injection, were evaluated experimentally. The wide range of results might help in indicating preferable devices and pulse formats for a particular application. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1500-1503, 2015The electro‐optical switching performances of four semiconductor optical amplifiers are compared. Devices with distinct physical features, using different pulse formats for the current injection, were evaluated experimentally. The wide range of results mi57615001503CAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)CNPq [574017/2008-9]FAPESP [2007/56024-4, 2005/51689-2]sem informação574017/2008-92007/56024-4 ; 2005/51689-2The authors thank to the Brazilian agencies CAPES (scholar-ship), CNPq (under INCT-Fotonicom project, 574017/2008-9),and FAPESP (under Padtec and CEPOF projects, 2007/56024-4and 2005/51689-2)

Hundred-picoseconds electro-optical switching with semiconductor optical amplifiers using multi-impulse step injection current

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)An ultrafast electro-optical amplified switch based on chip-on-carrier semiconductor optical amplifier with high optical contrast (33 dB) is presented. Switching times up to 115 ps with small overshoot were achieved by using the multi-impulse step injected current technique. These results are compared with previous preimpulse step injected current technique, and achieve a reduction of the inherent, post switching gain fluctuations without worsening the switching times. In addition, pulse formats for controlling such a kind of electro-optical switches are numerically analyzed and compared with experiments.An ultrafast electro-optical amplified switch based on chip-on-carrier semiconductor optical amplifier with high optical contrast (33 dB) is presented. Switching times up to 115 ps with small overshoot were achieved by using the multi-impulse step injecte3316977CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)FAPESP [2007/56024-4]sem informação2007/56024-

Optical Amplitude Modulation Extinction By A Deep Saturated Ultra-long Semiconductor Optical Amplifier.

The recovery of an optical carrier with the deletion of its amplitude modulation is introduced using a deeply saturated ultra-long semiconductor optical amplifier (UL-SOA). The experimental results were achieved for input signal bit rates up to 12.5 Gbps with high extinction ratio (up to 13.9 dB). The influence of parameters such as UL-SOA bias current, optical bandwidth, signal input power, modulation depth and bit rate are analyzed including the carrier spectral broadening effects due to the self-phase modulation effect.1827298-30

Improvements Evaluation of High-Speed Electro-Optical Integrated Thin-Film Microwave Coupler SOA-based Space Switch

Abstract The speed and transient improvements due to a thin- film microwave coupler on a high-speed SOA-based space switch are analyzed. The switch performance is compared with another one using the same SOA device but in its commercial butterfly encapsulated form factor. Through an extensive experimental characterization and an automated algorithm analysis, the switching actions were evaluated in several SOA operational conditions (bias current, electrical pulse step amplitude, preimpulse amplitude, and switching technique) employing metrics related to the switching times and transient behavior intensity. The results showed that the thin-film coupler SOA switch mounting led to switching time improvements and quicker optical output pulse stabilization. In conjunction with the appropriated switching technique, the device could achieve switching speeds around 200 ps aiming its operation in high-speed optical networks