Impact of UV wavelength and curing time on the properties of spin-coated low-k films

Advanced spin-on k 2.3 films with similar to 40% porosity were enabled by liquid phase self-assembly (LPSA) mechanism on Si substrates. UV-assisted thermal template removal is investigated as a faster alternative to the conventional thermal process. The as-deposited films were exposed to narrow-band UV light of 172 nm, 222 nm, 254 nm or 185/254 nm at 400 degrees C for different time. The optical, mechanical, chemical and electrical properties of the resulting films are discussed in this work. Photons with wavelength of about 172 nm from one side are detrimental to the electrical and chemical properties of the low-k films hut from the other side notably improve the porous low-k mechanical properties. Exposure to 222 nm light as short as 3 min, is more efficient in terms of template removal when compared to 2h thermal cure, while in both cases similar mechanical and electrical properties are reported. UV-cure using 254 nm or dual band 254/185 nm photons seem to have a minor contribution to the template removal efficiency for the applied doses. Higher doses are necessary in order to better understand the effective contribution of these photon energies. Finally, the HF etching mechanism is discussed

Laser anneal of oxycarbosilane low-k film

Submilisecond laser anneal has been experimentally investigated for porogen removal and its ability to improve the mechanical strength in oxycarbosilane ultra low-k films compromised due to the introduction of porosity. We report the occurrence of extensive bond rearrangements inferred from Fourier-transform infra-red (FTIR) spectroscopy, elastic recoil detection (ERD) and spectroscopic ellipsometry (SE) in the energy range of 1.4-8 eV. The laser anneal affects most notably the organic content of the organosilicate matrix leading to depletion and reorganization. Nevertheless, the tested conditions reveal a processing window which allows for 13% improvement of Young’s modulus as compared to the reference film, annealed in a conventional furnace at 400°C for 2 h, while not impacting the relative dielectric constant of 2.25