Lithography-Free, Omnidirectional, CMOS-Compatible AlCu Alloys for Thin-Film Superabsorbers

Superabsorbers based on metasurfaces have recently enabled the control of light at the nanoscale in unprecedented ways. Nevertheless, the sub‐wavelength features needed to modify the absorption band usually require complex fabrication methods, such as electron‐beam lithography. To overcome the scalability limitations associated with the fabrication of metallic nanostructures, engineering the optical response of superabsorbers by metal alloying is proposed, instead of tuning the geometry/size of the nanoscale building blocks. The superior performance of thin film AlCu alloys as the metallic component of planar bilayer superabsorbers is numerically demonstrated. This alloy outperforms its pure constituents as well as other metals, such as Ag, Au, and Cr. As a model system, a Si/AlCu structure is analyzed that presents \u3e99% absorption at selected wavelength ranging from the visible to the near‐infrared regions of the spectrum, depending on the subwavelength thickness of the semiconductor. The multi‐wavelength near‐unity absorption behavior of Si/AlCu persists even for oblique angle of incidence, up to 70°. Additionally, the findings are validated by fabricating and testing a‐Si/AlCu superabsorbers, where good agreement is found between the numerically and experimentally determined optical response. The system investigated here is relevant for integration in complementary metal‐oxide‐semiconductor (CMOS) technologies

Spin-polarization in quantum wires: Influence of Dresselhaus spin-orbit interaction and cross-section effects

We examine the effects of the full Dresselhaus spin-orbit coupling on laterally confined quantum wire states. An analysis of the relative contributions due to linear, quadratic, and cubic Dresselhaus spin-orbit terms on the energy levels, spin splitting, and spin polarization has been carried out. The effects of wire cross-sectional geometry shapes on the electronic structure are explored. In particular we compared the results of semicylindrical and cylindrical confinements and have found important differences between the spin degeneracy of the ground-state level and the spin-polarization dependence on sign inversion of the free linear momentum quantum number along the wire axis. Different from other symmetries, in both cases here considered, the stronger spin-splitting effects come from the quadratic Dresselhaus term. We report ideal conditions for realization of spin-field filter devices based on symmetry properties of the spin splitting of the ground state in semicylindrical quantum wires

Photocurrent-voltage relation of resonant tunneling diode photodetectors

We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ = 1.3 µm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV(V) of the current-voltage curve, which depends strongly on the bias voltage V. A model is proposed describing ΔV(V) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency ƞ(V), the lifetime of photogenerated and accumulated charge carriers τ(V), and the RTD current-voltage relation in the dark determines best working parameters of RTD photodetectors. Limitations and voltage dependencies of the photoresponse are discussed

Electron transport in quantum dot chains: Dimensionality effects and hopping conductance

Detailed experimental and theoretical studies of lateral electron transport in a system of quantum dot chains demonstrate the complicated character of the conductance within the chain structure due to the interaction of conduction channels with different dimensionalities. The one-dimensional character of states in the wetting layer results in an anisotropic mobility, while the presence of the zero-dimensional states of the quantum dots leads to enhanced hopping conductance, which affects the low-temperature mobility and demonstrates an anisotropy in the conductance. These phenomena were probed by considering a one-dimensional model of hopping along with band filling effects. Differences between the model and the experimental results indicate that this system does not obey the simple one-dimensional Mott\u27s law of hopping and deserves further experimental and theoretical considerations

Estudo de efeitos quânticos nas propriedades eletrônicas de nanofios semicondutores

The growth and characterization of semiconductor nanowires systems have attracted increasing interest due to their potential technological application, like, photo-detectors, optoelectronic devices and their promising features for quantum information processing and photonic applications. The goal of this work is the characterization of properties of semiconductor nanowires. The study was started within the framework of classical electrodynamics and this model for light-scattering was contrasted with experimental results from the photoluminescence. This classical model has been published in the literature without a concrete discussion and its application range is often not compatible with the analyzed experimental phenomenology. Thus, we have introduced quantum elements to elucidate a consistent phenomenology with the results obtained in the experiments. Through the k.p method, using in particular the Luttinger Hamiltonian, the effects of biaxial confinement and strain were analyzed in the valence band of semiconductor nanowires. This study was complemented with the description of optical properties. For the conduction band states, we were able to introduce the spin-orbit interaction since analytical results, successfully obtained from the simulation of the valence band, could be directly used in this new calculation.Universidade Federal de Sao CarlosOs estudos recentes, tanto da síntese quanto da caracterização, de sistemas de nanofios semicondutores se tornaram atraentes devido sua importância tecnológica na construção de fotodetectores, dispositivos opto-eletrônicos e seu uso potencial no processamento de informação quântica e aplicações fotônicas. O presente trabalho propõe a caracterização de propriedades de nanofios semicondutores. Iniciou-se o estudo nos marcos da eletrodinâmica clássica, no qual o espalhamento da luz foi contrastado com resultados experimentais de fotoluminescência encontrados na literatura. Os modelos clássicos aparecem na literatura sem uma discussão procedente e seus marcos de aplicação muitas vezes não são compatíveis com a fenomenologia experimental analisada. Assim, nos foi possível introduzir elementos quânticos para elucidarmos uma fenomenologia coerente com os resultados obtidos pelos nossos colaboradores experimentais. Através do método k.p, em particular pelo Hamiltoniano de Luttinger, analisamos os efeitos do confinamento biaxial e de strain na banda de valência de nanofios semicondutores. Complementando a abordagem de propriedades óticas, finalizamos esta dissertação analisando os efeitos da interação spin-órbita na banda de condução, uma vez que os resultados analíticos, satisfatoriamente obtidos para o estudo da banda de valência, poderiam ser utilizados nesse novo cálculo

Transport phenomena in quasi-one-dimensional heterostructures

O crescimento e caracterização de sistemas de heteroestruturas semicondutoras quasi-unidimensionais têm atraído grande interesse devido à sua potencial de aplicação tecnológica, como foto-detectores, dispositivos opto-eletrônicos assim como seu para o processamento de informação quântica e aplicações em fotônica. O objetivo desta tese é o estudo das propriedades de transporte eletrônico e de spin em sistemas semicondutores quasi-unidimensionais, especificamente trataremos de nanofios (NWs) homogêneos, NWs acoplados, NWs do tipo plano-geminado (TP), diodos de tunelamento ressonante (ETD) e cadeias de pontos quânticos (QDCS). Escolhemos o método k-p, particularmente o Hamiltoniano de Luttinger, para descrever os efeitos de confinamento e tensão biaxial. Este sugeriu uma modulação do caráter do estado fundamental que, complementada com a dinâmica fônons fornecidas pelas simulações da Dinâmica Molecular (MD), permitiu a descrição da modulação da mobilidade de buracos por emissão ou absorção de fônons. Em relação ao sistema de NWs acoplado,estudamos, através do método da matriz de transferência (TMM), as propriedades de transporte de elétrons e spin sob a interação de spin-órbita (SOI) de Eashba, localizada na região de acoplamento entre fios. Foram consideradas várias configurações de tensões de gate (Vg) aplicadas nos fios. Desse modo, compreendemos a modulação do transporte de spin quando esse é projetado no direção-z através da combinação do SOI e das dimensionalidades do sistema. Da mesma forma, a combinação de SOI e da Vg aplicada deu origem a modulação da polarização, quando o spin medido é projetado na mesma direção em que o SOI de Eashba atua, a direção y. Usando o TMM, exploramos as propriedades de transporte de um DBS e o efeito de uma resistência em série com o intuito de provar a natureza da biestabilidade das curvas características I V bem como o aumento de sua área com temperatura, resultados fornecidos por experimentos. O modelo indicou que aumentando da resistência pela diminuição sa temperatura aumenta a área biestável. A presença de uma hetero-junção adicional ao sistema induz uma densidade de carga nas suas interfaces. De acordo com esta configuração, a queda de tensão total do ETDS muda, podendo ser confirmada experimentalmente. A formação dos peculiares campos de deformação e sua influência sobre a estrutura eletrônicas e propriedades de transporte em superredes de TP foi estudada sistematicamente. Assim, as propriedades de transporte, de ambos os elétrons e buracos, pode ser sintonizada eficientemente, mesmo no caso de elétrons r em sistemas de blenda de zinco, contrastando com a prevista transparência de elétrons r em superredes de semicondutores III-V heteroestruturados. Além disso, constatamos que a probabilidade de transmissão para buracos da banda de valência também poderia ser efetivamente modificada através de uma tensão externa.Por fim, colaboradores sintetizaram com sucesso sistemas de QDCs de InGaAs através da epitaxia de feixe molecular e engenharia de tensão. Um comportamento anisotrópico da condutância com a temperatura foi observado em QDCs com diferentes concentrações de dopagem, medida realizada ao longo e entre os QDCs. O modelo teórico 1D de hoppíng desenvolvido mostrou que a presença de estados OD modela a resposta anisotrópica da condutância neste sistemas.Universidade Federal de Sao CarlosThe growth and characterization of semiconductor quasi-one-dimensional heterostructure systems have attracted increasing interest due to their potential technological application, like photo-detectors, optoelectronic devices and their promising features for quantum information processing and photonic applications. The goal of this thesis is the study of electronic and spin transport properties on quasi-one-dimensional semiconductor systems; specifically, homogenous nanowires (NWs), coupled NW s, twin-plane (TP) NWs, resonant tunneling diodes (RTDs), and quantum dot chains (QDCs). The k-p method, in particular the Luttinger Hamiltonian, was chosen to describe the effects of biaxial confinement and strain. This suggested a modulation of the ground state character that, complemented with the phonon dynamics provided by Molecular Dynamics (MD) simulations, allowed the description of the hole mobility modulation by either phonon emission or absorption. Regarding the coupled NW s system, the electron and spin transport properties affected by a Rashba spin-orbit interaction (SOI) at the joined region were unveiled through the Transfer Matrix Method (TMM). Various configurations of gate voltages (Vg), applied on the wire structure, were considered. We were able to understand the modulation of the spin transport projected in the z-direction trough the combination of the SOI and the system dimensionalities. Likewise, the combination of SOI and applied Vg gave rise to a modulation of the polarization, when the measured spin is projected in the same direction where the Rashba SOI acts, the y-direction. The transport properties of a DBS and the effect of a resistance in series was explored within the TMM to prove the nature of a bistability of the I V characteristics and its enhanced area with temperature provided by the experiment. The model indicates that increasing the resistente by decreasing the temperature, the bistable area enhances. The presence of an additional heterojunction induces a sheet charge at its interfaces. Under this configuration, the total voltage drop of the RTD changes and can be confirmed experimentally.The formation of the peculiar strain fields and their influence on the electronic structure and transport properties of a TP superlattice was systematically studied. Hence, the transport properties of both electrons and holes could be effectively tuned even in the case of T-electrons of zincblende systems, contrasting to the predicted transparency of T-electrons in heterolayered III-V semiconductor superlattices. Also, the transmission probability for holes at valence band could also be effectively modified by applying an external stress. Finally, using molecular-beam-epitaxy and skillful strain engineering, systems of In-GaAs QDCs were successfully synthesized by collaborators. The QDCs with different doping concentrations showed an anisotropic behavior of the conductance, measured along and across the QDCs, with temperature. The theoretical ID hopping model developed found that the presence of OD states shapes the anisotropic response of the conductance in this system

Refractory Metals and Oxides for High-Temperature Structural Color Filters

Refractory metals have recently garnered significant interest as options for photonic applications due to their superior high-temperature stability and versatile optical properties. However, most previous studies only consider their room-temperature optical properties when analyzing these materials’ behavior as optical components. Here, we demonstrate structural color pixels based on three refractory metals (Ru, Ta, and W) for high-temperature applications. We quantify their optical behavior in an oxygenated environment and determine their dielectric functions after heating up to 600 °C. We use in situ oxidation, a fundamental chemical reaction, to form nanometer-scale metal oxide thin-film bilayers on each refractory metal. We fully characterize the behavior of the newly formed thin-film interference structures, which exhibit vibrant color changes upon high-temperature treatment. Finally, we present optical simulations showing the full range of hues achievable with a simple two-layer metal oxide/metal reflector structure. All of these materials have melting points >1100 °C, with the Ta-based structure offering high-temperature stability, and the Ru- and W-based options providing an alternative for reversible color filters, at high temperatures in inert or vacuum environments. Our approach is uniquely suitable for high-temperature photonics, where the oxides can be used as conformal coatings to produce a wide variety of colors across a large portion of the color gamut