Far Infrared Synchrotron Near-Field Nanoimaging and Nanospectroscopy

Scattering scanning near-field optical microscopy (s-SNOM) has emerged as a powerful imaging and spectroscopic tool for investigating nanoscale heterogeneities in biology, quantum matter, and electronic and photonic devices. However, many materials are defined by a wide range of fundamental molecular and quantum states at far-infrared (FIR) resonant frequencies currently not accessible by s-SNOM. Here we show ultrabroadband FIR s-SNOM nanoimaging and spectroscopy by combining synchrotron infrared radiation with a novel fast and low-noise copper-doped germanium (Ge:Cu) photoconductive detector. This approach of FIR synchrotron infrared nanospectroscopy (SINS) extends the wavelength range of s-SNOM to 31 μm (320 cm-1, 9.7 THz), exceeding conventional limits by an octave to lower energies. We demonstrate this new nanospectroscopic window by measuring elementary excitations of exemplary functional materials, including surface phonon polariton waves and optical phonons in oxides and layered ultrathin van der Waals materials, skeletal and conformational vibrations in molecular systems, and the highly tunable plasmonic response of graphene

Smart Scattering Scanning Near-Field Optical Microscopy

Scattering scanning near-field optical microscopy (s-SNOM) provides spectroscopic imaging from molecular to quantum materials with few nanometer deep subdiffraction limited spatial resolution. However, in its conventional implementation s-SNOM is slow to effectively acquire a series of spatio-spectral images, especially with large fields of view. This problem is further exacerbated for weak resonance contrast or when using light sources with limited spectral irradiance. Indeed, the generally limited signal-to-noise ratio prevents sampling a weak signal at the Nyquist sampling rate. Here, we demonstrate how acquisition time and sampling rate can be significantly reduced by using compressed sampling, matrix completion, and adaptive random sampling, while maintaining or even enhancing the physical or chemical image content. We use fully sampled real data sets of molecular, biological, and quantum materials as ground-truth physical data and show how deep under-sampling with a corresponding reduction of acquisition time by 1 order of magnitude or more retains the core s-SNOM image information. We demonstrate that a sampling rate of up to 6× smaller than the Nyquist criterion can be applied, which would provide a 30-fold reduction in the data required under typical experimental conditions. Our smart s-SNOM approach is generally applicable and provides systematic full spatio-spectral s-SNOM imaging with a large field of view at high spectral resolution and reduced acquisition time

Synchrotron infrared nano-spectroscopy and -imaging

Infrared (IR) spectroscopy has evolved into a powerful analytical technique to probe molecular and lattice vibrations, low-energy electronic excitations and correlations, and related collective surface plasmon, phonon, or other polaritonic resonances. In combination with scanning probe microscopy, near-field infrared nano-spectroscopy and -imaging techniques have recently emerged as a frontier in imaging science, enabling the study of complex heterogeneous materials with simultaneous nanoscale spatial resolution and chemical and quantum state spectroscopic specificity. Here, we describe synchrotron infrared nano-spectroscopy (SINS), which takes advantage of the low-noise, broadband, high spectral irradiance, and coherence of synchrotron infrared radiation for near-field infrared measurements across the mid- to far-infrared with nanometer spatial resolution. This powerful combination provides a qualitatively new form of broadband spatio-spectral analysis of nanoscale, mesoscale, and surface phenomena that were previously difficult to study with IR techniques, or even any form of micro-spectroscopy in general. We review the development of SINS, describe its technical implementations, and highlight selected examples representative of the rapidly growing range of applications in physics, chemistry, biology, materials science, geology, and atmospheric and space sciences

Amplitude- and Phase-Resolved Nanospectral Imaging of Phonon Polaritons in Hexagonal Boron Nitride

Phonon polaritons are quasiparticles resulting from strong coupling of photons with optical phonons. Excitation and control of these quasiparticles in 2D materials offer the opportunity to confine and transport light at the nanoscale. Here, we image the phonon polariton (PhP) spectral response in thin hexagonal boron nitride (hBN) crystals as a representative 2D material using amplitude- and phase-resolved scattering scanning near-field optical microscopy (s-SNOM) using broadband mid-IR synchrotron radiation. The large spectral bandwidth enables the simultaneous measurement of both out-of-plane (780 cm-1) and in-plane (1370 cm-1) hBN phonon modes. In contrast to the strong in-plane mode, the out-of-plane PhP mode response is weak. Measurements of the PhP wavelength reveal a proportional dependence on sample thickness for thin hBN flakes, which can be understood by a general model describing two-dimensional polariton excitation in ultrathin materials

Anisotropic Flow Control and Gate Modulation of Hybrid Phonon-Polaritons

Light-matter interaction in two-dimensional photonic or phononic materials allows for the confinement and manipulation of free-space radiation at sub-wavelength scales. Most notably, the van der Waals heterostructure composed of graphene (G) and hexagonal boron nitride (hBN) provides for gate-tunable hybrid hyperbolic plasmon phonon-polaritons (HP 3 ). Here, we present the anisotropic flow control and gate-voltage modulation of HP 3 modes in G-hBN on an air-Au microstructured substrate. Using broadband infrared synchrotron radiation coupled to a scattering-type near-field optical microscope, we launch HP 3 waves in both hBN Reststrahlen bands and observe directional propagation across in-plane heterointerfaces created at the air-Au junction. The HP 3 hybridization is modulated by varying the gate voltage between graphene and Au. This modifies the coupling of continuum graphene plasmons with the discrete hBN hyperbolic phonon polaritons, which is described by an extended Fano model. This work represents the first demonstration of the control of polariton propagation, introducing a theoretical approach to describe the breaking of the reflection and transmission symmetry for HP 3 modes. Our findings augment the degree of control of polaritons in G-hBN and related hyperbolic metamaterial nanostructures, bringing new opportunities for on-chip nano-optics communication and computing

Observation of Diode Behavior and Gate Voltage Control of Hybrid Plasmon-Phonon Polaritons in Graphene-Hexagonal Boron Nitride Heterostructures

Light-matter interaction in two-dimension photonic materials allows for confinement and control of free-space radiation on sub-wavelength scales. Most notably, the van der Waals heterostructure obtained by stacking graphene (G) and hexagonal Boron Nitride (hBN) can provide for hybrid hyperbolic plasmon phonon-polaritons (HP3). Here, we present a polariton diode effect and low-bias control of HP3 modes confined in G-hBN. Using broadband infrared synchrotron radiation coupled to a scattering-type near-field optical microscope, we launch HP3 waves over both hBN Reststrahlen bands and observe the unidirectional propagation of HP3 modes at in-plane heterointerfaces associated with the transition between different substrate dielectrics. By electric gating we further control the HP3 hybridization modifying the coupling between the continuum graphene plasmons and the discrete hyperbolic phonon polaritons of hBN as described by an extended Fano model. This is the first demonstration of unidirectional control of polariton propagation, with break in reflection/transmission symmetry for HP3 modes. G-hBN and related hyperbolic metamaterial nanostructures can therefore provide the basis for novel logic devices of on-chip nano-optics communication and computing

Nanoimaging of Electronic Heterogeneity in Bi2Se3 and Sb2Te3 Nanocrystals

Topological insulators (TIs) are quantum materials with topologically protected surface states surrounding an insulating bulk. However, defect-induced bulk conduction often dominates transport properties in most TI materials, obscuring the Dirac surface states. In order to realize intrinsic topological insulating properties, it is thus of great significance to identify the spatial distribution of defects, understand their formation mechanism, and finally control or eliminate their influence. Here, the electronic heterogeneity in polyol-synthesized Bi2Se3 and chemical vapor deposition-grown Sb2Te3 nanocrystals is systematically investigated by multimodal atomic-to-mesoscale resolution imaging. In particular, by combining the Drude response sensitivity of infrared scattering-type scanning near-field optical microscopy with the work-function specificity of mirror electron microscopy, characteristic mesoscopic patterns are identified, which are related to carrier concentration modulation originating from the formation of defects during the crystal growth process. This correlative imaging and modeling approach thus provides the desired guidance for optimization of growth parameters, crucial for preparing TI nanomaterials to display their intrinsic exotic Dirac properties