Tunable orbital susceptibility in α\alpha-T3{\cal T}_3 tight-binding models

We study the importance of interband effects on the orbital susceptibility of three bands $\alpha$-${\cal T}_3$ tight-binding models. The particularity of these models is that the coupling between the three energy bands (which is encoded in the wavefunctions properties) can be tuned (by a parameter $\alpha$) without any modification of the energy spectrum. Using the gauge-invariant perturbative formalism that we have recently developped, we obtain a generic formula of the orbital susceptibility of $\alpha$-${\cal T}_3$ tight-binding models. Considering then three characteristic examples that exhibit either Dirac, semi-Dirac or quadratic band touching, we show that by varying the parameter $\alpha$ and thus the wavefunctions interband couplings, it is possible to drive a transition from a diamagnetic to a paramagnetic peak of the orbital susceptibility at the band touching. In the presence of a gap separating the dispersive bands, we show that the susceptibility inside the gap exhibits a similar dia to paramagnetic transition.Comment: 15 pages,5 figs. Proceedings of the International Workshop on Dirac Electrons in Solids 2015Proceedings of the International Workshop on Dirac Electrons in Solids 201

A Direct Real-Time Observation of Anion Intercalation in Graphite Process and Its Fully Reversibility by SAXS/WAXS Techniques

The process of anion intercalation in graphite and its reversibility plays a crucial role in the next generation energy-storage devices. Herein the reaction mechanism of the aluminum graphite dual ion cell by operando X-ray scattering from small angles to wide angles is investigated. The staging behavior of the graphite intercalation compound (GIC) formation, its phase transitions, and its reversible process are observed for the first time by directly measuring the repeated intercalation distance, along with the microporosity of the cathode graphite. The investigation demonstrates complete reversibility of the electrochemical intercalation process, alongside nano- and micro-structural reorganization of natural graphite induced by intercalation. This work represents a new insight into thermodynamic aspects taking place during intermediate phase transitions in the GIC formation

XRD TEM EELS Studies on Memory Device Structures

Over the past decade, numerous emerging memory technologies are being considered as contenders to displace either or both NAND flash and DRAM as scaling limitations of these conventional memories are perceived for applications in mobile devices. Some of these include Magnetic and Spin Transfer Torque Random Access Memory MRAM, STTRAM , Phase Change RAM PCRAM , Ferroelectric RAM and Resistive RAM memories. These technologies can be classified as relying on one of the movements atomic, ionic, electron charge or spin in nanoscale thin films comprising of a variety of materials. The literature shows about 50 elements of the periodic table being investigated for these memory applications owing to their unique physical and chemical properties. Engineering memory devices requires nanoscale characterizations of film stacks for their chemical compositions and crystalline nature in addition to electronic properties such as resistance, magnetization and polarization depending upon the principle involved. This paper focuses on how x ray diffraction XRD , transmission electron microscopy TEM and electron energy loss spectroscopy EELS techniques have been employed to obtain insight into engineering magnetic tunnel junctions MTJ and PCM device

Influence of the electrode nano/microstructure on the electrochemical properties of graphite in aluminum batteries

Herein we report on a detailed investigation of the irreversible capacity in the first cycle of pyrolytic graphite electrodes in aluminum batteries employing 1-ethyl-3-methylimidazolium chloride:aluminum trichloride (EMIMCl:AlCl3) as electrolyte. The reaction mechanism, involving the intercalation of AlCl4- in graphite, has been fully characterized by correlating the micro/nanostructural modification to the electrochemical performance. To achieve this aim a combination of X-ray diffraction (XRD), small angle X-ray scattering (SAXS) and computed tomography (CT) has been used. The reported results evidence that the irreversibility is caused by a very large decrease in the porosity, which consequently leads to microstructural changes resulting in the trapping of ions in the graphite. A powerful characterization methodology is established, which can also be applied more generally to carbon-based energy-related materials

Application of third generation synchrotron source to studies of noncrystalline materials : In-Se amorphous films

The local structure of vacuum evaporated In-Se amorphous films, containing 50, 60, and 66 at .% Se, was studied using differential anomalous X -ray scattering and extended X -ray absorption fine structure. Both intensity and absorption spectra were measured in the vicinity of the absorption K -edge of Se. The differential anomalous X -ray scattering data were converted to real space by the inverse Fourier transform yielding the differential radial distribution functions. The obtained results provide evidence for the presence of Se-In spatial correlations for In5 0 Se50 and Se-In and Se-Se correlations for In40 Se60 and In34 Se66 within the first coordination sphere

Crystallization of Ge2Sb2Te5 films by amplified femtosecond optical pulses

Copyright © 2012 American Institute of PhysicsThe phase transition between the amorphous and crystalline states of Ge2Sb2Te5 has been studied by exposure of thin films to series of 60 femtosecond (fs) amplified laser pulses. The analysis of microscope images of marks of tens of microns in size provide an opportunity to examine the effect of a continuous range of optical fluence. For a fixed number of pulses, the dependence of the area of the crystalline mark upon the fluence is well described by simple algebraic results that provide strong evidence that thermal transport within the sample is one-dimensional (vertical). The crystalline mark area was thus defined by the incident fs laser beam profile rather than by lateral heat diffusion, with a sharp transition between the crystalline and amorphous materials as confirmed from line scans of the microscope images. A simplified, one-dimensional model that accounts for optical absorption, thermal transport and thermally activated crystallization provides values of the optical reflectivity and mark area that are in very good quantitative agreement with the experimental data, further justifying the one-dimensional heat flow assumption. Typically, for fluences below the damage threshold, the crystalline mark has annular shape, with the fluence at the centre of the irradiated mark being sufficient to induce melting. The fluence at the centre of the mark was correlated with the melt depth from the thermal model to correctly predict the observed melt fluence thresholds and to explain the closure and persistence of the annular crystalline marks as functions of laser fluence and pulse number. A solid elliptical mark may be obtained for smaller fluences. The analysis of marks made by amplified fs pulses present a new and effective means of observing the crystallization dynamics of phase-change material at elevated temperatures near the melting point, which provided estimates of the growth velocity in the range 7-9 m/s. Furthermore, finer control over the crystallization process in phase-change media can be obtained by controlling the number of pulses which, along with the laser fluence, can be tailored to any medium stack with relaxed restrictions on the thermal properties of the layers in the stack

Threshold switching via electric field induced crystallization in phase-change memory devices

Copyright © 2012 American Institute of PhysicsPhase-change devices exhibit characteristic threshold switching from the reset (off) to the set (on) state. Mainstream understanding of this electrical switching phenomenon is that it is initiated electronically via the influence of high electric fields on inter-band trap states in the amorphous phase. However, recent work has suggested that field induced (crystal) nucleation could instead be responsible. We compare and contrast these alternative switching “theories” via realistic simulations of device switching both with and without electric field dependent contributions to the system free energy. Results show that although threshold switching can indeed be obtained purely by electric field induced nucleation, the fields required are significantly larger than experimentally measured values