Technologies for 3D Heterogeneous Integration

3D-Integration is a promising technology towards higher interconnect densities and shorter wiring lengths between multiple chip stacks, thus achieving a very high performance level combined with low power consumption. This technology also offers the possibility to build up systems with high complexity just by combining devices of different technologies. For ultra thin silicon is the base of this integration technology, the fundamental processing steps will be described, as well as appropriate handling concepts. Three main concepts for 3D integration have been developed at IZM. The approach with the greatest flexibility called Inter Chip Via - Solid Liquid Interdiffusion (ICV-SLID) is introduced. This is a chip-to-wafer stacking technology which combines the advantages of the Inter Chip Via (ICV) process and the solid-liquid-interdiffusion technique (SLID) of copper and tin. The fully modular ICV-SLID concept allows the formation of multiple device stacks. A test chip was designed and the total process sequence of the ICV-SLID technology for the realization of a three-layer chip-to-wafer stack was demonstrated. The proposed wafer-level 3D integration concept has the potential for low cost fabrication of multi-layer high-performance 3D-SoCs and is well suited as a replacement for embedded technologies based on monolithic integration. To address yield issues a wafer-level chip-scale handling is presented as well, to select known-good dies and work on them with wafer-level process sequences before joining them to integrated stacks.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838

Many-body wave scattering by small bodies

Scattering problem by several bodies, small in comparison with the wavelength, is reduced to linear algebraic systems of equations, in contrast to the usual reduction to some integral equations

Wave scattering by small bodies and creating materials with a desired refraction coefficient

Asymptotic solution to many-body wave scattering problem is given in the case of many small scatterers. The small scatterers can be particles whose physical properties are described by the boundary impedances, or they can be small inhomogeneities, whose physical properties are described by their refraction coefficients. Equations for the effective field in the limiting medium are derived. The limit is considered as the size $a$ of the particles or inhomogeneities tends to zero while their number $M(a)$ tends to infinity. These results are applied to the problem of creating materials with a desired refraction coefficient. For example, the refraction coefficient may have wave-focusing property, or it may have negative refraction, i.e., the group velocity may be directed opposite to the phase velocity. This paper is a review of the author's results presented in MR2442305 (2009g:78016), MR2354140 (2008g:82123), MR2317263 (2008a:35040), MR2362884 (2008j:78010), and contains new results.Comment: In this paper the author's invited plenary talk at the 7-th PACOM (PanAfrican Congress of Mathematicians), is presente

Electromagnetic wave scattering by many conducting small particles

A rigorous theory of electromagnetic (EM) wave scattering by small perfectly conducting particles is developed. The limiting case when the number of particles tends to infinity is discussed

Spectroscopy of annular drums and quantum rings: perturbative and nonperturbative results

We obtain systematic approximations to the states (energies and wave functions) of quantum rings (annular drums) of arbitrary shape by conformally mapping the annular domain to a simply connected domain. Extending the general results of Ref.\cite{Amore09} we obtain an analytical formula for the spectrum of quantum ring of arbirtrary shape: for the cases of a circular annulus and of a Robnik ring considered here this formula is remarkably simple and precise. We also obtain precise variational bounds for the ground state of different quantum rings. Finally we extend the Conformal Collocation Method of \cite{Amore08,Amore09} to the class of problems considered here and calculate precise numerical solutions for a large number of states ($\approx 2000$).Comment: 12 pages, 12 figures, 2 table

Transition From Quantum To Quasi-classical Behaviour Of The Binary Encounter Peak In Collisions Of 0.6 To 3.6 Mev Amu“¹ I23+ And Xe21+ With He And Ar

Double differentia] cross sections are reported for the production of binary encounter electrons in collisions of 0.6 MeV amu-1 I23+ and 1.4, 2.4, and 3.6 MeV amu-1 Xe21+ projectiles incident on He and Ar targets. Electron energy spectra were measured between 0: and 45: in the case of the two lower projectile energies, and between 17.5° and 60- for the two higher projectile energies. The data are compared with quantum mechanical impulse approximation and classical trajectory Monte Carlo calculations. While the quantum model calculation predicts a rapid disappearance of diffraction effects in the binary encounter peak with increasing projectile energy, these remain visible in the experimental results up to the highest energy measured. The necessity of including multiple target ionization involving inner shell electrons in the theoretica] description of the collision process is demonstrated by the classical trajectory Monte Carlo calculation, which accounts well for the shape of the 2.4 and 3.6 MeV amu-1 cross sections, except at angles where diffraction effects are manifest. Systematic shifts of the binary encounter peak position towards lower energies with increasing emission angle were observed for all projectile energies. © 1993 IOP Publishing Ltd