22,511 research outputs found
Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks
In the present work we investigate the dielectric relaxation effects and
charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge
substrates. The MOS devices have been subjected to constant voltage stress
(CVS) conditions at accumulation and show relaxation effects in the whole range
of applied stress voltages. Applied voltage polarities as well as thickness
dependence of the relaxation effects have been investigated. Charge trapping is
negligible at low stress fields while at higher fields (>4MV/cm) it becomes
significant. In addition, we give experimental evidence that in tandem with the
dielectric relaxation effect another mechanism- the so-called Maxwell-Wagner
instability- is present and affects the transient current during the
application of a CVS pulse. This instability is also found to be field
dependent thus resulting in a trapped charge which is negative at low stress
fields but changes to positive at higher fields.Comment: 27pages, 10 figures, 3 tables, regular journal contribution (accepted
in IEEE TED, Vol.50, issue 10
Poster: Improving Bug Localization with Report Quality Dynamics and Query Reformulation
Recent findings from a user study suggest that IR-based bug localization
techniques do not perform well if the bug report lacks rich structured
information such as relevant program entity names. On the contrary, excessive
structured information such as stack traces in the bug report might always not
be helpful for the automated bug localization. In this paper, we conduct a
large empirical study using 5,500 bug reports from eight subject systems and
replicating three existing studies from the literature. Our findings (1)
empirically demonstrate how quality dynamics of bug reports affect the
performances of IR-based bug localization, and (2) suggest potential ways
(e.g., query reformulations) to overcome such limitations.Comment: The 40th International Conference on Software Engineering (Companion
volume, Poster Track) (ICSE 2018), pp. 348--349, Gothenburg, Sweden, May,
201
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