Indium Arsenide Solid Solutions: Devices Based on InGaAs(P)

This paper is a review of literature and data dealing with the properties of indium arsenide-based solid solutions and several devices on InGaAs(P)/ZnP heterostructures. Possible practical applications of the 111 V-II12VI,heterostructures are indicated.The most interesting results obtained in the fabrication of high quality heterostructures, including modulation-doped and quantum-dimensional ones are demonstrated. The epitaxial methods bsed for the production of heterostructures are comparatively analised. Data about applicability ofepitaxial methodsfor fabrication ofdifferent device structures are reported.An interesting 'cleaning' effect taking place at the InGaAs(P) crystallization by LPE from solutions containing rare-earth elements is described.A review of recently published works on fabrication of effective FET ismade. The HEMT technology thought to be the most promising one, issupposed to contribute to a qualitatively new development stage of large integral circuits on A3B5, while a combination of HEMT with thetechnology of quantum-dimensional lasers is expected to accelerate thecreation of high speed response integral circuits

Structural and electrical properties of ZnS/CdTe and ZnTe/CdTe heterostructures

We investigated the structural, substructural and electrical properties of ZnS/CdTe and ZnTe/CdTe heterostructures obtained by the close-spaced vacuum sublimation. It was found that the structural properties of CdTe and ZnTe thin films deposited on ZnS or CdTe sublayers are better than those of the films obtained on glass substrate at the same growth conditions. XRD-analysis has shown that Zn(x)Cd(1- x)Te(x = 0.21-0.30) solid solutions having the cubic phase were formed near the films’ interfaces. Furthermore, the saturation current, the ideality factor and the value of the potential barrier height were determined by the analysis of dark currentevoltage characteristics. This makes it possible to establish optimal growth conditions of ZnS/CdTe heterojunctions. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3016

Lattice dynamics study of HgGa2Se4 at high pressures

We report on Raman scattering measurements in mercury digallium selenide (HgGa2Se4) up to 25 GPa. We also performed, for the low-pressure defect-chalcopyrite structure, lattice-dynamics ab initio calculations at high pressures which agree with experiments. Measurements evidence that the semiconductor HgGa2Se4 exhibits a pressure-induced phase transition above 19 GPa to a previously undetected structure. This transition is followed by a transformation to a Raman-inactive phase above 23.4 GPa. On downstroke from 25 GPa until 2.5 GPa, a broad Raman spectrum was observed, which has been attributed to a fourth phase, and whose pressure dependence was followed during a second upstroke. Candidate structures for the three phases detected under compression are proposed. Finally, we also report and discuss the decomposition of the sample by laser heating at pressures close to 19 GPa. As possible products of decomposition, we have identified at least the formation of trigonal selenium nanoclusters and cinnabar-type HgSe.This study was supported by the Spanish government MEC under Grant No. MAT2010-21270-004-01/03/04, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), by Generalitat Valenciana through project GVA-ACOMP-2013-012, and by the Vicerrectorado de Investigacion y Desarrollo of the Universidad Politecnica de Valencia (UPV2011-0966 and UPV2011-0914). E.P.-G., J.L.-S., A.M., and P.R.-H. acknowledge computing time provided by Red Espanola de Super-computacion (RES) and MALTA-Cluster.Vilaplana Cerda, RI.; Gomis Hilario, O.; Manjón Herrera, FJ.; Ortiz, HM.; Pérez González, E.; López Solano, J.; Rodríguez Hernández, P.... (2013). Lattice dynamics study of HgGa2Se4 at high pressures. Journal of Physical Chemistry C. 117(30):15773-15781. https://doi.org/10.1021/jp402493rS15773157811173