38 research outputs found
Inkjet-printed vertically emitting solid-state organic lasers
In this paper, we show that Inkjet Printing can be successfully applied to
external-cavity vertically-emitting thin-film organic lasers, and can be used
to generate a diffraction-limited output beam with an output energy as high as
33.6 uJ with a slope efficiency S of 34%. Laser emission shows to be
continuously tunable from 570 to 670 nm using an intracavity polymer-based
Fabry-Perot etalon. High-optical quality films with several um thicknesses are
realized thanks to ink-jet printing. We introduce a new optical material where
EMD6415 commercial ink constitutes the optical host matrix and exhibits a
refractive index of 1.5 and an absorption coefficient of 0.66 cm-1 at 550-680
nm. Standard laser dyes like Pyromethene 597 and Rhodamine 640 are incorporated
in solution to the EMD6415 ink. Such large size " printed pixels " of 50 mm 2
present uniform and flat surfaces, with roughness measured as low as 1.5 nm in
different locations of a 50um x 50um AFM scan. Finally, as the gain capsules
fabricated by Inkjet printing are simple and do not incorporate any tuning or
cavity element, they are simple to make, have a negligible fabrication cost and
can be used as fully disposable items. This works opens the way towards the
fabrication of really low-cost tunable visible lasers with an affordable
technology that has the potential to be widely disseminated
Deep trenches for thermal crosstalk reduction in InP-based photonic integrated circuits
We numerically and experimentally investigate an on-chip solution to reduce the thermal crosstalk in indium phosphide-based photonic integrated circuits. We introduce deep trenches, fabricated through wet etch, between active and passive components. The current injected in active components and the geometry of the trenches are the parameters considered in our analysis. The trenches thermally isolate the passive components from the heat generated by active components. The thermal crosstalk is quantified by measuring the effects on the electro-optical response of an MZ modulator considered as a test structure. The heat sources are represented by semiconductor optical amplifiers placed at different distances with respect to the position of the MZ. Our experiments show how both the geometry and the position of the trenches, play a role in the reduction of the thermal crosstalk
Fabrication and characterization of a wet-etched InP-based vertical coupling mirror
In this work we describe the fabrication and characterization of couplers realized with a wet etching process that is compatible with the standard COBRA active-passive process. The implementation of this broadband structure allows for wafer-scale waveguide-loss and absolute-wavelength measurements
Deep trenches for thermal crosstalk reduction in InP-based photonic integrated circuits
We numerically and experimentally investigate an on-chip solution to reduce the thermal crosstalk in indium phosphide-based photonic integrated circuits. We introduce deep trenches, fabricated through wet etch, between active and passive components. The current injected in active components and the geometry of the trenches are the parameters considered in our analysis. The trenches thermally isolate the passive components from the heat generated by active components. The thermal crosstalk is quantified by measuring the effects on the electro-optical response of an MZ modulator considered as a test structure. The heat sources are represented by semiconductor optical amplifiers placed at different distances with respect to the position of the MZ. Our experiments show how both the geometry and the position of the trenches, play a role in the reduction of the thermal crosstalk
Fabrication and characterization of a wet-etched In{-based vertical coupling mirror
In this work we describe the fabrication and characterization of couplers realized with a wet etching process that is compatible with the standard COBRA active-passive process. The implementation of this broadband structure allows for wafer-scale waveguide loss and absolute-wavelength measurements