Transcriptome analysis of secondary cell wall development in Medicago truncatula

This article describes a transcriptome microarray assay and high through-put quantitative real time PCR analysis of Medicago truncatula

Stroke genetics informs drug discovery and risk prediction across ancestries

Previous genome-wide association studies (GWASs) of stroke - the second leading cause of death worldwide - were conducted predominantly in populations of European ancestry(1,2). Here, in cross-ancestry GWAS meta-analyses of 110,182 patients who have had a stroke (five ancestries, 33% non-European) and 1,503,898 control individuals, we identify association signals for stroke and its subtypes at 89 (61 new) independent loci: 60 in primary inverse-variance-weighted analyses and 29 in secondary meta-regression and multitrait analyses. On the basis of internal cross-ancestry validation and an independent follow-up in 89,084 additional cases of stroke (30% non-European) and 1,013,843 control individuals, 87% of the primary stroke risk loci and 60% of the secondary stroke risk loci were replicated (P < 0.05). Effect sizes were highly correlated across ancestries. Cross-ancestry fine-mapping, in silico mutagenesis analysis(3), and transcriptome-wide and proteome-wide association analyses revealed putative causal genes (such as SH3PXD2A and FURIN) and variants (such as at GRK5 and NOS3). Using a three-pronged approach(4), we provide genetic evidence for putative drug effects, highlighting F11, KLKB1, PROC, GP1BA, LAMC2 and VCAM1 as possible targets, with drugs already under investigation for stroke for F11 and PROC. A polygenic score integrating cross-ancestry and ancestry-specific stroke GWASs with vascular-risk factor GWASs (integrative polygenic scores) strongly predicted ischaemic stroke in populations of European, East Asian and African ancestry(5). Stroke genetic risk scores were predictive of ischaemic stroke independent of clinical risk factors in 52,600 clinical-trial participants with cardiometabolic disease. Our results provide insights to inform biology, reveal potential drug targets and derive genetic risk prediction tools across ancestries.</p

Gate Stack Engineering for High Temperature Silicon Carbide CMOS ICs

The potential to thermally grow SiO2 on silicon carbide has resulted in it becoming the technology of choice to realise high temperature CMOS circuits. The challenge to achieve a high quality gate stack relies on engineering the metal-insulator-semiconductor interfaces to enable reliable high temperature functionality. Here we describe the effect of different process conditions for the formation of the dielectric layer on the characteristics of the resulting devices. The operating characteristics at elevated temperatures depend critically on the quality of the gate stack. Therefore a systematic evaluation of the intrinsic properties of the gate stack and data from reliability tests are needed